中国物理B ›› 2008, Vol. 17 ›› Issue (4): 1415-1420.doi: 10.1088/1674-1056/17/4/044

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Dynamic Ni gettered by PSG from S-MIC poly-Si and its TFTs

王文1, 郭海诚1, 孟志国2, 李阳2, 吴春亚2, 赵淑芸2, 李娟2, 熊绍珍2   

  1. (1)Department of electronic and computer engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China; (2)Institute of Photo-electronics of Nankai University, Tianjin key laboratory for Photo-electronic thin film devices and Technology, Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Tianjin 300071, China
  • 收稿日期:2007-05-22 修回日期:2007-10-15 出版日期:2008-04-20 发布日期:2008-04-20
  • 基金资助:
    Project supported by the National High Technology Research and Developments Program of China (Grant No 004AA33570), Key Project of National Natural Science Foundation of China (NSFC) (Grant No 60437030) and Tianjin Natural Science Foundation (Grant No 05Y

Dynamic Ni gettered by PSG from S-MIC poly-Si and its TFTs

Meng Zhi-Guo(孟志国)a), Li Yang(李阳)a), Wu Chun-Ya(吴春亚)a), Zhao Shu-Yun(赵淑芸)a), Li Juan(李娟)a), Man Wong(王文)b), Hoi Sing-Kwok(郭海诚)b), and Xiong Shao-Zhen(熊绍珍)a)   

  1. a Institute of Photo-electronics of Nankai University, Tianjin key laboratory for Photo-electronic thin film devices and Technology, Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Tianjin 300071, China; b Department of electronic and computer engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China
  • Received:2007-05-22 Revised:2007-10-15 Online:2008-04-20 Published:2008-04-20
  • Supported by:
    Project supported by the National High Technology Research and Developments Program of China (Grant No 004AA33570), Key Project of National Natural Science Foundation of China (NSFC) (Grant No 60437030) and Tianjin Natural Science Foundation (Grant No 05Y

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摘要： A dynamic phosphor-silicate glass (PSG) gettering method is proposed in which the processes of the gettering of Ni by PSG and the crystallizing of $\al$-Si into poly-Si by Ni take place simultaneously. The effects of PSG gettering process on the performances of solution-based metal induced crystallized (S-MIC) poly-Si materials and their thin film transistors (TFTs) are discussed. The crystallization rate is much reduced due to the fact that the Ni as a medium source of crystallization is extracted by the PSG during crystallization at the same time. The boundary between two neighbouring grains in S-MIC poly-Si with PSG looks blurrier than without PSG. Compared with the TFTs made from S-MIC poly-Si without PSG gettering, the TFTs made with PSG gettering has a reduced gate induced leakage current.

关键词: metal induced crystallization, polycrystalline silicon, nickel gettering, phosphor-silicate glass (PSG)

Abstract: A dynamic phosphor-silicate glass (PSG) gettering method is proposed in which the processes of the gettering of Ni by PSG and the crystallizing of $\alpha$-Si into poly-Si by Ni take place simultaneously. The effects of PSG gettering process on the performances of solution-based metal induced crystallized (S-MIC) poly-Si materials and their thin film transistors (TFTs) are discussed. The crystallization rate is much reduced due to the fact that the Ni as a medium source of crystallization is extracted by the PSG during crystallization at the same time. The boundary between two neighbouring grains in S-MIC poly-Si with PSG looks blurrier than without PSG. Compared with the TFTs made from S-MIC poly-Si without PSG gettering, the TFTs made with PSG gettering has a reduced gate induced leakage current.

Key words: metal induced crystallization, polycrystalline silicon, nickel gettering, phosphor-silicate glass (PSG)

中图分类号:  (Grain and twin boundaries)

  • 61.72.Mm
61.72.Yx (Interaction between different crystal defects; gettering effect) 68.35.B- (Structure of clean surfaces (and surface reconstruction)) 81.65.Tx (Gettering) 85.30.Tv (Field effect devices)