[1] |
You-Ming Liu(刘又铭), Yuan-Kun Shi(史源坤), Ban-Fei Wan(万宝飞), Dan Zhang(张丹), and Hai-Feng Zhang(章海锋). Nonreciprocal wide-angle bidirectional absorber based on one-dimensional magnetized gyromagnetic photonic crystals[J]. 中国物理B, 2023, 32(4): 44203-044203. |
[2] |
Gang Liu(刘刚), Yuanhang Li(李远航), Baonan Jia(贾宝楠), Yongpan Gao(高永潘), Lihong Han(韩利红), Pengfei Lu(芦鹏飞), and Haizhi Song(宋海智). A 3-5 μm broadband YBCO high-temperature superconducting photonic crystal[J]. 中国物理B, 2023, 32(3): 34213-034213. |
[3] |
Xin Jiang(蒋鑫), Chen-Hao Li(李晨浩), Shuo-Xiong Yang(羊硕雄), Jia-Hao Liang(梁家豪), Long-Kun Lai(来龙坤), Qing-Yang Dong(董青杨), Wei Huang(黄威),Xin-Yu Liu(刘新宇), and Wei-Jun Luo(罗卫军). Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate[J]. 中国物理B, 2023, 32(3): 37201-037201. |
[4] |
Jingshu Guo(郭静姝), Jiejie Zhu(祝杰杰), Siyu Liu(刘思雨), Jielong Liu(刘捷龙), Jiahao Xu(徐佳豪), Weiwei Chen(陈伟伟), Yuwei Zhou(周雨威), Xu Zhao(赵旭), Minhan Mi(宓珉瀚), Mei Yang(杨眉), Xiaohua Ma(马晓华), and Yue Hao(郝跃). Low-resistance ohmic contacts on InAlN/GaN heterostructures with MOCVD-regrown n+-InGaN and mask-free regrowth process[J]. 中国物理B, 2023, 32(3): 37303-037303. |
[5] |
Zhen-Zhuo Zhang(张臻琢), Jing Yang(杨静), De-Gang Zhao(赵德刚), Feng Liang(梁锋), Ping Chen(陈平), and Zong-Shun Liu(刘宗顺). Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on (111) Si[J]. 中国物理B, 2023, 32(2): 28101-028101. |
[6] |
Lijian Guo(郭力健), Weizong Xu(徐尉宗), Qi Wei(位祺), Xinghua Liu(刘兴华), Tianyi Li(李天义), Dong Zhou(周东), Fangfang Ren(任芳芳), Dunjun Chen(陈敦军), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海). Demonstration and modeling of unipolar-carrier-conduction GaN Schottky-pn junction diode with low turn-on voltage[J]. 中国物理B, 2023, 32(2): 27302-027302. |
[7] |
Zeng Liu(刘增), Ling Du(都灵), Shao-Hui Zhang(张少辉), Ang Bian(边昂), Jun-Peng Fang(方君鹏), Chen-Yang Xing(邢晨阳), Shan Li(李山), Jin-Cheng Tang(汤谨诚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华). Achieving highly-efficient H2S gas sensor by flower-like SnO2-SnO/porous GaN heterojunction[J]. 中国物理B, 2023, 32(2): 20701-020701. |
[8] |
Lianzhen Zhang(张连震), Xuedian Zhang(张学典), Xiantong Yu(俞宪同), Xuejing Liu(刘学静), Jun Zhou(周军), Min Chang(常敏), Na Yang(杨娜), and Jia Du(杜嘉). Multi-band polarization switch based on magnetic fluid filled dual-core photonic crystal fiber[J]. 中国物理B, 2023, 32(2): 24205-024205. |
[9] |
Yuhui Dong(董宇辉), Danni Yan(严丹妮), Shuai Yang(杨帅), Naiwei Wei(魏乃炜),Yousheng Zou(邹友生), and Haibo Zeng(曾海波). Ion migration in metal halide perovskite QLEDs and its inhibition[J]. 中国物理B, 2023, 32(1): 18507-018507. |
[10] |
Yao-Pu Lang(郎垚璞), Qing-Gang Liu(刘庆纲), Qi Wang(王奇), Xing-Lin Zhou(周兴林), and Guang-Yi Jia(贾光一). Method of measuring one-dimensional photonic crystal period-structure-film thickness based on Bloch surface wave enhanced Goos-Hänchen shift[J]. 中国物理B, 2023, 32(1): 17802-017802. |
[11] |
Kuiyuan Tian(田魁元), Yong Liu(刘勇), Jiangfeng Du(杜江锋), and Qi Yu(于奇). Design optimization of high breakdown voltage vertical GaN junction barrier Schottky diode with high-K/low-K compound dielectric structure[J]. 中国物理B, 2023, 32(1): 17306-017306. |
[12] |
Zhaoxia Bi(毕朝霞), Anders Gustafsson, and Lars Samuelson. Bottom-up approaches to microLEDs emitting red, green and blue light based on GaN nanowires and relaxed InGaN platelets[J]. 中国物理B, 2023, 32(1): 18103-018103. |
[13] |
Cheng-Yu Huang(黄成玉), Jin-Yan Wang(王金延), Bin Zhang(张斌), Zhen Fu(付振), Fang Liu(刘芳), Mao-Jun Wang(王茂俊), Meng-Jun Li(李梦军), Xin Wang(王鑫), Chen Wang(汪晨), Jia-Yin He(何佳音), and Yan-Dong He(何燕冬). Physical analysis of normally-off ALD Al2O3/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique[J]. 中国物理B, 2022, 31(9): 97401-097401. |
[14] |
Jieru Xu(许洁茹), Qiuchen Wang(王秋辰), Wenlin Yan(闫汶琳), Liquan Chen(陈立泉), Hong Li(李泓), and Fan Wu(吴凡). Liquid-phase synthesis of Li2S and Li3PS4 with lithium-based organic solutions[J]. 中国物理B, 2022, 31(9): 98203-098203. |
[15] |
Zeng-Ping Su(苏增平), Tong-Tong Wei(魏彤彤), and Yue-Ke Wang(王跃科). Dual-channel tunable near-infrared absorption enhancement with graphene induced by coupled modes of topological interface states[J]. 中国物理B, 2022, 31(8): 87804-087804. |