中国物理B ›› 2012, Vol. 21 ›› Issue (6): 67803-067803.doi: 10.1088/1674-1056/21/6/067803

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization

周小伟a b, 许晟瑞a, 张进成a, 党纪源c, 吕玲a, 郝跃a, 郭立新b   

  1. a. Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
    b. School of Science, Xidian University, Xi'an 710071, China;
    c. Flight Automatic Control Research Institute, AVIC, Xi'an 710065, China
  • 收稿日期:2011-12-06 修回日期:2012-03-01 出版日期:2012-05-01 发布日期:2012-05-01
  • 基金资助:
    Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. K50511250002), the National Key Science and Technology Special Project, China (Grant No. 2008ZX01002-002), and the National Natural Science Foundation of China (Grant Nos. 60736033, 60976068, and 61076097).

Luminescence of a GaN grain with a nonpolar and semipolar plane in relation to microstructural characterization

Zhou Xiao-Wei(周小伟)a)b), Xu Sheng-Rui(许晟瑞)a)†, Zhang Jin-Cheng(张进成)a), Dang Ji-Yuan(党纪源) c), LŰ Ling(吕玲)a), Hao Yue(郝跃)a), and Guo Li-Xin(郭立新)b)   

  1. a. Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China;
    b. School of Science, Xidian University, Xi'an 710071, China;
    c. Flight Automatic Control Research Institute, AVIC, Xi'an 710065, China
  • Received:2011-12-06 Revised:2012-03-01 Online:2012-05-01 Published:2012-05-01
  • Contact: Xu Sheng-Rui E-mail:shengruixidian@126.com
  • Supported by:
    Project supported by the Fundamental Research Funds for the Central Universities, China (Grant No. K50511250002), the National Key Science and Technology Special Project, China (Grant No. 2008ZX01002-002), and the National Natural Science Foundation of China (Grant Nos. 60736033, 60976068, and 61076097).

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摘要： We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask. Transmission electron microscopy, scanning electron microscopy, and Raman spectroscopy are used to reveal the effect of SiN on the overgrown a-plane GaN growth. The SiN layer effectively terminates the propagation of the threading dislocation and basal plane stacking faults during a-plane GaN regrowth through the interlayer, resulting in the window region shrinking from a rectangle to a “black hole”. Furthermore, strong yellow luminescence (YL) in the nonpolar plane and very weak YL in the semipolar plane on the GaN grain is revealed by cathodoluminescence, suggesting that C-involved defects are responsible for the YL.

关键词: nonpolar, semipolar, GaN, yellow luminescence

Abstract: We report on the growth of the high-quality GaN grain on a r-plane sapphire substrate by using a self-organized SiN interlayer as a selective growth mask. Transmission electron microscopy, scanning electron microscopy, and Raman spectroscopy are used to reveal the effect of SiN on the overgrown a-plane GaN growth. The SiN layer effectively terminates the propagation of the threading dislocation and basal plane stacking faults during a-plane GaN regrowth through the interlayer, resulting in the window region shrinking from a rectangle to a “black hole”. Furthermore, strong yellow luminescence (YL) in the nonpolar plane and very weak YL in the semipolar plane on the GaN grain is revealed by cathodoluminescence, suggesting that C-involved defects are responsible for the YL.

Key words: nonpolar, semipolar, GaN, yellow luminescence

中图分类号:  (III-V semiconductors)

  • 78.55.Cr
81.15.Kk (Vapor phase epitaxy; growth from vapor phase)