[1] |
Yuankang Chen(陈远康), Yuanliang Zhou(周远良), Jie Jiang(蒋杰), Tingke Rao(饶庭柯), Wugang Liao(廖武刚), and Junjie Liu(刘俊杰). Enhancement of holding voltage by a modified low-voltage trigger silicon-controlled rectifier structure for electrostatic discharge protection[J]. 中国物理B, 2023, 32(2): 28502-028502. |
[2] |
Hong Zhang(张鸿), Hongxia Guo(郭红霞), Zhifeng Lei(雷志锋), Chao Peng(彭超), Zhangang Zhang(张战刚), Ziwen Chen(陈资文), Changhao Sun(孙常皓), Yujuan He(何玉娟), Fengqi Zhang(张凤祁), Xiaoyu Pan(潘霄宇), Xiangli Zhong(钟向丽), and Xiaoping Ouyang(欧阳晓平). Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation[J]. 中国物理B, 2023, 32(2): 28504-028504. |
[3] |
Zi-Hao Chen(陈子豪), Yong-Sheng Wang(王永胜), Ning Zhang(张宁), Bin Zhou(周兵), Jie Gao(高洁), Yan-Xia Wu(吴艳霞), Yong Ma(马永), Hong-Jun Hei(黑鸿君), Yan-Yan Shen(申艳艳), Zhi-Yong He(贺志勇), and Sheng-Wang Yu(于盛旺). Effects of preparation parameters on growth and properties of β-Ga2O3 film[J]. 中国物理B, 2023, 32(1): 17301-017301. |
[4] |
Xiufang Yang(杨秀芳), Shengsheng Zhao(赵生盛), Qian Huang(黄茜), Cao Yu(郁超), Jiakai Zhou(周佳凯), Xiaoning Liu(柳晓宁), Xianglin Su(苏祥林),Ying Zhao(赵颖), and Guofu Hou(侯国付). Sub-stochiometric MoOx by radio-frequency magnetron sputtering as hole-selective passivating contacts for silicon heterojunction solar cells[J]. 中国物理B, 2022, 31(9): 98401-098401. |
[5] |
Xinxin Zuo(左欣欣), Jiang Lu(陆江), Xiaoli Tian(田晓丽), Yun Bai(白云), Guodong Cheng(成国栋), Hong Chen(陈宏), Yidan Tang(汤益丹), Chengyue Yang(杨成樾), and Xinyu Liu(刘新宇). Improvement on short-circuit ability of SiC super-junction MOSFET with partially widened pillar structure[J]. 中国物理B, 2022, 31(9): 98502-098502. |
[6] |
Le Wang(王乐), Zhao-Xuan Jing(荆照轩), Ao-Ran Zhou(周傲然), and Shan-Dong Li(李山东). Ru thickness-dependent interlayer coupling and ultrahigh FMR frequency in FeCoB/Ru/FeCoB sandwich trilayers[J]. 中国物理B, 2022, 31(8): 86201-086201. |
[7] |
Zhong-Xue Huang(黄忠学), Rui Wang(王瑞), Xin Yang(杨鑫), Hao-Feng Chen(陈浩锋), and Li-Xin Cao(曹立新). Magnetic properties of oxides and silicon single crystals[J]. 中国物理B, 2022, 31(8): 87501-087501. |
[8] |
Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲). A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance[J]. 中国物理B, 2022, 31(7): 78501-078501. |
[9] |
Min Huang(黄敏), Yan-Song Liu(刘艳松), Zhi-Bing He(何智兵), and Yong Yi(易勇). Structure, phase evolution and properties of Ta films deposited using hybrid high-power pulsed and DC magnetron co-sputtering[J]. 中国物理B, 2022, 31(6): 66101-066101. |
[10] |
Dawei Ye(叶大为), Fang Ding(丁芳), Kedong Li(李克栋), Zhenhua Hu(胡振华), Ling Zhang(张凌), Xiahua Chen(陈夏华), Qing Zhang(张青), Pingan Zhao(赵平安), Tao He(贺涛), Lingyi Meng(孟令义), Kaixuan Ye(叶凯萱), Fubin Zhong(钟富彬), Yanmin Duan(段艳敏), Rui Ding(丁锐), Liang Wang(王亮), Guosheng Xu(徐国盛), Guangnan Luo(罗广南), and EAST team. Experimental investigation on divertor tungsten sputtering with neon seeding in ELMy H-mode plasma in EAST tokamak[J]. 中国物理B, 2022, 31(6): 65201-065201. |
[11] |
Yuanchao Huang(黄渊超), Rong Wang(王蓉), Yiqiang Zhang(张懿强), Deren Yang(杨德仁), and Xiaodong Pi(皮孝东). Assessing the effect of hydrogen on the electronic properties of 4H-SiC[J]. 中国物理B, 2022, 31(5): 56108-056108. |
[12] |
Shuyao Chen(陈姝瑶), Yunfei Xie(谢云飞), Yucong Yang(杨玉聪), Dong Gao(高栋), Donghua Liu(刘冬华), Lin Qin(秦林), Wei Yan(严巍), Bi Tan(谭碧), Qiuli Chen(陈秋丽), Tao Gong(龚涛), En Li(李恩), Lei Bi(毕磊), Tao Liu(刘涛), and Longjiang Deng(邓龙江). The 50 nm-thick yttrium iron garnet films with perpendicular magnetic anisotropy[J]. 中国物理B, 2022, 31(4): 48503-048503. |
[13] |
Hang-Hang Wang(王行行), Wen-Qi Lu(陆文琪), Jiao Zhang(张娇), and Jun Xu(徐军). Comparative study of high temperature anti-oxidation property of sputtering deposited stoichiometric and Si-rich SiC films[J]. 中国物理B, 2022, 31(4): 48103-048103. |
[14] |
Shao-Yang Li(李绍洋), Liang-Liang Wang(王亮亮), Dan Wu(吴丹), Jin You(游金), Yue Wang(王玥), Jia-Shun Zhang(张家顺), Xiao-Jie Yin(尹小杰), Jun-Ming An(安俊明), and Yuan-Da Wu(吴远大). High efficiency, small size, and large bandwidth vertical interlayer waveguide coupler[J]. 中国物理B, 2022, 31(2): 24203-024203. |
[15] |
Xin-Chao Yang(杨鑫超), Qun Wei(魏群), Mei-Guang Zhang(张美光), Ming-Wei Hu(胡明玮), Lin-Qian Li(李林茜), and Xuan-Min Zhu(朱轩民). A new direct band gap silicon allotrope o-Si32[J]. 中国物理B, 2022, 31(2): 26104-026104. |