Simulation of the light extraction efficiency of nanostructure light-emitting diodes

doi:10.1088/1674-1056/20/7/077804

中国物理B ›› 2011, Vol. 20 ›› Issue (7): 77804-077804.doi: 10.1088/1674-1056/20/7/077804

Simulation of the light extraction efficiency of nanostructure light-emitting diodes

朱继红, 王良吉, 张书明, 王辉, 赵德刚, 朱建军, 刘宗顺, 江德生, 杨辉

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2010-11-12 修回日期:2011-03-12 出版日期:2011-07-15 发布日期:2011-07-15

Simulation of the light extraction efficiency of nanostructure light-emitting diodes

Zhu Ji-Hong(朱继红)^a), Wang Liang-Ji(王良吉)^a), Zhang Shu-Ming(张书明)^a)†, Wang Hui(王辉)^a), Zhao De-Gang(赵德刚)^a), Zhu Jian-Jun(朱建军)^a), Liu Zong-Shun(刘宗顺)^a), Jiang De-Sheng(江德生)^a), and Yang Hui(杨辉)^a)b)

^aState Key Laboratory on Integrated Optoelectronics, Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China; ^b Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China

Received:2010-11-12 Revised:2011-03-12 Online:2011-07-15 Published:2011-07-15

摘要/Abstract

摘要： The light extraction efficiencies have been calculated for various InGaN/GaN multiple quantum well nanostructure light-emitting diodes including nanopillar, nanorough of P-GaN surface, coreshell and nano-interlayer structure. From the calculated results we can see that the light extraction efficiency is remarkably improved in the nanostructures, especially those with an InGaN or AlGaN nano-interlayer. With a 420-nm luminescence wavelength, the light extraction efficiency can reach as high as 65% for the InGaN or AlGaN nano-interlayer structure with appropriate In or Al content while only 26% for the planar structure.

关键词: light extraction efficiency, InGaN/GaN multiple quantum well, nanostructure

Abstract: The light extraction efficiencies have been calculated for various InGaN/GaN multiple quantum well nanostructure light-emitting diodes including nanopillar, nanorough of P-GaN surface, coreshell and nano-interlayer structure. From the calculated results we can see that the light extraction efficiency is remarkably improved in the nanostructures, especially those with an InGaN or AlGaN nano-interlayer. With a 420-nm luminescence wavelength, the light extraction efficiency can reach as high as 65% for the InGaN or AlGaN nano-interlayer structure with appropriate In or Al content while only 26% for the planar structure.

Key words: light extraction efficiency, InGaN/GaN multiple quantum well, nanostructure

中图分类号: (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)

78.67.-n

78.67.De (Quantum wells) 78.67.Qa (Nanorods) 78.20.Bh (Theory, models, and numerical simulation)

朱继红, 王良吉, 张书明, 王辉, 赵德刚, 朱建军, 刘宗顺, 江德生, 杨辉. Simulation of the light extraction efficiency of nanostructure light-emitting diodes[J]. 中国物理B, 2011, 20(7): 77804-077804.

Zhu Ji-Hong(朱继红), Wang Liang-Ji(王良吉), Zhang Shu-Ming(张书明), Wang Hui(王辉), Zhao De-Gang(赵德刚), Zhu Jian-Jun(朱建军), Liu Zong-Shun(刘宗顺), Jiang De-Sheng(江德生), and Yang Hui(杨辉). Simulation of the light extraction efficiency of nanostructure light-emitting diodes[J]. Chin. Phys. B, 2011, 20(7): 77804-077804.

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Simulation of the light extraction efficiency of nanostructure light-emitting diodes

Simulation of the light extraction efficiency of nanostructure light-emitting diodes

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