Effect of nonstoichiometry on Raman scattering of VO2 films

doi:10.1088/1009-1963/13/1/015

中国物理B ›› 2004, Vol. 13 ›› Issue (1): 82-84.doi: 10.1088/1009-1963/13/1/015

Effect of nonstoichiometry on Raman scattering of VO₂ films

冯克成¹, 李超¹, 袁宏韬², 王学进³, 何琛娟³, 聂玉昕³

(1)Changchun University of Science and Technology, Changchun 130022, China; (2)Changchun University of Science and Technology, Changchun 130022, China; Institute of Physics ,Chinese Academy of Sciences, Beijing 100080, China; (3)Institute of Physics ,Chinese Academy of Sciences, Beijing 100080, China

收稿日期:2003-06-04 修回日期:2003-09-11 出版日期:2004-01-22 发布日期:2007-03-22
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No 50072045), and the Foundation of Center for Condensed Matter Physics.

Effect of nonstoichiometry on Raman scattering of VO₂ films

Yuan Hong-Tao (袁宏韬)^ab, Feng Ke-Cheng (冯克成)^a, Wang Xue-Jin (王学进)^b, Li Chao (李超)^a, He Chen-Juan (何琛娟)^b, Nie Yu-Xin (聂玉昕)^b

^a Changchun University of Science and Technology, Changchun 130022, China; ^b Institute of Physics ,Chinese Academy of Sciences, Beijing 100080, China

Received:2003-06-04 Revised:2003-09-11 Online:2004-01-22 Published:2007-03-22
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No 50072045), and the Foundation of Center for Condensed Matter Physics.

摘要/Abstract

摘要： We report on Raman scattering of VO_2 films prepared by radio frequency magnetron sputtering under different conditions. Our investigations revealed that the dominated Raman peaks shift towards high frequency for both V-rich and O-rich VO_2 films, compared with the stoichiometry VO_2 films. The experimental evidence is presented and the cause for nonstoichiometry dependence of Raman spectra of VO_2 films is discussed.

关键词: vanadium dioxide thin films, Raman spectra, nonstoichiometry, RF magnetron sputtering

Abstract: We report on Raman scattering of VO$_2$ films prepared by radio frequency magnetron sputtering under different conditions. Our investigations revealed that the dominated Raman peaks shift towards high frequency for both V-rich and O-rich VO$_2$ films, compared with the stoichiometry VO$_2$ films. The experimental evidence is presented and the cause for nonstoichiometry dependence of Raman spectra of VO$_2$ films is discussed.

Key words: vanadium dioxide thin films, Raman spectra, nonstoichiometry, RF magnetron sputtering

中图分类号: (Other semiconductors)

78.66.Li

78.30.Hv (Other nonmetallic inorganics) 68.55.Nq (Composition and phase identification)

袁宏韬, 冯克成, 王学进, 李超, 何琛娟, 聂玉昕. Effect of nonstoichiometry on Raman scattering of VO₂ films[J]. 中国物理B, 2004, 13(1): 82-84.

Yuan Hong-Tao (袁宏韬), Feng Ke-Cheng (冯克成), Wang Xue-Jin (王学进), Li Chao (李超), He Chen-Juan (何琛娟), Nie Yu-Xin (聂玉昕). Effect of nonstoichiometry on Raman scattering of VO₂ films[J]. Chinese Physics, 2004, 13(1): 82-84.

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Effect of nonstoichiometry on Raman scattering of VO₂ films

Effect of nonstoichiometry on Raman scattering of VO₂ films

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