Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar a-plane GaN films

doi:10.1088/1674-1056/19/1/018101

中国物理B ›› 2010, Vol. 19 ›› Issue (1): 18101-018101.doi: 10.1088/1674-1056/19/1/018101

Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar a-plane GaN films

赵璐冰, 于彤军, 吴洁君, 杨志坚, 张国义

Research Center for Wide Gap Semiconductors, Peking University,State Key Laboratory for Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing 100871, China

收稿日期:2009-04-27 修回日期:2009-06-04 出版日期:2010-01-15 发布日期:2010-01-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60676032, 60577030 and 60476028) and the National Basic Research Program of China (Grant No. 2007CB307004) and the National Science Foundation for Post-doctoral Scientists of China (Grant No. 20060400018).

Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar a-plane GaN films

Zhao Lu-Bing(赵璐冰), Yu Tong-Jun(于彤军)^†, Wu Jie-Jun(吴洁君), Yang Zhi-Jian(杨志坚), and Zhang Guo-Yi(张国义)

Research Center for Wide Gap Semiconductors, Peking University,State Key Laboratory for Artificial Microstructure and Microscopic Physics, School of Physics, Peking University, Beijing 100871, China

Received:2009-04-27 Revised:2009-06-04 Online:2010-01-15 Published:2010-01-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60676032, 60577030 and 60476028) and the National Basic Research Program of China (Grant No. 2007CB307004) and the National Science Foundation for Post-doctoral Scientists of China (Grant No. 20060400018).

摘要/Abstract

摘要： Non-polar a-plane (1$1\bar{2}$0) GaN films have been grown on r-plane (1$\bar{1}$02) sapphire substrates by metal organic chemical vapour deposition. The influences of V/III ratio on the species diffusion anisotropy of a-plane GaN films were investigated by scanning electron microscopy, cathodoluminescence and high-resolution x-ray diffraction measurements. The anisotropy of a-plane GaN films may result from the different migration length of adatoms along two in-plane directions. V/III ratio has an effect on the growth rates of different facets and crystal quality. The stripe feature morphology was obviously observed in the film with a high V/III ratio because of the slow growth rate along the [1$\bar{1}$00] direction. When the V/III ratio increased from 1000 to 6000, the in-plane crystal quality anisotropy was decreased due to the weakened predominance in migration length of gallium adatoms.

Abstract: Non-polar a-plane (1$1\bar{2}$0) GaN films have been grown on r-plane (1$\bar{1}$02) sapphire substrates by metal organic chemical vapour deposition. The influences of V/III ratio on the species diffusion anisotropy of a-plane GaN films were investigated by scanning electron microscopy, cathodoluminescence and high-resolution x-ray diffraction measurements. The anisotropy of a-plane GaN films may result from the different migration length of adatoms along two in-plane directions. V/III ratio has an effect on the growth rates of different facets and crystal quality. The stripe feature morphology was obviously observed in the film with a high V/III ratio because of the slow growth rate along the [1$\bar{1}$00] direction. When the V/III ratio increased from 1000 to 6000, the in-plane crystal quality anisotropy was decreased due to the weakened predominance in migration length of gallium adatoms.

Key words: non-polar GaN, V/III ratio, anisotropy, migration length

中图分类号: (Diffusion of adsorbates, kinetics of coarsening and aggregation)

68.43.Jk

66.30.H- (Self-diffusion and ionic conduction in nonmetals) 68.37.Hk (Scanning electron microscopy (SEM) (including EBIC)) 68.55.A- (Nucleation and growth) 78.60.Hk (Cathodoluminescence, ionoluminescence) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))

赵璐冰, 于彤军, 吴洁君, 杨志坚, 张国义. Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar a-plane GaN films[J]. 中国物理B, 2010, 19(1): 18101-018101.

Zhao Lu-Bing(赵璐冰), Yu Tong-Jun(于彤军), Wu Jie-Jun(吴洁君), Yang Zhi-Jian(杨志坚), and Zhang Guo-Yi(张国义). Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar a-plane GaN films[J]. Chin. Phys. B, 2010, 19(1): 18101-018101.

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Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar a-plane GaN films

Effects of V/III ratio on species diffusion anisotropy in the MOCVD growth of non-polar a-plane GaN films

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