[1] |
Ohno H, Munekata H, Penney T, Vonmolnar S and Chang L L 1992 Phys. Rev. Lett. 68 2664
|
[2] |
Su P, Gong M, Ma Y, Gao B, Shi R Y, Chen C, Shi T F, Cao X C, Meng X H and Luo D S 2011 Acta Phys. Sin. 60 027105 (in Chinese)
|
[3] |
Salmani E, Benyoussef A, Ez-Zahraouy H and Saidi E H 2011 Chin. Phys. B 20 086601
|
[4] |
Xiao Z L and Shi L B 2011 Acta Phys. Sin. 60 027502 (in Chinese)
|
[5] |
Chen S J, Suzuki K and Garitaonandia J S 2009 Appl. Phys. Lett. 95 172507
|
[6] |
Garcia M A, Ruiz-Gonzalez M L, Quesada A, Costa-Kramer J L, Fernandez J F, Khatib S J, Wennberg A, Caballero A C, Martin-Gonzalez M S, Villegas M, Briones F, Gonzalez-Calbet J M and Hernando A 2005 Phys. Rev. Lett. 94 217206
|
[7] |
Dietl T, Ohno H, Matsukura F, Cibert J and Ferrand D 2000 Science 287 1019
|
[8] |
Coey J M D, Venkatesan M and Fitzgerald C B 2005 Nat. Mater. 4 173
|
[9] |
Los A V 2007 Phys. Rev. B 76 165204
|
[10] |
Zhou J, Li H M, Zhang L J, Cheng J, Zhao H F, Chu W S, Yang J L, Luo Y and Wu Z Y 2011 J. Phys. Chem. C 115 253
|
[11] |
Jin C G, Wu X M, Zhuge L J, Sha Z D and Hong B 2008 J. Phys. D: Appl. Phys. 41 035055
|
[12] |
Tang J, Liu Z L, Ren P, Yao T, Yan W S, Xu P S and Wei S Q 2010 Acta Phys. Sin. 59 4774 (in Chinese)
|
[13] |
Song B, Chen X L, Han J C, Jian J K, Bao H Q, Li H, Zhu K X, Wang W Y, Wang G, Zuo H B, Zhang X H and Meng S H 2010 J. Phys. D: Appl. Phys. 43 415002
|
[14] |
Song B, Chen X L, Han J C, Jian J K, Li H, Bao H Q, Zhu K X, Zuo H B, Zhang X H, Wang W Y and Meng S H 2010 Solid State Commun. 150 1840
|
[15] |
Liu S H, Hsu H S, Venkataiah G, Qi X, Lin C R, Lee J F, Liang K S and Huang J C A 2010 Appl. Phys. Lett. 96 262504
|
[16] |
Lin S H, Chen Z M, Liang P, Jiang D and Xie H J 2010 Chem. Phys. Lett. 496 56
|
[17] |
Nakashima S and Harima H 1997 Phys. Status Solidi A 162 39
|
[18] |
Janzen E, Ivanov I G, Son N T, Magnusson B, Zolnai Z, Henry A, Bergman J P, Storasta L and Carlsson F 2003 Physica B 340 15
|
[19] |
Chen B Y, Shi E W, Chen Z Z, Li X B and Xiao B 2008 Jpn. J. Appl. Phys. 47 4491
|
[20] |
Kim K J, Lee H, Choi J H, Lee H K, Kang T H, Kim B and Kim S 2008 J. Phys.: Condens. Matter 20 225017
|
[21] |
Chang Y K, Hsieh H H, Pong W F, Tsai M H, Dann T E, Chien F Z, Tseng P K, Chen L C, Wei S L, Chen K H, Wu J J and Chen Y F 1999 J. Appl. Phys. 86 5609
|
[22] |
Johansson L I, Owman F, Martensson P, Persson C and Lindefelt U 1996 Phys. Rev. B 53 13803
|
[23] |
Ray S C, Bao C W, Tsai H M, Chiou J W, Jan J C, Kumar K P K, Pong W F, Tsai M H, Wang W J, Hsu C J, Okpalugo T I T, Papakonstantinou P and McLaughlin J A 2004 Appl. Phys. Lett. 85 4022
|
[24] |
Maier K, Muller H D and Schneider J 1992 Proceedings of the 16th International Conference on Defects in Semiconductors, Parts 1-3 83 1183
|
[25] |
Bickermann M, Weingartner R and Winnacker A 2003 J. Cryst. Growth 254 390
|
[26] |
Liu Y, Wang G, Wang S C, Yang J H, Chen L A, Qin X B, Song B, Wang B Y and Chen X L 2011 Phys. Rev. Lett. 106 087205
|
[27] |
Li L, Prucnal S, Yao S D, Potzger K, Anwand W, Wagner A and Zhou S 2011 Appl. Phys. Lett. 98 222508
|