中国物理B ›› 2006, Vol. 15 ›› Issue (8): 1806-1809.doi: 10.1088/1009-1963/15/8/029

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Characteristics of selective oxidation during the fabrication of vertical cavity surface emitting laser

王立军1, 张永明2, 郝永芹3, 钟景昌3, 马建立3   

  1. (1)Changchun Institute of Optics, Fine Mechanics and Physics,Changchun 130033, China; (2)Material & Engineering College, Shenyang Institute of Chemical Technology, Shenyang 110142, China; (3)National Key Lab of High-Power Semiconductor Lasers,Changchun University of Science and Technology, Changchun 130022, China
  • 收稿日期:2005-12-17 修回日期:2006-02-02 出版日期:2006-08-20 发布日期:2006-08-20

Characteristics of selective oxidation during the fabrication of vertical cavity surface emitting laser

Hao Yong-Qin(郝永芹)a), Zhong Jing-Chang(钟景昌)a), Ma Jian-Li(马建立)a), Zhang Yong-Ming(张永明)b), and Wang Li-Jun(王立军)c)   

  1. a National Key Lab of High-Power Semiconductor Lasers,Changchun University of Science and Technology, Changchun 130022, China; b Material & Engineering College, Shenyang Institute of Chemical Technology, Shenyang 110142, China; c Changchun Institute of Optics, Fine Mechanics and Physics, Changchun 130033, China
  • Received:2005-12-17 Revised:2006-02-02 Online:2006-08-20 Published:2006-08-20

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摘要： Taking into account oxidation temperature, N2 carrier gas flow, and the geometry of the mesa structures this paper investigates the characteristics of selective oxidation during the fabrication of the vertical cavity surface emitting laser (VCSEL) in detail. Results show that the selective oxidation follows a law which differs from any reported in the literature. Below 435℃ selective oxidation of Al0.98Ga0.02As follows a linear growth law for the two mesa structures employed in VCSEL. Above 435℃ approximately increasing parabolic growth is found, which is influenced by the geometry of the mesa structures. Theoretical analysis on the difference between the two structures for the initial oxidation has been performed, which demonstrates that the geometry of the mesa structures does influence on the growth rate of oxide at higher temperatures.

关键词: laser technique, selective oxidation, vertical-cavity surface-emitting laser, quantum-well, semiconductor laser

Abstract: Taking into account oxidation temperature, N2 carrier gas flow, and the geometry of the mesa structures this paper investigates the characteristics of selective oxidation during the fabrication of the vertical cavity surface emitting laser (VCSEL) in detail. Results show that the selective oxidation follows a law which differs from any reported in the literature. Below 435℃ selective oxidation of Al0.98Ga0.02As follows a linear growth law for the two mesa structures employed in VCSEL. Above 435℃ approximately increasing parabolic growth is found, which is influenced by the geometry of the mesa structures. Theoretical analysis on the difference between the two structures for the initial oxidation has been performed, which demonstrates that the geometry of the mesa structures does influence on the growth rate of oxide at higher temperatures.

Key words: laser technique, selective oxidation, vertical-cavity surface-emitting laser, quantum-well, semiconductor laser

中图分类号:  (Semiconductor lasers; laser diodes)

  • 42.55.Px
42.60.Da (Resonators, cavities, amplifiers, arrays, and rings) 42.60.Jf (Beam characteristics: profile, intensity, and power; spatial pattern formation) 81.65.Mq (Oxidation)