中国物理B ›› 2004, Vol. 13 ›› Issue (7): 1100-1103.doi: 10.1088/1009-1963/13/7/023

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Analytical model of electron transport characteristics for 4H-SiC material and devices

吕红亮, 张义门, 张玉明   

  1. Microelectronics Institute, Xidian University, Xi'an 710071, China
  • 收稿日期:2003-10-08 修回日期:2003-12-26 出版日期:2005-07-05 发布日期:2005-07-05
  • 基金资助:
    Project supported by the National Key Basic Research Special Foundation of China (Grant No 2002CB311904) and by the National Defence Pre-research Foundation of China (Grant No 41308060107).

Analytical model of electron transport characteristics for 4H-SiC material and devices

Lü Hong-Liang (吕红亮), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明)   

  1. Microelectronics Institute, Xidian University, Xi'an 710071, China
  • Received:2003-10-08 Revised:2003-12-26 Online:2005-07-05 Published:2005-07-05
  • Supported by:
    Project supported by the National Key Basic Research Special Foundation of China (Grant No 2002CB311904) and by the National Defence Pre-research Foundation of China (Grant No 41308060107).

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摘要： Based on 4H-SiC material parameters, three different analytical expressions are used to characterize the electron mobility as the function of electric field. The first model is based on simple saturation of the steady-state drift velocity with electric field (conventional three-parameter model for silicon). The second GaAs-based mobility model partially reflects the peak velocity in high electric fields. The third multi-parameter model proposed in this paper is more realistic since it well reproduces the drift velocity－field characteristics obtained by Monte Carlo calculations, revealing the peak drift velocity with subsequent saturation at higher electric fields. Thus, the drift velocity model presented in this paper is much better for device simulation. In this paper, the influence of mobility model on DC characteristics of 4H-SiC MESFET is calculated and the better accordance with the experimental results is presented with multi-parameter model.

Abstract: Based on 4H-SiC material parameters, three different analytical expressions are used to characterize the electron mobility as the function of electric field. The first model is based on simple saturation of the steady-state drift velocity with electric field (conventional three-parameter model for silicon). The second GaAs-based mobility model partially reflects the peak velocity in high electric fields. The third multi-parameter model proposed in this paper is more realistic since it well reproduces the drift velocity－field characteristics obtained by Monte Carlo calculations, revealing the peak drift velocity with subsequent saturation at higher electric fields. Thus, the drift velocity model presented in this paper is much better for device simulation. In this paper, the influence of mobility model on DC characteristics of 4H-SiC MESFET is calculated and the better accordance with the experimental results is presented with multi-parameter model.

Key words: SiC, mobility, velocity－field characteristics, MESFET

中图分类号:  (Other crystalline inorganic semiconductors)

  • 72.80.Jc
85.30.De (Semiconductor-device characterization, design, and modeling) 72.20.Fr (Low-field transport and mobility; piezoresistance) 85.30.Tv (Field effect devices)