中国物理B ›› 2011, Vol. 20 ›› Issue (7): 77804-077804.doi: 10.1088/1674-1056/20/7/077804
朱继红, 王良吉, 张书明, 王辉, 赵德刚, 朱建军, 刘宗顺, 江德生, 杨辉
Zhu Ji-Hong(朱继红)a), Wang Liang-Ji(王良吉) a), Zhang Shu-Ming(张书明)a)† , Wang Hui(王辉)a), Zhao De-Gang(赵德刚)a), Zhu Jian-Jun(朱建军)a), Liu Zong-Shun(刘宗顺)a), Jiang De-Sheng(江德生) a), and Yang Hui(杨辉)a)b)
摘要: The light extraction efficiencies have been calculated for various InGaN/GaN multiple quantum well nanostructure light-emitting diodes including nanopillar, nanorough of P-GaN surface, coreshell and nano-interlayer structure. From the calculated results we can see that the light extraction efficiency is remarkably improved in the nanostructures, especially those with an InGaN or AlGaN nano-interlayer. With a 420-nm luminescence wavelength, the light extraction efficiency can reach as high as 65% for the InGaN or AlGaN nano-interlayer structure with appropriate In or Al content while only 26% for the planar structure.
中图分类号: (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)