中国物理B ›› 2009, Vol. 18 ›› Issue (11): 4707-4710.doi: 10.1088/1674-1056/18/11/016

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Fidelity of an electron in one-dimensional determined potentials

童培庆1, 宋文广2   

  1. (1)Department of Physics, Nanjing Normal University, Nanjing 210097, China; (2)Department of Physics, Nanjing Normal University, Nanjing 210097, China;Department of Basic Disciplines, International Studies University of People's Liberation Army, Nanjing 210039, China
  • 收稿日期:2009-03-07 修回日期:2009-04-29 出版日期:2009-11-20 发布日期:2009-11-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 10674072) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No 20060319007).

Fidelity of an electron in one-dimensional determined potentials

Song Wen-Guang(宋文广)a)b) and Tong Pei-Qing(童培庆)a)†   

  1. a Department of Physics, Nanjing Normal University, Nanjing 210097, China; b Department of Basic Disciplines, International Studies University of People's Liberation Army, Nanjing 210039, China
  • Received:2009-03-07 Revised:2009-04-29 Online:2009-11-20 Published:2009-11-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 10674072) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No 20060319007).

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摘要： We numerically study the fidelity of an electron in the one-dimensional Harper model and in the one-dimensional slowly varying potential model. Our results show that many properties of the two models can be well reflected by the fidelity: (i) the mobility edge and metal--insulator transition can be characterized by the static fidelity; (ii) the extended state and localized state can be identified by the dynamic fidelity. Therefore, it may broaden the applied areas of the fidelity.

Abstract: We numerically study the fidelity of an electron in the one-dimensional Harper model and in the one-dimensional slowly varying potential model. Our results show that many properties of the two models can be well reflected by the fidelity: (i) the mobility edge and metal--insulator transition can be characterized by the static fidelity; (ii) the extended state and localized state can be identified by the dynamic fidelity. Therefore, it may broaden the applied areas of the fidelity.

Key words: fidelity, extended and localized state, metal--insulator transition, mobility edge

中图分类号:  (Metal-insulator transitions and other electronic transitions)

  • 71.30.+h
71.55.Jv (Disordered structures; amorphous and glassy solids) 03.67.-a (Quantum information) 02.60.Cb (Numerical simulation; solution of equations)