中国物理B ›› 2004, Vol. 13 ›› Issue (12): 2141-2146.doi: 10.1088/1009-1963/13/12/029

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Theoretical study of quantum confined Stark shift in InAs/GaAs quantum dots

郭汝海, 时红艳, 孙秀冬   

  1. Department of Applied Physics, Harbin Institute of Technology, Harbin 150001, China
  • 收稿日期:2004-06-01 修回日期:2004-08-04 出版日期:2005-03-17 发布日期:2005-03-17
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 90201003), the Programme from the Ministry of Education for Distinguished Young Teacher and the Foundation of Heilongjiang Province for the Returned Overseas Chinese Scholars

Theoretical study of quantum confined Stark shift in InAs/GaAs quantum dots

Guo Ru-Hai (郭汝海), Shi Hong-Yan (时红艳), Sun Xiu-Dong (孙秀冬)   

  1. Department of Applied Physics, Harbin Institute of Technology, Harbin 150001, China
  • Received:2004-06-01 Revised:2004-08-04 Online:2005-03-17 Published:2005-03-17
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 90201003), the Programme from the Ministry of Education for Distinguished Young Teacher and the Foundation of Heilongjiang Province for the Returned Overseas Chinese Scholars

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摘要： The quantum confined Stark effect (QCSE) of the self-assembled InAs/GaAs quantum dots has been investigated theoretically. The ground-state transition energies for quantum dots in the shape of a cube, pyramid or "truncated pyramid" are calculated and analysed. We use a method based on the Green function technique for calculating the strain in quantum dots and an efficient plane-wave envelope-function technique to determine the ground-state electronic structure of them with different shapes. The symmetry of quantum dots is broken by the effect of strain. So the properties of carriers show different behaviours from the traditional quantum device. Based on these results, we also calculate permanent built-in dipole moments and compare them with recent experimental data. Our results demonstrate that the measured Stark effect in self-assembled InAs/GaAs quantum dot structures can be explained by including linear grading.

Abstract: The quantum confined Stark effect (QCSE) of the self-assembled InAs/GaAs quantum dots has been investigated theoretically. The ground-state transition energies for quantum dots in the shape of a cube, pyramid or "truncated pyramid" are calculated and analysed. We use a method based on the Green function technique for calculating the strain in quantum dots and an efficient plane-wave envelope-function technique to determine the ground-state electronic structure of them with different shapes. The symmetry of quantum dots is broken by the effect of strain. So the properties of carriers show different behaviours from the traditional quantum device. Based on these results, we also calculate permanent built-in dipole moments and compare them with recent experimental data. Our results demonstrate that the measured Stark effect in self-assembled InAs/GaAs quantum dot structures can be explained by including linear grading.

Key words: quantum dots, plane-wave expansion, self-assembled, quantum confined Stark effect

中图分类号:  (Quantum dots)

  • 78.67.Hc
71.15.Ap (Basis sets (LCAO, plane-wave, APW, etc.) and related methodology (scattering methods, ASA, linearized methods, etc.)) 73.21.La (Quantum dots)