中国物理B ›› 2004, Vol. 13 ›› Issue (7): 1100-1103.doi: 10.1088/1009-1963/13/7/023
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
吕红亮, 张义门, 张玉明
Lü Hong-Liang (吕红亮), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明)
摘要: Based on 4H-SiC material parameters, three different analytical expressions are used to characterize the electron mobility as the function of electric field. The first model is based on simple saturation of the steady-state drift velocity with electric field (conventional three-parameter model for silicon). The second GaAs-based mobility model partially reflects the peak velocity in high electric fields. The third multi-parameter model proposed in this paper is more realistic since it well reproduces the drift velocity-field characteristics obtained by Monte Carlo calculations, revealing the peak drift velocity with subsequent saturation at higher electric fields. Thus, the drift velocity model presented in this paper is much better for device simulation. In this paper, the influence of mobility model on DC characteristics of 4H-SiC MESFET is calculated and the better accordance with the experimental results is presented with multi-parameter model.
中图分类号: (Other crystalline inorganic semiconductors)