中国物理B ›› 2006, Vol. 15 ›› Issue (4): 702-707.doi: 10.1088/1009-1963/15/4/009

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Effects of the microstructure slab with pillars on light extraction of GaN light-emitting diode

刘颂豪1, 郑瑞生2, 冯玉春2, 牛憨笨2, 李岩3   

  1. (1)College of Optoelectronic Information of South China Normal University, Guangzhou 510631, China; (2)Key Laboratory of Optoelectronic Devices and Systems (Shenzhen University), Ministry of Education, Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China; (3)Key Laboratory of Optoelectronic Devices and Systems (Shenzhen University), Ministry of Education, Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China;College of Optoelectronic Information of South China Normal University, Guangzhou
  • 收稿日期:2005-09-09 修回日期:2005-11-30 出版日期:2006-04-20 发布日期:2006-04-20
  • 基金资助:
    Project supported by the Program of the National Natural Science Foundation of China (Grant No 60376003), the Guangdong Province's Keystone Breakthrough Program (Grant No ZB2003A07) and the Shenzhen Science and Technology Program (Grant No 2002-K1-65).

Effects of the microstructure slab with pillars on light extraction of GaN light-emitting diode

Li Yan (李岩)ab, Zheng Rui-Sheng (郑瑞生)a, Feng Yu-Chun (冯玉春)a, Liu Song-Hao (刘颂豪)b, Niu Han-Ben (牛憨笨)a   

  1. a Key Laboratory of Optoelectronic Devices and Systems (Shenzhen University), Ministry of Education, Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China; b College of Optoelectronic Information of South China Normal University, Guangzhou 510631, China
  • Received:2005-09-09 Revised:2005-11-30 Online:2006-04-20 Published:2006-04-20
  • Supported by:
    Project supported by the Program of the National Natural Science Foundation of China (Grant No 60376003), the Guangdong Province's Keystone Breakthrough Program (Grant No ZB2003A07) and the Shenzhen Science and Technology Program (Grant No 2002-K1-65).

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摘要： The positive z direction relative light extraction efficiency of GaN light-emitting diodes with microstructure slab is calculated by three-dimensional finite-difference time-domain method, where the microstructure slab consists of a graphite lattice of pillars. The results show that the two-dimensional graphite-arranged pillars suppress light extraction. When there is a thick pillar in the middle of the pillars, the structure can enhance light extraction of the light-emitting diodes. The tower-like pillars, which are thin on the top of the pillars and thick on the bottom of the pillars, benefit the light extraction when the angle of the tower-like pillars is proper.

关键词: photonic crystal, light-emitting diodes, GaN

Abstract: The positive z direction relative light extraction efficiency of GaN light-emitting diodes with microstructure slab is calculated by three-dimensional finite-difference time-domain method, where the microstructure slab consists of a graphite lattice of pillars. The results show that the two-dimensional graphite-arranged pillars suppress light extraction. When there is a thick pillar in the middle of the pillars, the structure can enhance light extraction of the light-emitting diodes. The tower-like pillars, which are thin on the top of the pillars and thick on the bottom of the pillars, benefit the light extraction when the angle of the tower-like pillars is proper.

Key words: photonic crystal, light-emitting diodes, GaN

中图分类号:  (Light-emitting devices)

  • 85.60.Jb
02.70.Bf (Finite-difference methods) 78.66.-w (Optical properties of specific thin films)