中国物理B ›› 2010, Vol. 19 ›› Issue (7): 76101-076101.doi: 10.1088/1674-1056/19/7/076101
徐明祥1, 邹文琴2, 张凤鸣2, 路忠林3
Lu Zhong-Lin(路忠林)a)b)c)†, Zou Wen-Qin(邹文琴) a), Xu Ming-Xiang(徐明祥)c), and Zhang Feng-Ming(张凤鸣)a)
摘要: C-oriented ZnO epitaxial thin films are grown separately on the a-plane and c-plane sapphire substrates by using a molecular-beam epitaxy technique. In contrast to single crystalline ZnO films grown on a-plane sapphire, the films grown on c-plane sapphire are found to be bi-crystalline; some domains have a 30o rotation to reduce the large mismatch between the film and the substrate. The presence of these rotation domains in the bi-crystalline ZnO thin film causes much more carrier scatterings at the boundaries, leading to much lower mobility and smaller mean free path of the mobile carriers than those of the single crystalline one. In addition, the complex impedance spectra are also studied to identify relaxation mechanisms due to the domains and/or domain boundaries in both the single crystalline and bi-crystalline ZnO thin films.
中图分类号: (Nucleation and growth)