Study of the lateral distribution of neodymium ions implanted in silicon

doi:10.1088/1674-1056/20/8/086103

中国物理B ›› 2011, Vol. 20 ›› Issue (8): 86103-086103.doi: 10.1088/1674-1056/20/8/086103

Study of the lateral distribution of neodymium ions implanted in silicon

李洪珍¹, 秦希峰², 李双², 梁毅², 王凤翔², 付刚², 季艳菊²

(1)College of Physics and Engineering, Qufu Normal University, Qufu 273165, China; (2)College of Science, Shandong Jianzhu University, Jinan 250101, China

收稿日期:2010-12-08 修回日期:2011-01-26 出版日期:2011-08-15 发布日期:2011-08-15
基金资助:
Project supported by the Shandong Jianzhu University Foundation, China (Grant No. XN070109) and the National Natural Science Foundation of China (Grant No. 51042002).

Study of the lateral distribution of neodymium ions implanted in silicon

Qin Xi-Feng(秦希峰)^a)^†, Li Hong-Zhen(李洪珍)^b), Li Shuang(李双)^a), Liang Yi(梁毅)^a), Wang Feng-Xiang(王凤翔)^a), Fu Gang(付刚)^a), and Ji Yan-Ju(季艳菊)^a)

^a College of Science, Shandong Jianzhu University, Jinan 250101, China; ^b College of Physics and Engineering, Qufu Normal University, Qufu 273165, China

Received:2010-12-08 Revised:2011-01-26 Online:2011-08-15 Published:2011-08-15
Supported by:
Project supported by the Shandong Jianzhu University Foundation, China (Grant No. XN070109) and the National Natural Science Foundation of China (Grant No. 51042002).

摘要/Abstract

摘要： Due to the need to reduce electronic device sizes, it is very important to consider the depth and lateral distribution of ions implanted into a crystalline target. This paper reports that Nd ions with energies of 200 keV to 500 keV and dose of 5 × 10¹⁵ ions/cm² are implanted into Si single crystals at room temperature under the angles of 0°, 30°, and 45°, respectively. The lateral spreads of 200 keV—500 keV Nd ions implanted in Si sample are measured by Rutherford backscattering technique. The results show that the measured values are in good agreement with those obtained from the prediction of SRIM2010 codes.

关键词: Nd ion implantation, silicon, lateral distribution, Rutherford backscattering technique

Abstract: Due to the need to reduce electronic device sizes, it is very important to consider the depth and lateral distribution of ions implanted into a crystalline target. This paper reports that Nd ions with energies of 200 keV to 500 keV and dose of 5 × 10¹⁵ ions/cm² are implanted into Si single crystals at room temperature under the angles of 0°, 30°, and 45°, respectively. The lateral spreads of 200 keV—500 keV Nd ions implanted in Si sample are measured by Rutherford backscattering technique. The results show that the measured values are in good agreement with those obtained from the prediction of SRIM2010 codes.

Key words: Nd ion implantation, silicon, lateral distribution, Rutherford backscattering technique

中图分类号: (Impurity distribution)

61.72.sh

61.72.up (Other materials) 82.80.Yc (Rutherford backscattering (RBS), and other methods ofchemical analysis) 85.40.Ry (Impurity doping, diffusion and ion implantation technology)

秦希峰, 李洪珍, 李双, 梁毅, 王凤翔, 付刚, 季艳菊. Study of the lateral distribution of neodymium ions implanted in silicon[J]. 中国物理B, 2011, 20(8): 86103-086103.

Qin Xi-Feng(秦希峰), Li Hong-Zhen(李洪珍), Li Shuang(李双), Liang Yi(梁毅), Wang Feng-Xiang(王凤翔), Fu Gang(付刚), and Ji Yan-Ju(季艳菊) . Study of the lateral distribution of neodymium ions implanted in silicon[J]. Chin. Phys. B, 2011, 20(8): 86103-086103.

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Study of the lateral distribution of neodymium ions implanted in silicon

Study of the lateral distribution of neodymium ions implanted in silicon

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