中国物理B ›› 2010, Vol. 19 ›› Issue (3): 36801-036801.doi: 10.1088/1674-1056/19/3/036801
陈贵锋1, 杨辉2, 吴玉新3, 朱建军3, 张书明3, 江德生3, 刘宗顺3, 赵德刚3, 王辉3, 王玉田3
Wu Yu-Xin(吴玉新)a), Zhu Jian-Jun(朱建军)a)†, Chen Gui-Feng(陈贵锋)b), Zhang Shu-Ming(张书明)a), Jiang De-Sheng(江德生) a), Liu Zong-Shun(刘宗顺)a), Zhao De-Gang(赵德刚)a), Wang Hui(王辉)a), Wang Yu-Tian(王玉田)a), and Yang Hui(杨辉)a)c)
摘要: We present the growth of GaN epilayer on Si (111) substrate with a single AlGaN interlayer sandwiched between the GaN epilayer and AlN buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an AlN buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.
中图分类号: (Nucleation and growth)