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Zi-Hao Chen(陈子豪), Yong-Sheng Wang(王永胜), Ning Zhang(张宁), Bin Zhou(周兵), Jie Gao(高洁), Yan-Xia Wu(吴艳霞), Yong Ma(马永), Hong-Jun Hei(黑鸿君), Yan-Yan Shen(申艳艳), Zhi-Yong He(贺志勇), and Sheng-Wang Yu(于盛旺). Effects of preparation parameters on growth and properties of β-Ga2O3 film[J]. 中国物理B, 2023, 32(1): 17301-017301. |
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Yao-Pu Lang(郎垚璞), Qing-Gang Liu(刘庆纲), Qi Wang(王奇), Xing-Lin Zhou(周兴林), and Guang-Yi Jia(贾光一). Method of measuring one-dimensional photonic crystal period-structure-film thickness based on Bloch surface wave enhanced Goos-Hänchen shift[J]. 中国物理B, 2023, 32(1): 17802-017802. |
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Chen Wang(王琛), Wenmo Lu(路文墨), Fengnan Li(李奉南), Qiaomei Luo(罗巧梅), and Fei Ma(马飞)†. Migration of weakly bonded oxygen atoms in a-IGZO thin films and the positive shift of threshold voltage in TFTs[J]. 中国物理B, 2022, 31(9): 96101-096101. |
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Xiufang Yang(杨秀芳), Shengsheng Zhao(赵生盛), Qian Huang(黄茜), Cao Yu(郁超), Jiakai Zhou(周佳凯), Xiaoning Liu(柳晓宁), Xianglin Su(苏祥林),Ying Zhao(赵颖), and Guofu Hou(侯国付). Sub-stochiometric MoOx by radio-frequency magnetron sputtering as hole-selective passivating contacts for silicon heterojunction solar cells[J]. 中国物理B, 2022, 31(9): 98401-098401. |
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Min Huang(黄敏), Yan-Song Liu(刘艳松), Zhi-Bing He(何智兵), and Yong Yi(易勇). Structure, phase evolution and properties of Ta films deposited using hybrid high-power pulsed and DC magnetron co-sputtering[J]. 中国物理B, 2022, 31(6): 66101-066101. |
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Shuyao Chen(陈姝瑶), Yunfei Xie(谢云飞), Yucong Yang(杨玉聪), Dong Gao(高栋), Donghua Liu(刘冬华), Lin Qin(秦林), Wei Yan(严巍), Bi Tan(谭碧), Qiuli Chen(陈秋丽), Tao Gong(龚涛), En Li(李恩), Lei Bi(毕磊), Tao Liu(刘涛), and Longjiang Deng(邓龙江). The 50 nm-thick yttrium iron garnet films with perpendicular magnetic anisotropy[J]. 中国物理B, 2022, 31(4): 48503-048503. |
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Gang Li(李刚), Yuqian Huang(黄玉茜), Rongfeng Tang(唐荣风), Bo Che(车波), Peng Xiao(肖鹏), Weitao Lian(连伟涛), Changfei Zhu(朱长飞), and Tao Chen(陈涛). An n—n type heterojunction enabling highly efficientcarrier separation in inorganic solar cells[J]. 中国物理B, 2022, 31(3): 38803-038803. |
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Zhenzhen Wang(王珍珍), Weiheng Qi(戚炜恒), Jiachang Bi(毕佳畅), Xinyan Li(李欣岩), Yu Chen(陈雨), Fang Yang(杨芳), Yanwei Cao(曹彦伟), Lin Gu(谷林), Qinghua Zhang(张庆华), Huanhua Wang(王焕华), Jiandi Zhang(张坚地), Jiandong Guo(郭建东), and Xiaoran Liu(刘笑然). Anomalous strain effect in heteroepitaxial SrRuO3 films on (111) SrTiO3 substrates[J]. 中国物理B, 2022, 31(12): 126801-126801. |
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Qing-Jian Lu(陆青鑑), Min Gao(高敏), Chang Lu(路畅), Fei Long(龙飞), Tai-Song Pan(潘泰松), and Yuan Lin(林媛). Probing thermal properties of vanadium dioxide thin films by time-domain thermoreflectance without metal film[J]. 中国物理B, 2021, 30(9): 96801-096801. |
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Wan-Liang Liu(刘万良), Ying Chen(陈莹), Tao Li(李涛), Zhi-Tang Song(宋志棠), and Liang-Cai Wu(吴良才). Effect of Mo doping on phase change performance of Sb2Te3[J]. 中国物理B, 2021, 30(8): 86801-086801. |
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Ming Chu(褚明), Shao-Bo Liu(刘少博), An-Ran Yu(蔚安然), Hao-Miao Yu(于浩淼), Jia-Jun Qin(秦佳俊), Rui-Chen Yi(衣睿宸), Yuan Pei(裴远), Chun-Qin Zhu(朱春琴), Guang-Rui Zhu(朱光瑞), Qi Zeng(曾琪), and Xiao-Yuan Hou(侯晓远). Accurate capacitance-voltage characterization of organic thin films with current injection[J]. 中国物理B, 2021, 30(8): 87301-087301. |
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Zi-Bo Zhang(张子博) and Yong Hu(胡勇). Zero-field skyrmions in FeGe thin films stabilized through attaching a perpendicularly magnetized single-domain Ni layer[J]. 中国物理B, 2021, 30(7): 77503-077503. |
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Hussein T. Salloom, Rushdi I. Jasim, Nadir Fadhil Habubi, Sami Salman Chiad, M Jadan, and Jihad S. Addasi. Gas sensor using gold doped copper oxide nanostructured thin films as modified cladding fiber[J]. 中国物理B, 2021, 30(6): 68505-068505. |
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Qi-Xun Guo(郭奇勋), Zhong-Xu Ren(任中旭), Yi-Ya Huang(黄意雅), Zhi-Chao Zheng(郑志超), Xue-Min Wang(王学敏), Wei He(何为), Zhen-Dong Zhu(朱振东), and Jiao Teng(滕蛟). Effects of post-annealing on crystalline and transport properties of Bi2Te3 thin films[J]. 中国物理B, 2021, 30(6): 67307-067307. |
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Hui Wang(王辉), Meng Wu(吴猛), Haiping Zhou(周海平), Bo Zhang(张博), Shixin Hu(胡世欣), Tianyong Ma(马天勇), Zhiwei Li(李志伟), Liang Qiao(乔亮), Tao Wang(王涛), and Fashen Li(李发伸). Effect of hydrogen plasma implantation on the micro-structure and magnetic properties of hcp-Co8057Fe4Ir16 thin films[J]. 中国物理B, 2021, 30(5): 57505-057505. |