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Maurice Franck Kenmogne Ndjoko, Bi-Dan Guo(郭必诞), Yin-Hui Peng(彭银辉), and Yu-Jun Zhao(赵宇军). Strain engineering and hydrogen effect for two-dimensional ferroelectricity in monolayer group-IV monochalcogenides MX (M =Sn, Ge; X=Se, Te, S)[J]. 中国物理B, 2023, 32(3): 36802-036802. |
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Li-Man Xiao(肖丽蔓), Huan-Cheng Yang(杨焕成), and Zhong-Yi Lu(卢仲毅). Li2NiSe2: A new-type intrinsic two-dimensional ferromagnetic semiconductor above 200 K[J]. 中国物理B, 2023, 32(3): 37501-037501. |
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Sharon V S, Veena Gopalan E, and Malini K A. Structural evolution-enabled BiFeO3 modulated by strontium doping with enhanced dielectric, optical and superparamagneticproperties by a modified sol-gel method[J]. 中国物理B, 2023, 32(3): 37504-037504. |
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Dan Liu(刘聃), Ran Wei(魏冉), Lin Han(韩琳), Chen Zhu(朱琛), and Shuai Dong(董帅). Ferroelectricity induced by the absorption of water molecules on double helix SnIP[J]. 中国物理B, 2023, 32(3): 37701-037701. |
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Jia Chen(陈佳), Peiyue Yu(于沛玥), Lei Zhao(赵磊), Yanru Li(李彦如), Meiyin Yang(杨美音), Jing Xu(许静), Jianfeng Gao(高建峰), Weibing Liu(刘卫兵), Junfeng Li(李俊峰), Wenwu Wang(王文武), Jin Kang(康劲), Weihai Bu(卜伟海), Kai Zheng(郑凯), Bingjun Yang(杨秉君), Lei Yue(岳磊), Chao Zuo(左超), Yan Cui(崔岩), and Jun Luo(罗军). Charge-mediated voltage modulation of magnetism in Hf0.5Zr0.5O2/Co multiferroic heterojunction[J]. 中国物理B, 2023, 32(2): 27504-027504. |
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Wenyu Huang(黄文宇), Cangmin Wang(王藏敏), Yichao Liu(刘艺超), Shaoting Wang(王绍庭), Weifeng Ge(葛威锋), Huaili Qiu(仇怀利), Yuanjun Yang(杨远俊), Ting Zhang(张霆), Hui Zhang(张汇), and Chen Gao(高琛). Strain-mediated magnetoelectric control of tunneling magnetoresistance in magnetic tunneling junction/ferroelectric hybrid structures[J]. 中国物理B, 2022, 31(9): 97502-097502. |
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Qiong Wu(吴琼), Lei Zhao(赵雷), Xinghao Chen(陈兴豪), and Shifeng Zhao(赵世峰)†. Efficiently enhanced energy storage performance of Ba2Bi4Ti5O18 film by co-doping Fe3+ and Ta5+ ion with larger radius[J]. 中国物理B, 2022, 31(9): 97701-097701. |
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Yue Li(李跃), Xingpeng Liu(刘兴鹏), Tangyou Sun(孙堂友), Fabi Zhang(张法碧), Tao Fu(傅涛), Peihua Wang-yang(王阳培华), Haiou Li(李海鸥)†, and Yonghe Chen(陈永和)‡. Impact of AlxGa1-xN barrier thickness and Al composition on electrical properties of ferroelectric HfZrO/Al2O3/AlGaN/GaN MFSHEMTs[J]. 中国物理B, 2022, 31(9): 97307-097307. |
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Ke Xu(徐可), Junsheng Feng(冯俊生), and Hongjun Xiang(向红军). Computational studies on magnetism and ferroelectricity[J]. 中国物理B, 2022, 31(9): 97505-097505. |
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Wenqiang Wang(王文强), Gengkuan Zhu(朱耿宽), Kaiyuan Zhou(周恺元), Xiang Zhan(战翔), Zui Tao(陶醉), Qingwei Fu(付清为), Like Liang(梁力克), Zishuang Li(李子爽), Lina Chen(陈丽娜), Chunjie Yan(晏春杰), Haotian Li(李浩天), Tiejun Zhou(周铁军), and Ronghua Liu(刘荣华). Enhancement of spin-orbit torque efficiency by tailoring interfacial spin-orbit coupling in Pt-based magnetic multilayers[J]. 中国物理B, 2022, 31(9): 97504-097504. |
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Yilin Li(李屹林), Hui Zhu(朱慧), Rui Li(李锐), Jie Liu(柳杰), Jinjuan Xiang(项金娟), Na Xie(解娜), Zeng Huang(黄增), Zhixuan Fang(方志轩), Xing Liu(刘行), and Lixing Zhou(周丽星). Wake-up effect in Hf0.4Zr0.6O2 ferroelectric thin-film capacitors under a cycling electric field[J]. 中国物理B, 2022, 31(8): 88502-088502. |
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Jun Ren(任军), Junming Li(李军明), Sheng Zhang(张胜), Jun Li(李骏), Wenxia Su(苏文霞), Dunhui Wang(王敦辉), Qingqi Cao(曹庆琪), and Youwei Du(都有为). Voltage control magnetism and ferromagnetic resonance in an Fe19Ni81/PMN-PT heterostructure by strain[J]. 中国物理B, 2022, 31(7): 77502-077502. |
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Xiao-Fang Ouyang(欧阳小芳) and Lu Wang(王路). Half-metallicity induced by out-of-plane electric field on phosphorene nanoribbons[J]. 中国物理B, 2022, 31(7): 77304-077304. |
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Yan Zhang(张艳), You-Guo Shi(石友国), Li-Chen Wang(王利晨), Xin-Qi Zheng(郑新奇), Jun Liu(刘俊), Ya-Xu Jin(金亚旭), Ke-Wei Zhang(张克维), Hong-Xia Liu(刘虹霞), Shuo-Tong Zong(宗朔通), Zhi-Gang Sun(孙志刚), Ji-Fan Hu(胡季帆), Tong-Yun Tong(赵同云), and Bao-Gen Shen(沈保根). Large inverse and normal magnetocaloric effects in HoBi compound with nonhysteretic first-order phase transition[J]. 中国物理B, 2022, 31(7): 77501-077501. |
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Qi Qin(秦琦), Miaocheng Zhang(张缪城), Suhao Yao(姚苏昊), Xingyu Chen(陈星宇), Aoze Han(韩翱泽),Ziyang Chen(陈子洋), Chenxi Ma(马晨曦), Min Wang(王敏), Xintong Chen(陈昕彤), Yu Wang(王宇),Qiangqiang Zhang(张强强), Xiaoyan Liu(刘晓燕), Ertao Hu(胡二涛), Lei Wang(王磊), and Yi Tong(童祎). Fabrication and investigation of ferroelectric memristors with various synaptic plasticities[J]. 中国物理B, 2022, 31(7): 78502-078502. |