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Yuan Liu(刘源), Zhongran Liu(刘中然), Meng Zhang(张蒙), Yanqiu Sun(孙艳秋), He Tian(田鹤), and Yanwu Xie(谢燕武). Superconductivity in epitaxially grown LaVO3/KTaO3(111) heterostructures[J]. 中国物理B, 2023, 32(3): 37305-037305. |
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Ruirui Niu(牛锐锐), Xiangyan Han(韩香岩), Zhuangzhuang Qu(曲壮壮), Zhiyu Wang(王知雨), Zhuoxian Li(李卓贤), Qianling Liu(刘倩伶), Chunrui Han(韩春蕊), and Jianming Lu(路建明). Correlated states in alternating twisted bilayer-monolayer-monolayer graphene heterostructure[J]. 中国物理B, 2023, 32(1): 17202-017202. |
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Xiao-Juan Lian(连晓娟), Jin-Ke Fu(付金科), Zhi-Xuan Gao(高志瑄),Shi-Pu Gu(顾世浦), and Lei Wang(王磊). High-performance artificial neurons based on Ag/MXene/GST/Pt threshold switching memristors[J]. 中国物理B, 2023, 32(1): 17304-017304. |
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Yan Liu(刘妍), Ping Wang(王平), Ting Yang(杨婷), Qian Wu(吴茜), Yintang Yang(杨银堂), and Zhiyong Zhang(张志勇). Steady-state and transient electronic transport properties of β-(AlxGa1-x)2O3/Ga2O3 heterostructures: An ensemble Monte Carlo simulation[J]. 中国物理B, 2022, 31(11): 117305-117305. |
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Liang-Zhong Lin(林亮中), Yi-Yun Ling(凌艺纭), Dong Zhang(张东), and Zhen-Hua Wu(吴振华). Electron tunneling through double-electric barriers on HgTe/CdTe heterostructure interface[J]. 中国物理B, 2022, 31(11): 117201-117201. |
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Ming-Lang Wang(王明郎), Bo-Han Zhang(张博涵), Wen-Fei Zhang(张雯斐), Xin-Yue Tian(田馨月), Guang-Ping Zhang(张广平), and Chuan-Kui Wang(王传奎). Effect of crystallographic orientations on transport properties of methylthiol-terminated permethyloligosilane molecular junction[J]. 中国物理B, 2022, 31(7): 77303-077303. |
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Li-Jia Chen(陈丽佳), Guo-Xi Niu(牛国玺), Lian-Bin Niu(牛连斌), and Qun-Liang Song(宋群梁). Effect of net carriers at the interconnection layer in tandem organic solar cells[J]. 中国物理B, 2022, 31(3): 38802-038802. |
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Gang Li(李刚), Yuqian Huang(黄玉茜), Rongfeng Tang(唐荣风), Bo Che(车波), Peng Xiao(肖鹏), Weitao Lian(连伟涛), Changfei Zhu(朱长飞), and Tao Chen(陈涛). An n—n type heterojunction enabling highly efficientcarrier separation in inorganic solar cells[J]. 中国物理B, 2022, 31(3): 38803-038803. |
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Hai-Qing Xie(谢海情), Dan Wu(伍丹), Xiao-Qing Deng(邓小清), Zhi-Qiang Fan(范志强), Wu-Xing Zhou(周五星), Chang-Qing Xiang(向长青), and Yue-Yang Liu(刘岳阳). Simulations of monolayer SiC transistors with metallic 1T-phase MoS2 contact for high performance application[J]. 中国物理B, 2021, 30(11): 117102-117102. |
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Fei Qi(齐飞), Bo Wu(吴波), Junyuan Xu(徐俊源), Qian Chen(陈潜), Haiquan Shan(单海权), Jiaju Xu(许家驹), and Zong-Xiang Xu(许宗祥). Non-peripherally octaalkyl-substituted nickel phthalocyanines used as non-dopant hole transport materials in perovskite solar cells[J]. 中国物理B, 2021, 30(10): 108801-108801. |
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Minghui Qu(曲明慧), Jiayi He(贺家怡), Kexin Liu(刘可心), Liemao Cao(曹烈茂), Yipeng Zhao(赵宜鹏), Jing Zeng(曾晶), and Guanghui Zhou(周光辉). Device design based on the covalent homocouplingof porphine molecules[J]. 中国物理B, 2021, 30(9): 98504-098504. |
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Wen-Xiao Shi(时文潇), Hui Zhang(张慧), Shao-Jin Qi(齐少锦), Jin-E Zhang(张金娥), Hai-Lin Huang(黄海林), Bao-Gen Shen(沈保根), Yuan-Sha Chen(陈沅沙), and Ji-Rong Sun(孙继荣). Thermodynamic criterion for searching high mobility two-dimensional electron gas at KTaO3 interface[J]. 中国物理B, 2021, 30(7): 77302-077302. |
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Yanchong Zhao(赵岩翀), Tao Bo(薄涛), Luojun Du(杜罗军), Jinpeng Tian(田金朋), Xiaomei Li(李晓梅), Kenji Watanabe, Takashi Taniguchi, Rong Yang(杨蓉), Dongxia Shi(时东霞), Sheng Meng(孟胜), Wei Yang(杨威), and Guangyu Zhang(张广宇). Thermally induced band hybridization in bilayer-bilayer MoS2/WS2 heterostructure[J]. 中国物理B, 2021, 30(5): 57801-057801. |
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