Structural and electrical properties of single crystalline and bi-crystalline ZnO thin films grown by molecular beam epitaxy

doi:10.1088/1674-1056/19/7/076101

中国物理B ›› 2010, Vol. 19 ›› Issue (7): 76101-076101.doi: 10.1088/1674-1056/19/7/076101

Structural and electrical properties of single crystalline and bi-crystalline ZnO thin films grown by molecular beam epitaxy

徐明祥¹, 邹文琴², 张凤鸣², 路忠林³

(1)Department of Physics, Southeast University, Nanjing 210096, China; (2)National Laboratory of Solid State Microstructure, and Department of Physics, Nanjing University, Nanjing 210093, China; (3)National Laboratory of Solid State Microstructure, and Department of Physics, Nanjing University, Nanjing 210093, China;Physics Department and Institute of Innovations and Advanced Studies (IIAS), National Cheng Kung University, Tainan 701, China;Departme

收稿日期:2009-09-08 出版日期:2010-07-15 发布日期:2010-07-15
基金资助:
Project partially supported by the National Natural Science Foundation of China (Grant No. 10804017), the Natural Science Foundation of Jiangsu Province of China (Grant No. BK2007118), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20070286037), the Cyanine-Project Foundation of Jiangsu Province of China (Grant No. 1107020060), the Foundation for Climax Talents Plan in Six-Big Fields of Jiangsu Province of China (Grant No. 1107020070), and the New Century Excellent Talents in University (Grant No. NCET-05-0452).

Structural and electrical properties of single crystalline and bi-crystalline ZnO thin films grown by molecular beam epitaxy

Lu Zhong-Lin(路忠林)^a)b)c)†, Zou Wen-Qin(邹文琴)^a), Xu Ming-Xiang(徐明祥)^c), and Zhang Feng-Ming(张凤鸣)^a)

^a National Laboratory of Solid State Microstructure, and Department of Physics, Nanjing University, Nanjing 210093, China; ^b Physics Department and Institute of Innovations and Advanced Studies (IIAS), National Cheng Kung University, Tainan 701, China; ^c Department of Physics, Southeast University, Nanjing 210096, China

Received:2009-09-08 Online:2010-07-15 Published:2010-07-15
Supported by:
Project partially supported by the National Natural Science Foundation of China (Grant No. 10804017), the Natural Science Foundation of Jiangsu Province of China (Grant No. BK2007118), the Research Fund for the Doctoral Program of Higher Education of China (Grant No. 20070286037), the Cyanine-Project Foundation of Jiangsu Province of China (Grant No. 1107020060), the Foundation for Climax Talents Plan in Six-Big Fields of Jiangsu Province of China (Grant No. 1107020070), and the New Century Excellent Talents in University (Grant No. NCET-05-0452).

摘要/Abstract

摘要： C-oriented ZnO epitaxial thin films are grown separately on the a-plane and c-plane sapphire substrates by using a molecular-beam epitaxy technique. In contrast to single crystalline ZnO films grown on a-plane sapphire, the films grown on c-plane sapphire are found to be bi-crystalline; some domains have a 30o rotation to reduce the large mismatch between the film and the substrate. The presence of these rotation domains in the bi-crystalline ZnO thin film causes much more carrier scatterings at the boundaries, leading to much lower mobility and smaller mean free path of the mobile carriers than those of the single crystalline one. In addition, the complex impedance spectra are also studied to identify relaxation mechanisms due to the domains and/or domain boundaries in both the single crystalline and bi-crystalline ZnO thin films.

Abstract: C-oriented ZnO epitaxial thin films are grown separately on the a-plane and c-plane sapphire substrates by using a molecular-beam epitaxy technique. In contrast to single crystalline ZnO films grown on a-plane sapphire, the films grown on c-plane sapphire are found to be bi-crystalline; some domains have a 30$^\circ$ rotation to reduce the large mismatch between the film and the substrate. The presence of these rotation domains in the bi-crystalline ZnO thin film causes much more carrier scatterings at the boundaries, leading to much lower mobility and smaller mean free path of the mobile carriers than those of the single crystalline one. In addition, the complex impedance spectra are also studied to identify relaxation mechanisms due to the domains and/or domain boundaries in both the single crystalline and bi-crystalline ZnO thin films.

Key words: ZnO, grain boundaries, complex impedance spectra, single crystalline and bi-crystalline thin films

中图分类号: (Nucleation and growth)

68.55.A-

73.61.Ga (II-VI semiconductors) 68.55.-a (Thin film structure and morphology) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)

路忠林, 邹文琴, 徐明祥, 张凤鸣. Structural and electrical properties of single crystalline and bi-crystalline ZnO thin films grown by molecular beam epitaxy[J]. 中国物理B, 2010, 19(7): 76101-076101.

Lu Zhong-Lin(路忠林), Zou Wen-Qin(邹文琴), Xu Ming-Xiang(徐明祥), and Zhang Feng-Ming(张凤鸣). Structural and electrical properties of single crystalline and bi-crystalline ZnO thin films grown by molecular beam epitaxy[J]. Chin. Phys. B, 2010, 19(7): 76101-076101.

参考文献 23

[1]	Cho S, Ma J, Kim Y, Sun Y, Wong G K L and Ketterson J B 1999 Appl. Phys. Lett. 75 2761
[2]	Cao H, Xu J Y, Seeling E W and Chang R P H 2000 Phys. Rev. Lett. 84 5584
[3]	Tsukazaki A, Ohotmo A, Onuma T, Ohtani M, Makino T, Sumiya M, Ohtani K, Chichibu Shigefusa F, Fuke S, Segawa Y, Ohno H, Koinuma H and Kawasaki M 2005 Nat. Mater. 4 42
[4]	Sun H, Zhang Q F and Wu J L 2007 Acta Phys. Sin. 56 3479 (in Chinese)
[5]	Look D C, Reynolds, Sizelove J R, Jones R L, Litton C W, Cantwell G and Harsch W C 1998 Solid State Commun. 105 399
[6]	Norton D P, Heo Y W, Ivill M P, Ip K, Pearton S J, Chisholm M F and Steiner T 2004 Mater. Today 7 34
[7]	Service 1997 Science 276 895
[8]	Dietl T, Ohno H, Matsukura F, Cubert J and Ferrand D 2000 Science 287 1019
[9]	Chen Y, Ko H J, Hong S K and Yao T 2000 Appl. Phys. Lett. 76 559
[10]	Cheng Z Q, Liu M H, Liu Y P, Chen W, Luo Z Q and Hu X W 2009 Acta Phys. Sin. 58 4260 (in Chinese)
[11]	Liu M, Liu Z W, Gu J F, Qin F W, Ma C Y and Zhang Q Y 2008 Acta Phys. Sin. 57 1133 (in Chinese)
[12]	Zhou X, Wang S Q, Lian G J and Xiong G C 2006 Chin. Phys. 15 0199
[13]	Wang Z J, Song L J, Li S C, Lu Y M, Tian Y X, Liu J Y and Wang L Y 2006 Chin. Phys. 15 2710
[14]	"Ozg"ur "U, Alivov Ya I, Liu C, Teke A, Reshchikov M A, Dovgan S, Avrutin V, Cho S J and Morkocc H 2005 J. Appl. Phys. 98 041301
[15]	Hong N H, Brize V and Sakai J 2005 Appl. Phys. Lett. 86 082505
[16]	Cao Q, Deng J X, Liu G L, Chen Y X, Yan S S and Mei L M 2007 Chin. Phys. Lett. 24 2951
[17]	Fons P, Iwata K, Yamada A, Matsubara K, Niki S, Nakahara K, Tanabe T and Takasu H 2000 Appl. Phys. Lett. 77 1801
[18]	Orton J W and Powell M J 1980 Rep. Prog. Phys. 43 1263
[19]	Behan A J, Mokhtari A, Blythe H J, Score D, Xu X H, Neal J R, Fox A M and Gehring G A 2008 Phys. Rev. Lett. 100 047206
[20]	Shao R, Kalinin S V and Bonnell D A 2003 Appl. Phys. Lett. 82 1869
[21]	Ortega N, Kumar A, Bhattacharya P, Majumder S B and Katiyar R S 2008 Phys. Rev. B 77 014111
[22]	Hsu H S, Huang J C A, Chen S F and Liu C P 2007 Appl. Phys. Lett. 90 102506
[23]	Hsu C Y, Huang J C A, Lee Y H, Chen S F, Liu C P, Sun S J and Tzeng Yonhua 2009 Appl. Phys. Lett. 94 052504 endfootnotesize

Structural and electrical properties of single crystalline and bi-crystalline ZnO thin films grown by molecular beam epitaxy

Structural and electrical properties of single crystalline and bi-crystalline ZnO thin films grown by molecular beam epitaxy

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