Chin. Phys. B ›› 2013, Vol. 22 ›› Issue (12): 128502-128502.doi: 10.1088/1674-1056/22/12/128502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Improvement in electroluminescence performance of n-ZnO/Ga2O3/p-GaN heterojunction light-emitting diodes

张立春, 赵风周, 王菲菲, 李清山   

  1. School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China
  • 收稿日期:2013-02-13 修回日期:2013-05-20 出版日期:2013-10-25 发布日期:2013-10-25
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 11144010) and the Research Award Fund for Outstanding Middle-aged Young Scientist of Shandong Province, China (Grant No. BS2011ZZ004).

Improvement in electroluminescence performance of n-ZnO/Ga2O3/p-GaN heterojunction light-emitting diodes

Zhang Li-Chun (张立春), Zhao Feng-Zhou (赵风周), Wang Fei-Fei (王菲菲), Li Qing-Shan (李清山)   

  1. School of Physics and Optoelectronic Engineering, Ludong University, Yantai 264025, China
  • Received:2013-02-13 Revised:2013-05-20 Online:2013-10-25 Published:2013-10-25
  • Contact: Li Qing-Shan E-mail:ldulsl@163.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 11144010) and the Research Award Fund for Outstanding Middle-aged Young Scientist of Shandong Province, China (Grant No. BS2011ZZ004).

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摘要： n-ZnO/p-GaN heterojunction light-emitting diodes with and without a Ga2O3 interlayer are fabricated. The electroluminescence (EL) spectrum of the n-ZnO/p-GaN displays a single blue emission at 430 nm originating from GaN, while the n-ZnO/Ga2O3/p-GaN exhibits a broad emission peak from ultraviolet to visible. The broadened EL spectra of n-ZnO/Ga2O3/p-GaN are probably ascribed to the radiative recombination in both the p-GaN and n-ZnO, due to the larger electron barrier (ΔEC=1.85 eV) at n-ZnO/Ga2O3 interface and the much smaller hole barrier (ΔEV=0.20 eV) at Ga2O3/p-GaN interface.

关键词: light-emitting diodes, heterojunction, ZnO

Abstract: n-ZnO/p-GaN heterojunction light-emitting diodes with and without a Ga2O3 interlayer are fabricated. The electroluminescence (EL) spectrum of the n-ZnO/p-GaN displays a single blue emission at 430 nm originating from GaN, while the n-ZnO/Ga2O3/p-GaN exhibits a broad emission peak from ultraviolet to visible. The broadened EL spectra of n-ZnO/Ga2O3/p-GaN are probably ascribed to the radiative recombination in both the p-GaN and n-ZnO, due to the larger electron barrier (ΔEC=1.85 eV) at n-ZnO/Ga2O3 interface and the much smaller hole barrier (ΔEV=0.20 eV) at Ga2O3/p-GaN interface.

Key words: light-emitting diodes, heterojunction, ZnO

中图分类号:  (Semiconductor devices)

  • 85.30.-z