中国物理B ›› 2008, Vol. 17 ›› Issue (11): 4312-4317.doi: 10.1088/1674-1056/17/11/058

• • 上一篇    下一篇

Performance and analytical modelling of halo-doped surrounding gate MOSFETs

李尊朝   

  1. Department of Microelectronics, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China
  • 收稿日期:2008-04-10 修回日期:2008-06-30 出版日期:2008-11-20 发布日期:2008-11-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 10771168), the State Key Development Program for Basic Research of China (Grant No 2005CB321701) and Shaanxi Natural Science Foundation Program of China (Grant No SJ08-ZT13).

Performance and analytical modelling of halo-doped surrounding gate MOSFETs

Li Zun-Chao (李尊朝)   

  1. Department of Microelectronics, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China
  • Received:2008-04-10 Revised:2008-06-30 Online:2008-11-20 Published:2008-11-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 10771168), the State Key Development Program for Basic Research of China (Grant No 2005CB321701) and Shaanxi Natural Science Foundation Program of China (Grant No SJ08-ZT13).

PDF (PC)

684

赞

摘要： Halo structure is added to sub-100\,nm surrounding-gate metal--oxide--semiconductor field- effect-transistors (MOSFETs) to suppress short channel effect. This paper develops the analytical surface potential and threshold voltage models based on the solution of Poisson's equation in fully depleted condition for symmetric halo-doped cylindrical surrounding gate MOSFETs. The performance of the halo-doped device is studied and the validity of the analytical models is verified by comparing the analytical results with the simulated data by three dimensional numerical device simulator Davinci. It shows that the halo doping profile exhibits better performance in suppressing threshold voltage roll-off and drain-induced barrier lowering, and increasing carrier transport efficiency. The derived analytical models are in good agreement with Davinci.

关键词: MOSFET, surrounding gate, compact model, halo

Abstract: Halo structure is added to sub-100 nm surrounding-gate metal--oxide--semiconductor field- effect-transistors (MOSFETs) to suppress short channel effect. This paper develops the analytical surface potential and threshold voltage models based on the solution of Poisson's equation in fully depleted condition for symmetric halo-doped cylindrical surrounding gate MOSFETs. The performance of the halo-doped device is studied and the validity of the analytical models is verified by comparing the analytical results with the simulated data by three dimensional numerical device simulator Davinci. It shows that the halo doping profile exhibits better performance in suppressing threshold voltage roll-off and drain-induced barrier lowering, and increasing carrier transport efficiency. The derived analytical models are in good agreement with Davinci.

Key words: MOSFET, surrounding gate, compact model, halo

中图分类号:  (Field effect devices)

  • 85.30.Tv
85.30.De (Semiconductor-device characterization, design, and modeling)