Optical and structural properties of Ge-ion-implanted fused silica after annealing in different ambient conditions

doi:10.1088/1674-1056/19/1/018107

中国物理B ›› 2010, Vol. 19 ›› Issue (1): 18107-018107.doi: 10.1088/1674-1056/19/1/018107

Optical and structural properties of Ge-ion-implanted fused silica after annealing in different ambient conditions

向霞¹, 陈猛¹, 陈美艳¹, 祖小涛¹, 朱莎², 王鲁闽²

(1)Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, China; (2)Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI 48109, USA

收稿日期:2009-08-04 修回日期:2009-08-24 出版日期:2010-01-15 发布日期:2010-01-15
基金资助:
Project supported by the Foundation for Young Scholars of University of Electronic Science and Technology of China (Grant No. L08010401JX0806).

Optical and structural properties of Ge-ion-implanted fused silica after annealing in different ambient conditions

Xiang Xia(向霞)^a)^†, Chen Meng(陈猛)^a), Chen Mei-Yan(陈美艳)^a), Zu Xiao-Tao(祖小涛)^a),Zhu Sha(朱莎)^b), and Wang Lu-Min(王鲁闽)^b)

^a Department of Applied Physics, University of Electronic Science and Technology of China, Chengdu 610054, China; ^b Department of Nuclear Engineering and Radiological Sciences, University of Michigan, Ann Arbor, MI 48109, USA

Received:2009-08-04 Revised:2009-08-24 Online:2010-01-15 Published:2010-01-15
Supported by:
Project supported by the Foundation for Young Scholars of University of Electronic Science and Technology of China (Grant No. L08010401JX0806).

摘要/Abstract

摘要： Ge^ + ions are implanted into fused silica glass at room temperature and a fluence of 1× 10^17~cm^ - 2. The as-implanted samples are annealed in O₂, N₂ and Ar atmospheres separately. Ge^0, GeO and GeO₂ coexist in the as-implanted and annealed samples. Annealing in different atmospheres at 600~\du\ leads each composite to change its content. After annealing at 1000~\du, there remains some amount of Ge^0 in the substrates. However, the content of Ge decreases due to out-diffusion. After annealing in N₂, Si--N composite is formed. The absorption peak of GeO appears at 240~nm after annealing in O₂ atmosphere, and a new absorption peak occurs at 418~nm after annealing in N₂ atmosphere, which is attributed to the Si--N composite. There is no absorption peak appearing after annealing in Ar atmosphere. Transmission electron microscopic images confirm the formation of Ge nanoparticles in the as-implanted sample and GeO₂ nanoparticles in the annealed sample. In the present study, the GeO content and the GeO₂ content depend on annealing temperature and atmosphere. Three photoluminescence emission band peaks at 290, 385 and 415~nm appear after ion implantation and they become strong with the increase of annealing temperature below 700~\du, and their photoluminescences recover to the values of as-grown samples after annealing at 700~\du. Optical absorption and photoluminescence depend on the annealing temperature and atmosphere.

Abstract: Ge$^+$ ions are implanted into fused silica glass at room temperature and a fluence of $1× 10^{17}$ cm$^{- 2}$. The as-implanted samples are annealed in O₂, N₂ and Ar atmospheres separately. Ge$^0$, GeO and GeO₂ coexist in the as-implanted and annealed samples. Annealing in different atmospheres at 600 $^\circ$C leads each composite to change its content. After annealing at 1000 $^\circ$C, there remains some amount of Ge$^0$ in the substrates. However, the content of Ge decreases due to out-diffusion. After annealing in N₂, Si--N composite is formed. The absorption peak of GeO appears at 240 nm after annealing in O₂ atmosphere, and a new absorption peak occurs at 418 nm after annealing in N₂ atmosphere, which is attributed to the Si--N composite. There is no absorption peak appearing after annealing in Ar atmosphere. Transmission electron microscopic images confirm the formation of Ge nanoparticles in the as-implanted sample and GeO₂ nanoparticles in the annealed sample. In the present study, the GeO content and the GeO₂ content depend on annealing temperature and atmosphere. Three photoluminescence emission band peaks at 290, 385 and 415 nm appear after ion implantation and they become strong with the increase of annealing temperature below 700 $^\circ$C, and their photoluminescences recover to the values of as-grown samples after annealing at 700 $^\circ$C. Optical absorption and photoluminescence depend on the annealing temperature and atmosphere.

Key words: nanoparticles, optical absorption, photo luminescence, ion implantation

中图分类号: (Other materials)

61.72.up

61.46.Df (Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)) 61.72.Cc (Kinetics of defect formation and annealing) 78.40.Ha (Other nonmetallic inorganics) 78.55.Hx (Other solid inorganic materials) 78.67.Bf (Nanocrystals, nanoparticles, and nanoclusters)

向霞, 陈猛, 陈美艳, 祖小涛, 朱莎, 王鲁闽. Optical and structural properties of Ge-ion-implanted fused silica after annealing in different ambient conditions[J]. 中国物理B, 2010, 19(1): 18107-018107.

Xiang Xia(向霞), Chen Meng(陈猛), Chen Mei-Yan(陈美艳), Zu Xiao-Tao(祖小涛),Zhu Sha(朱莎), and Wang Lu-Min(王鲁闽) . Optical and structural properties of Ge-ion-implanted fused silica after annealing in different ambient conditions[J]. Chin. Phys. B, 2010, 19(1): 18107-018107.

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Optical and structural properties of Ge-ion-implanted fused silica after annealing in different ambient conditions

Optical and structural properties of Ge-ion-implanted fused silica after annealing in different ambient conditions

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