Defects mediated ferromagnetism in a V-doped 6H–SiC single crystal

doi:10.1088/1674-1056/21/6/067503

中国物理B ›› 2012, Vol. 21 ›› Issue (6): 67503-067503.doi: 10.1088/1674-1056/21/6/067503

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Defects mediated ferromagnetism in a V-doped 6H–SiC single crystal

卓世异^{a b}, 刘学超^a, 熊泽^{a b}, 闫文盛^c, 忻隽^a, 杨建华^a, 施尔畏^a

a. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;
b. Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;
c. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China

收稿日期:2011-11-16 修回日期:2011-12-01 出版日期:2012-05-01 发布日期:2012-05-01
基金资助:
Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51002176) and the Innovation Programs of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W10).

Defects mediated ferromagnetism in a V-doped 6H–SiC single crystal

Zhuo Shi-Yi(卓世异)^a)b), Liu Xue-Chao(刘学超)^a)^†, Xiong Ze(熊泽)^a)b), Yan Wen-Sheng(闫文盛)^c), Xin Jun(忻隽)^a), Yang Jian-Hua(杨建华)^a), and Shi Er-Wei(施尔畏)^a)

a. Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;
b. Graduate University of the Chinese Academy of Sciences, Beijing 100049, China;
c. National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China

Received:2011-11-16 Revised:2011-12-01 Online:2012-05-01 Published:2012-05-01
Contact: Liu Xue-Chao E-mail:xcliu@mail.sic.ac.cn
Supported by:
Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No. 51002176) and the Innovation Programs of the Chinese Academy of Sciences (Grant No. KJCX2-EW-W10).

摘要/Abstract

摘要： Undoped and V-doped 6H-SiC single crystals have been grown by the physical vapor transport method. The V concentration is determined to be 3.76 ? 10¹⁷ at/cm³ and 6.14 ? 10¹⁷ at/cm³ by secondary ion mass spectrometry for low V-doped and high V-doped SiC samples, respectively. The undoped 6H-SiC shows diamagnetism, while the V-doped 6H-SiC exhibits weak ferromagnetism. The lower V-doped sample shows stronger ferromagnetism compared to that of the higher V-doped sample. However, the structural characterization indicates that the lower V-doped SiC has a relative poor crystalline quality. It is found that both V dopants and defects are essential for introducing ferromagnetic exchange in V-doped SiC single crystals.

关键词: V-doping, 6H-SiC, defects, magnetic materials

Abstract: Undoped and V-doped 6H-SiC single crystals have been grown by the physical vapor transport method. The V concentration is determined to be 3.76 × 10¹⁷ at/cm³ and 6.14 × 10¹⁷ at/cm³ by secondary ion mass spectrometry for low V-doped and high V-doped SiC samples, respectively. The undoped 6H-SiC shows diamagnetism, while the V-doped 6H-SiC exhibits weak ferromagnetism. The lower V-doped sample shows stronger ferromagnetism compared to that of the higher V-doped sample. However, the structural characterization indicates that the lower V-doped SiC has a relative poor crystalline quality. It is found that both V dopants and defects are essential for introducing ferromagnetic exchange in V-doped SiC single crystals.

Key words: V-doping, 6H-SiC, defects, magnetic materials

中图分类号: (Magnetic semiconductors)

75.50.Pp

75.30.-m (Intrinsic properties of magnetically ordered materials) 71.70.Gm (Exchange interactions)

卓世异, 刘学超, 熊泽, 闫文盛, 忻隽, 杨建华, 施尔畏. Defects mediated ferromagnetism in a V-doped 6H–SiC single crystal[J]. 中国物理B, 2012, 21(6): 67503-067503.

Zhuo Shi-Yi(卓世异), Liu Xue-Chao(刘学超), Xiong Ze(熊泽), Yan Wen-Sheng(闫文盛), Xin Jun(忻隽), Yang Jian-Hua(杨建华), and Shi Er-Wei(施尔畏) . Defects mediated ferromagnetism in a V-doped 6H–SiC single crystal[J]. Chin. Phys. B, 2012, 21(6): 67503-067503.

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Defects mediated ferromagnetism in a V-doped 6H–SiC single crystal

Defects mediated ferromagnetism in a V-doped 6H–SiC single crystal

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