中国物理B ›› 2011, Vol. 20 ›› Issue (12): 127101-127101.doi: 10.1088/1674-1056/20/12/127101
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
Valence band structure and density of states effective mass model of biaxial tensile strained silicon based on k·p theory
匡潜玮, 刘红侠, 王树龙, 秦珊珊, 王志林
- School of Microelectronics, Key Laboratory of Ministry of Education of Wide Band-Gap Semiconductor Technology, Xidian University, Xi'an 710071, China
Valence band structure and density of states effective mass model of biaxial tensile strained silicon based on k·p theory
Kuang Qian-Wei(匡潜玮)†, Liu Hong-Xia(刘红侠), Wang Shu-Long(王树龙), Qin Shan-Shan(秦珊珊), and Wang Zhi-Lin(王志林)
- School of Microelectronics, Key Laboratory of Ministry of Education of Wide Band-Gap Semiconductor Technology, Xidian University, Xi'an 710071, China
摘要： After constructing a stress and strain model, the valence bands of in-plane biaxial tensile strained Si is calculated by k·p method. In the paper we calculate the accurate anisotropy valance bands and the splitting energy between light and heavy hole bands. The results show that the valance bands are highly distorted, and the anisotropy is more obvious. To obtain the density of states (DOS) effective mass, which is a very important parameter for device modeling, a DOS effective mass model of biaxial tensile strained Si is constructed based on the valance band calculation. This model can be directly used in the device model of metal-oxide semiconductor field effect transistor (MOSFET). It also a provides valuable reference for biaxial tensile strained silicon MOSFET design.
中图分类号: (Rare earth metals and alloys)
- 71.20.Eh