中国物理B ›› 2012, Vol. 21 ›› Issue (12): 126804-126804.doi: 10.1088/1674-1056/21/12/126804

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇    下一篇

Influence of double AlN buffer layers on the qualities of GaN films prepared by metal–organic chemical vapour deposition

林志宇, 张进成, 周昊, 李小刚, 孟凡娜, 张琳霞, 艾姗, 许晟瑞, 赵一, 郝跃   

  1. Key Laboratory of Wide Band-Gap Semiconductor Technology, School ofMicroelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2012-04-25 修回日期:2012-05-27 出版日期:2012-11-01 发布日期:2012-11-01
  • 基金资助:
    Project supported by the National Key Science & Technology Special Project, China (Grant No. 2008ZX01002-002), the Fundamental Research Funds for the Central Universities, China (Grant No. JY10000904009), and the Major Program and State Key Program of the National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033).

Influence of double AlN buffer layers on the qualities of GaN films prepared by metal–organic chemical vapour deposition

Lin Zhi-Yu (林志宇), Zhang Jin-Cheng (张进成), Zhou Hao (周昊), Li Xiao-Gang (李小刚), Meng Fan-Na (孟凡娜), Zhang Lin-Xia (张琳霞), Ai Shan (艾姗), Xu Sheng-Rui (许晟瑞), Zhao Yi (赵一), Hao Yue (郝跃)   

  1. Key Laboratory of Wide Band-Gap Semiconductor Technology, School ofMicroelectronics, Xidian University, Xi'an 710071, China
  • Received:2012-04-25 Revised:2012-05-27 Online:2012-11-01 Published:2012-11-01
  • Contact: Zhang Jin-Cheng E-mail:jchzhang@xidian.edu.cn
  • Supported by:
    Project supported by the National Key Science & Technology Special Project, China (Grant No. 2008ZX01002-002), the Fundamental Research Funds for the Central Universities, China (Grant No. JY10000904009), and the Major Program and State Key Program of the National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033).

PDF (PC)

1109

赞

摘要： In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire (0001) substrate with double AlN buffer layers. The buffer layer consists of a low-temperature (LT) AlN layer and a high-temperature (HT) AlN layer that are grown at 600℃ and 1000℃, respectively. It is observed that the thickness of LT-AlN layer influences the quality of GaN thin film extremely, and that the optimized 4.25-min-LT-AlN layer minimizes the dislocation density of GaN thin film. The reason for the improved properties is discussed in this paper.

关键词: GaN, AlN buffer layer, metal-organic chemical vapour deposition, threading dislocations

Abstract: In this paper we report that the GaN thin film is grown by metal-organic chemical vapour deposition on a sapphire (0001) substrate with double AlN buffer layers. The buffer layer consists of a low-temperature (LT) AlN layer and a high-temperature (HT) AlN layer that are grown at 600℃ and 1000℃, respectively. It is observed that the thickness of LT-AlN layer influences the quality of GaN thin film extremely, and that the optimized 4.25-min-LT-AlN layer minimizes the dislocation density of GaN thin film. The reason for the improved properties is discussed in this paper.

Key words: GaN, AlN buffer layer, metal-organic chemical vapour deposition, threading dislocations

中图分类号:  (Nucleation and growth)

  • 68.55.A-
81.15.Kk (Vapor phase epitaxy; growth from vapor phase)