中国物理B ›› 2010, Vol. 19 ›› Issue (1): 18102-018102.doi: 10.1088/1674-1056/19/1/018102

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Fabrication and optical properties of MgxZn1-xO thin films

袁慧敏1, 张锡健2, 王卿璞2, 王统2, 马洪磊2   

  1. (1)Department of Physical Science and Technology, Shandong Institute of Education, Jinan 250013, China; (2)School of Physics, Shandong University, Jinan 250100, China
  • 收稿日期:2009-06-10 修回日期:2009-06-29 出版日期:2010-01-15 发布日期:2010-01-15
  • 基金资助:
    Project supported by the National Found for Fostering Talents of Basic Science (NFFTBS) of China (Grant No. J0730318) and the Natural Science Foundation of Shandong Province, China (Grant No. Y2007F02).

Fabrication and optical properties of MgxZn1-xO thin films

Zhang Xi-Jian(张锡健)a), Yuan Hui-Min(袁慧敏)b), Wang Qing-Pu(王卿璞)a)† , Wang Tong(王统)a), and Ma Hong-Lei(马洪磊) a)   

  1. a School of Physics, Shandong University, Jinan 250100, China; b Department of Physical Science and Technology, Shandong Institute of Education, Jinan 250013, China
  • Received:2009-06-10 Revised:2009-06-29 Online:2010-01-15 Published:2010-01-15
  • Supported by:
    Project supported by the National Found for Fostering Talents of Basic Science (NFFTBS) of China (Grant No. J0730318) and the Natural Science Foundation of Shandong Province, China (Grant No. Y2007F02).

摘要: Mg_xZn_1 - xO (x \le 0.3) thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at room temperature. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis perpendicular to the substrates. The Mg content in the films is slightly larger than that in the targets. The refractive indices of Mg_xZn_1 - xO films measured at room temperature by spectroscopic ellipsometry (SE) on the wavelength 632.8~nm are systematically decreased with the increasing of Mg content. Optical band gaps of Mg_xZn_1 - xO films are determined by the transmittance spectra. With increasing Mg content, the absorption edges of Mg_xZn_1 - xO films shift to higher energies and band gaps linearly increase from 3.24~eV at x=0 to 3.90~eV at x =0.30.

Abstract: Mg$_x$Zn$_{1 - x}$O ($x \le 0.3$) thin films have been prepared on silicon substrates by radio frequency magnetron sputtering at room temperature. The thin films have hexagonal wurtzite single-phase structure and a preferred orientation with the c-axis perpendicular to the substrates. The Mg content in the films is slightly larger than that in the targets. The refractive indices of Mg$_x$Zn$_{1 - x}$O films measured at room temperature by spectroscopic ellipsometry (SE) on the wavelength 632.8 nm are systematically decreased with the increasing of Mg content. Optical band gaps of Mg$_x$Zn$_{1 - x}$O films are determined by the transmittance spectra. With increasing Mg content, the absorption edges of Mg$_x$Zn$_{1 - x}$O films shift to higher energies and band gaps linearly increase from 3.24 eV at $x=0$ to 3.90 eV at $x =0.30$.

Key words: semiconductor, thin films, alloys, optical properties

中图分类号:  (Nucleation and growth)

  • 68.55.A-
68.55.-a (Thin film structure and morphology) 78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)) 78.66.Hf (II-VI semiconductors) 81.15.Cd (Deposition by sputtering)