中国物理B ›› 2008, Vol. 17 ›› Issue (4): 1467-1471.doi: 10.1088/1674-1056/17/4/053
顾广瑞1, 金哲1, Ito Toshimichi2
Gu Guang-Rui(顾广瑞)a)†, Jin Zhe(金哲)a), and Ito Toshimichib)
摘要: Nano-sheet carbon films are prepared on Si wafers by means of quartz-tube microwave plasma chemical vapour deposition (MPCVD) in a gas mixture of hydrogen and methane. The structure of the fabricated films is investigated by using field emission scanning electron microscope (FESEM) and Raman spectroscopy. These nano-carbon films are possessed of good field emission (FE) characteristics with a low threshold field of 2.6\,V/$\mu $m and a high current density of 12.6\,mA/cm$^{2}$ at an electric field of 9\,V/$\mu $m. As the FE currents tend to be saturated in a high $E$ region, no simple Fowler--Nordheim (F--N) model is applicable. A modified F--N model considering statistic effects of FE tip structures and a space-charge-limited-current (SCLC) effect is applied successfully to explaining the FE data observed at low and high electric fields, respectively.
中图分类号: (Insulators)