中国物理B ›› 2008, Vol. 17 ›› Issue (12): 4640-4644.doi: 10.1088/1674-1056/17/12/051

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Dynamics of a pair of electron and hole in semiconductor superlattice under an intense electric field

阎结昀   

  1. Department of Physics, Tsinghua University, Beijing 100084, China
  • 收稿日期:2008-05-26 修回日期:2008-05-29 出版日期:2008-12-20 发布日期:2008-12-20

Dynamics of a pair of electron and hole in semiconductor superlattice under an intense electric field

Yan Jie-Yun (阎结昀)   

  1. Department of Physics, Tsinghua University, Beijing 100084, China
  • Received:2008-05-26 Revised:2008-05-29 Online:2008-12-20 Published:2008-12-20

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摘要： This paper investigates the behavior of a pair of electron and hole in semiconductor superlattice under an external electric field with the consideration of Coulomb interaction. By numerically calculating the corresponding probability in the nearest neighbor tight binding approximation, we find that the single electron (or the hole) can not be dynamically localized due to the Coulomb interaction, while the dynamic localization of exciton (the pair of the electron and hole) still exists. Moreover we find that with the increase of the intensity of electric field, the exciton can be dynamically localized more completely.

Abstract: This paper investigates the behavior of a pair of electron and hole in semiconductor superlattice under an external electric field with the consideration of Coulomb interaction. By numerically calculating the corresponding probability in the nearest neighbor tight binding approximation, we find that the single electron (or the hole) can not be dynamically localized due to the Coulomb interaction, while the dynamic localization of exciton (the pair of the electron and hole) still exists. Moreover we find that with the increase of the intensity of electric field, the exciton can be dynamically localized more completely.

Key words: semiconductor superlattice, dynamic localization, quasi energy

中图分类号:  (Electronic transport in nanoscale materials and structures)

  • 73.63.-b
71.15.Ap (Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)) 73.20.Mf (Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)) 73.23.-b (Electronic transport in mesoscopic systems)