Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition

doi:10.1088/1674-1056/23/9/096803

›› 2014, Vol. 23 ›› Issue (9): 96803-096803.doi: 10.1088/1674-1056/23/9/096803

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Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition

杨贺, 申承民, 田园, 王高强, 林少雄, 张一, 顾长志, 李俊杰, 高鸿钧

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2014-04-23 修回日期:2014-05-06 出版日期:2014-09-15 发布日期:2014-09-15
基金资助:
Project supported by the National Basic Research Program of China (Grant Nos. 2013CB933604, 2010CB923004, and 2009CB929103), the National Natural Science Foundation of China, and the Chinese Academy of Sciences.

Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition

Yang He (杨贺), Shen Cheng-Min (申承民), Tian Yuan (田园), Wang Gao-Qiang (王高强), Lin Shao-Xiong (林少雄), Zhang Yi (张一), Gu Chang-Zhi (顾长志), Li Jun-Jie (李俊杰), Gao Hong-Jun (高鸿钧)

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2014-04-23 Revised:2014-05-06 Online:2014-09-15 Published:2014-09-15
Contact: Gao Hong-Jun E-mail:hjgao@iphy.ac.cn
Supported by:
Project supported by the National Basic Research Program of China (Grant Nos. 2013CB933604, 2010CB923004, and 2009CB929103), the National Natural Science Foundation of China, and the Chinese Academy of Sciences.

摘要/Abstract

摘要： Large-area monolayer graphene samples grown on polycrystalline copper foil by thermal chemical vapor deposition with differing CH₄ flux and growth time are investigated by Raman spectra, scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. The defects, number of layers, and quality of graphene are shown to be controllable through tuning the reaction conditions: ideally to 2-3 sccm CH₄ for 30 minutes.

关键词: graphene, chemical vapor deposition, Raman spectra

Abstract: Large-area monolayer graphene samples grown on polycrystalline copper foil by thermal chemical vapor deposition with differing CH₄ flux and growth time are investigated by Raman spectra, scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. The defects, number of layers, and quality of graphene are shown to be controllable through tuning the reaction conditions: ideally to 2-3 sccm CH₄ for 30 minutes.

Key words: graphene, chemical vapor deposition, Raman spectra

中图分类号: (Graphene films)

68.65.Pq

81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 78.30.-j (Infrared and Raman spectra)

杨贺, 申承民, 田园, 王高强, 林少雄, 张一, 顾长志, 李俊杰, 高鸿钧. Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition[J]. , 2014, 23(9): 96803-096803.

Yang He (杨贺), Shen Cheng-Min (申承民), Tian Yuan (田园), Wang Gao-Qiang (王高强), Lin Shao-Xiong (林少雄), Zhang Yi (张一), Gu Chang-Zhi (顾长志), Li Jun-Jie (李俊杰), Gao Hong-Jun (高鸿钧). Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition[J]. Chin. Phys. B, 2014, 23(9): 96803-096803.

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Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition

Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition

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