Novel photoluminescence properties of InAlO3(ZnO)m superlattice nanowires

doi:10.1088/1674-1056/20/7/078101

中国物理B ›› 2011, Vol. 20 ›› Issue (7): 78101-078101.doi: 10.1088/1674-1056/20/7/078101

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Novel photoluminescence properties of InAlO₃(ZnO)_m superlattice nanowires

刘欣, 黄东亮, 武立立, 张喜田, 张伟光

Heilongjiang Province Key Laboratory for Low-Dimensional System and Mesoscopic Physics and School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China

收稿日期:2011-01-19 修回日期:2011-02-16 出版日期:2011-07-15 发布日期:2011-07-15

Novel photoluminescence properties of InAlO₃(ZnO)_m superlattice nanowires

Liu Xin(刘欣), Huang Dong-Liang(黄东亮), Wu Li-Li(武立立), Zhang Xi-Tian(张喜田)^†, and Zhang Wei-Guang(张伟光)^‡

Heilongjiang Province Key Laboratory for Low-Dimensional System and Mesoscopic Physics and School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China

Received:2011-01-19 Revised:2011-02-16 Online:2011-07-15 Published:2011-07-15

摘要/Abstract

摘要： One-dimension InAlO₃(ZnO)_m superlattice nanowires were successfully synthesized via chemical vapor deposition. Transmission electron microscopy measurements reveal that the nanowires have a periodic layered structure along the 〈0001〉 direction. The photoluminescence properties of InAlO₃(ZnO)_m superlattice nanowires are studied for the first time. The near-band-edge emissions exhibit an obvious red shift due to the formation of the localized tail states. The two peaks centered at 3.348 eV and 3.299 eV indicate a lever phenomenon at the low-temperature region. A new luminescence mechanism is proposed, combined with the special energy band structure of InAlO₃(ZnO)_m.

Abstract: One-dimension InAlO₃(ZnO)_m superlattice nanowires were successfully synthesized via chemical vapor deposition. Transmission electron microscopy measurements reveal that the nanowires have a periodic layered structure along the 〈0001〉 direction. The photoluminescence properties of InAlO₃(ZnO)_m superlattice nanowires are studied for the first time. The near-band-edge emissions exhibit an obvious red shift due to the formation of the localized tail states. The two peaks centered at 3.348 eV and 3.299 eV indicate a lever phenomenon at the low-temperature region. A new luminescence mechanism is proposed, combined with the special energy band structure of InAlO₃(ZnO)_m.

Key words: InAlO₃(ZnO)_m, superlattice nanowires, photoluminescence, energy band structure

中图分类号: (Quantum wires)

81.07.Vb

81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 78.67.Pt (Multilayers; superlattices; photonic structures; metamaterials)

刘欣, 黄东亮, 武立立, 张喜田, 张伟光. Novel photoluminescence properties of InAlO₃(ZnO)_m superlattice nanowires[J]. 中国物理B, 2011, 20(7): 78101-078101.

Liu Xin(刘欣), Huang Dong-Liang(黄东亮), Wu Li-Li(武立立), Zhang Xi-Tian(张喜田), and Zhang Wei-Guang(张伟光) . Novel photoluminescence properties of InAlO₃(ZnO)_m superlattice nanowires[J]. Chin. Phys. B, 2011, 20(7): 78101-078101.

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Novel photoluminescence properties of InAlO₃(ZnO)_m superlattice nanowires

Novel photoluminescence properties of InAlO₃(ZnO)_m superlattice nanowires

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