中国物理B ›› 2006, Vol. 15 ›› Issue (6): 1310-1314.doi: 10.1088/1009-1963/15/6/029

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Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon

骆文生1, 吴渊1, 付国柱1, 马凯1, 邵喜斌2, 廖燕平3, 荆海4, 郜峰利5   

  1. (1)Chang Chun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, North Liquid Crystal Engineering Research and Development Center, Changchun 130031, China; (2)Chang Chun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, North Liquid Crystal Engineering Research and Development Center, Changchun 130031, China; Jilin North Cai Jing Digital Electron Limited Corporation,Changchun 130031; (3)Chang Chun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, North Liquid Crystal Engineering Research and Development Center, Changchun 130031, China;Graduate School of Chinese Academy of Sciences, Beijing 100049, China; (4)Chang Chun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, North Liquid Crystal Engineering Research and Development Center, Changchun 130031, China;Jilin North Cai Jing Digital Electron Limited Corporation,Changchun 130031,; (5)College of Electronic Science and Engineering, Jilin University,Changchun 130023, China
  • 收稿日期:2005-09-07 修回日期:2006-03-06 出版日期:2006-06-20 发布日期:2006-06-20
  • 基金资助:
    Project supported by the National High Technology Development Program of China (Grant No 2002AA303250) and by the National Natural Science Foundation of China (Grant No 60576056).

Nickel-disilicide-assisted excimer laser crystallization of amorphous silicon

Liao Yan-Ping (廖燕平)ab, Shao Xi-Bin (邵喜斌)ac, Gao Feng-Li (郜峰利)d, Luo Wen-Sheng (骆文生)a, Wu Yuan (吴渊)a, Fu Guo-Zhu (付国柱)a, Jing Hai (荆海)ac, Ma Kai (马凯)a   

  1. a Chang Chun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, North Liquid Crystal Engineering Research and Development Center, Changchun 130031, China; b Graduate School of Chinese Academy of Sciences, Beijing 100049, China; c Jilin North Cai Jing Digital Electron Limited Corporation, Changchun 130031, China; d College of Electronic Science and Engineering, Jilin University, Changchun 130023, China
  • Received:2005-09-07 Revised:2006-03-06 Online:2006-06-20 Published:2006-06-20
  • Supported by:
    Project supported by the National High Technology Development Program of China (Grant No 2002AA303250) and by the National Natural Science Foundation of China (Grant No 60576056).

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摘要： Polycrystalline silicon (poly-Si) thin film has been prepared by means of nickel-disilicide (NiSi$_{2})$ assisted excimer laser crystallization (ELC). The process to prepare a sample includes two steps. One step consists of the formation of NiSi$_{2}$ precipitates by heat-treating the dehydrogenated amorphous silicon (a-Si) coated with a thin layer of Ni. And the other step consists of the formation of poly-Si grains by means of ELC. According to the test results of scanning electron microscopy (SEM), another grain growth model named two-interface grain growth has been proposed to contrast with the conventional Ni-metal-induced lateral crystallization (Ni-MILC) model and the ELC model. That is, an additional grain growth interface other than that in conventional ELC is formed, which consists of NiSi$_{2}$ precipitates and a-Si. The processes for grain growth according to various excimer laser energy densities delivered to the a-Si film have been discussed. It is discovered that grains with needle shape and most of a uniform orientation are formed which grow up with NiSi$_{2}$ precipitates as seeds. The reason for the formation of such grains which are different from that of Ni-MILC without migration of Ni atoms is not clear. Our model and analysis point out a method to prepare grains with needle shape and mostly of a uniform orientation. If such grains are utilized to make thin-film transistor, its characteristics may be improved.

关键词: polycrystalline silicon, excimer laser crystallization, Ni-disilicide, Ni-metal-induced lateral crystallization, two-interface grain growth

Abstract: Polycrystalline silicon (poly-Si) thin film has been prepared by means of nickel-disilicide (NiSi$_{2})$ assisted excimer laser crystallization (ELC). The process to prepare a sample includes two steps. One step consists of the formation of NiSi$_{2}$ precipitates by heat-treating the dehydrogenated amorphous silicon (a-Si) coated with a thin layer of Ni. And the other step consists of the formation of poly-Si grains by means of ELC. According to the test results of scanning electron microscopy (SEM), another grain growth model named two-interface grain growth has been proposed to contrast with the conventional Ni-metal-induced lateral crystallization (Ni-MILC) model and the ELC model. That is, an additional grain growth interface other than that in conventional ELC is formed, which consists of NiSi$_{2}$ precipitates and a-Si. The processes for grain growth according to various excimer laser energy densities delivered to the a-Si film have been discussed. It is discovered that grains with needle shape and most of a uniform orientation are formed which grow up with NiSi$_{2}$ precipitates as seeds. The reason for the formation of such grains which are different from that of Ni-MILC without migration of Ni atoms is not clear. Our model and analysis point out a method to prepare grains with needle shape and mostly of a uniform orientation. If such grains are utilized to make thin-film transistor, its characteristics may be improved.

Key words: polycrystalline silicon, excimer laser crystallization, Ni-disilicide, Ni-metal-induced lateral crystallization, two-interface grain growth

中图分类号:  (Nucleation and growth)

  • 68.55.A-
68.37.Hk (Scanning electron microscopy (SEM) (including EBIC)) 68.55.-a (Thin film structure and morphology) 78.30.Am (Elemental semiconductors and insulators) 81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy)