中国物理B ›› 2004, Vol. 13 ›› Issue (1): 82-84.doi: 10.1088/1009-1963/13/1/015
冯克成1, 李超1, 袁宏韬2, 王学进3, 何琛娟3, 聂玉昕3
Yuan Hong-Tao (袁宏韬)ab, Feng Ke-Cheng (冯克成)a, Wang Xue-Jin (王学进)b, Li Chao (李超)a, He Chen-Juan (何琛娟)b, Nie Yu-Xin (聂玉昕)b
摘要: We report on Raman scattering of VO_2 films prepared by radio frequency magnetron sputtering under different conditions. Our investigations revealed that the dominated Raman peaks shift towards high frequency for both V-rich and O-rich VO_2 films, compared with the stoichiometry VO_2 films. The experimental evidence is presented and the cause for nonstoichiometry dependence of Raman spectra of VO_2 films is discussed.
中图分类号: (Other semiconductors)