Disorder-induced enhancement of conductance in doped nanowires

doi:10.1088/1674-1056/19/11/117201

中国物理B ›› 2010, Vol. 19 ›› Issue (11): 117201-117202.doi: 10.1088/1674-1056/19/11/117201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Disorder-induced enhancement of conductance in doped nanowires

徐宁, 王保林, 孙厚谦, 孔凡杰

Department of Physics, Yancheng Institute of Technology, Yancheng 224051, China

收稿日期:2010-05-01 修回日期:2010-06-24 出版日期:2010-11-15 发布日期:2010-11-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 10874052), Foundation for the Author of National Excellent Doctoral Dissertation of China (Grant No. 200726).

Disorder-induced enhancement of conductance in doped nanowires

Xu Ning(徐宁)^†,Wang Bao-Lin(王保林), Sun Hou-Qian(孙厚谦), and Kong Fan-Jie(孔凡杰)

Department of Physics, Yancheng Institute of Technology, Yancheng 224051, China

Received:2010-05-01 Revised:2010-06-24 Online:2010-11-15 Published:2010-11-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 10874052), Foundation for the Author of National Excellent Doctoral Dissertation of China (Grant No. 200726).

摘要/Abstract

摘要： A new mechanism is proposed to explain the enhancement of conductance in doped nanowires. It is shown that the anomalous enhancement of conductance is due to surface doping. The conductance in doped nanowires increases with dopant concentration, which is qualitatively consistent with the existing experimental results. In addition, the I-V curves are linear and thus suggest that the metal electrodes make ohmic contacts to the shell-doped nanowires. The electric current increases with wire diameter (D) and decreases exponentially with wire length (L). Therefore, the doped nanowires have potential application in nanoscale electronic and optoelectronic devices.

Abstract: A new mechanism is proposed to explain the enhancement of conductance in doped nanowires. It is shown that the anomalous enhancement of conductance is due to surface doping. The conductance in doped nanowires increases with dopant concentration, which is qualitatively consistent with the existing experimental results. In addition, the I-V curves are linear and thus suggest that the metal electrodes make ohmic contacts to the shell-doped nanowires. The electric current increases with wire diameter (D) and decreases exponentially with wire length (L). Therefore, the doped nanowires have potential application in nanoscale electronic and optoelectronic devices.

Key words: conductance, nanowires

中图分类号: (Other materials)

61.72.up

73.40.Ns (Metal-nonmetal contacts) 73.63.-b (Electronic transport in nanoscale materials and structures)

徐宁, 王保林, 孙厚谦, 孔凡杰. Disorder-induced enhancement of conductance in doped nanowires[J]. 中国物理B, 2010, 19(11): 117201-117202.

Xu Ning(徐宁),Wang Bao-Lin(王保林), Sun Hou-Qian(孙厚谦), and Kong Fan-Jie(孔凡杰). Disorder-induced enhancement of conductance in doped nanowires[J]. Chin. Phys. B, 2010, 19(11): 117201-117202.

参考文献 25

[1]	Duan X F, Huang Y, Agarwal R and Lieber C M 2003 Nature (London) 421 241
[2]	Huang M H, Mao S, Feick H, Yan H Q, Wu Y Y, Kind H, Weber E, Russo R and Yang P D 2001 Science 292 1897
[3]	Gudiksen M S, Lauhon L J, Wang J F, Smith D C and Lieber C L 2002 Nature (London) 415 617
[4]	Morales A M, and Lieber C M 1998 Science 279 208
[5]	Lauhon L J, Gudlksen M S, Wang D and Lieber C M 2002 Nature (London) 420 57
[6]	Wu Y Y, Fan R and Yang P D 2002 Nano Lett. 2 83
[7]	Bj"ork M T, Ohlsson B J, Sass T, Persson A I, Thelander C, Magnusson M H, Deppert K, Wallenberg L R and Samuelson L 2002 Nano Lett. 2 87
[8]	Yang P D 2005 MRS Bull. 30 85
[9]	Ma D D D, Lee C S, Au F C K, Tong S Y and Lee S T 2003 Science bf 299 1874
[10]	Wu Y, Xiang J, Yang C, Lu W and Lieber C M 2004 Nature (London) 430 61
[11]	Doh Y J, van Dam J A, Roest A L, Bakers E P A M, Kouwenhoven L P and De Franceschi S 2005 Science 309 272
[12]	Friedman R S, MacAlpine M C, Ricketts D S, Ham D and Lieber C M 2005 Nature (London) 434 1085
[13]	Wang W U, Chen C, Lin K H, Fang Y and Lieber C M 2005 Proc. Natl. Acad. Sci. U.S.A. 102 3208
[14]	Patolsky F, Zheng G F, Hayden O, Lakadamydi M, Zhuang X W and Lieber C M 2004 Proc. Natl. Acad. Sci. U.S.A. 101 14017
[15]	Radovanovic P V, Barrelet C J, Gradecak S, Qian F and Lieber C L 2005 Nano Lett. 5 1407
[16]	He P M, Li Z H, Wang M, Wang F F, Wang X Q, Xu Y B and Yang B 2005 Acta Phys. Sin. 54 1347 (in Chinese)
[17]	Cai J M, Gao H J, Guo H M, He X B, Shen C M, Shi D X, Yang T Z and Zhang C D 2008 Chin. Phys. B 17 3444
[18]	Cui Y, Duan X F, Hu J T and Lieber C M 2000 J. Phys. Chem. B 104 5213
[19]	Yu J Y, Chung S W and Heath J R 2000 J. Phys. Chem. B 104 11864
[20]	Ma D D D, Lee C S and Lee S T 2001 Appl. Phys. Lett. 79 15
[21]	Huo H B, Dai L, Liu C, You L P, Yang W Q, Ma R M, Ran G Z and Qin G G 2006 Nanotechnology 17 5912
[22]	Lee P A and Ramakrishnan T V 1985 Rev. Mod. Phys. 57 287
[23]	Ando T 1991 Phys. Rev. B 44 8017
[24]	Anantram M P and Govindan T R 1998 Phys. Rev. B 58 4882
[25]	Datta S 1995 Electronic Transport in Mesoscopic System (Cambridge, UK: Cambridge University Press)

Disorder-induced enhancement of conductance in doped nanowires

Disorder-induced enhancement of conductance in doped nanowires

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 25

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	秦玉香, 刘成, 谢威威, 崔梦阳. Controllable synthesis of ultrathin vanadium oxide nanobelts via an EDTA-mediated hydrothermal process[J]. 中国物理B, 2016, 25(2): 27307-027307.
[2]	孟令川, 娄志东, 杨盛谊, 侯延冰, 滕枫, 刘小君, 李云白 . White organic light-emitting diodes based on combined electromer and monomer emission in doubly-doped polymers[J]. 中国物理B, 2012, 21(8): 88504-088504.
[3]	秦希峰, 李洪珍, 李双, 梁毅, 王凤翔, 付刚, 季艳菊. Study of the lateral distribution of neodymium ions implanted in silicon[J]. 中国物理B, 2011, 20(8): 86103-086103.
[4]	林雪, 关庆丰, 刘洋, 李海波. Lanthanum-doped Bi₄Ti₃O₁₂ ceramics prepared by high-pressure technique[J]. 中国物理B, 2010, 19(10): 107701-107701.
[5]	麻焕锋, 潘敏, 黄整, 强伟荣, 王龙, 梁方艳, 赵勇. Lattice and magnetism in superconducting compounds Ca_1-xK_xFe₂As₂[J]. 中国物理B, 2010, 19(3): 37401-037401.
[6]	吴云翼, 王晓慧, 李龙土. Ferroelectric and dielectric properties of La/Mn co-doped Bi₄Ti₃O₁₂ ceramics[J]. 中国物理B, 2010, 19(3): 37701-037701.
[7]	罗志华, 唐东升, 海阔, 余芳, 陈亚奇, 何熊武, 彭跃华, 袁华军, 羊亿. Controlling the electronic structure of SnO₂ nanowires by Mo-doping[J]. 中国物理B, 2010, 19(2): 26102-026102.
[8]	蒋自强, 王育华, 龚宇. Doping effects of Nb⁵⁺ on red long afterglow phosphor CaTiO₃:Pr³⁺[J]. 中国物理B, 2010, 19(2): 27801-027801.
[9]	贠江妮, 张志勇, 闫军锋, 邓周虎. First-principles study of La and Sb-doping effects onelectronic structure and optical properties of SrTiO₃[J]. 中国物理B, 2010, 19(1): 17101-017101.
[10]	向霞, 陈猛, 陈美艳, 祖小涛, 朱莎, 王鲁闽. Optical and structural properties of Ge-ion-implanted fused silica after annealing in different ambient conditions[J]. 中国物理B, 2010, 19(1): 18107-018107.
[11]	王阳元, 郭辉, 王悦湖, 张玉明, 乔大勇, 张义门. Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation[J]. 中国物理B, 2009, 18(10): 4470-4473.
[12]	贠江妮, 张志勇. Electronic structure and optical properties of Nb-doped Sr₂TiO₄ by density function theory calculation[J]. 中国物理B, 2009, 18(7): 2945-2952.
[13]	颜玉珍, 李辉武, 胡梁宾. Dissipationless spin-Hall current contribution in the extrinsic spin-Hall effect[J]. 中国物理B, 2009, 18(7): 2981-2987.
[14]	张俊荣, 何伦华, 曹慧波, 王芳卫, 张泮霖. The effect of doped ions on single-molecule magnets of the Mn₁₂-Ac family[J]. 中国物理B, 2008, 17(11): 4318-4322.
[15]	冀会辉, 于民, 任黎明, 张兴, 黄如, 张有光. Simulation of plasma doping process by using the localized molecular dynamics method[J]. 中国物理B, 2008, 17(9): 3428-3432.