中国物理B ›› 2019, Vol. 28 ›› Issue (2): 27401-027401.doi: 10.1088/1674-1056/28/2/027401

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Low-energy (40 keV) proton irradiation of YBa2Cu3O7-x thin films:Micro-Raman characterization and electrical transport properties

San-Sheng Wang(王三胜), Fang Li(李方), Han Wu(吴晗), Yu Zhang(张玉), Suleman Muḥammad(穆罕默德苏尔曼), Peng Zhao(赵鹏), Xiao-Yun Le(乐小云), Zhi-Song Xiao(肖志松), Li-Xiang Jiang(姜利祥), Xue-Dong Ou(欧学东), Xiao-Ping Ouyang(欧阳晓平)   

  1. 1 Key Laboratory of Micro-nano Measurement, Manipulation and Physics, Ministry of Education, Beihang University, Beijing 100191, China;
    2 Beijing Institute of Spacecraft Engineering Environment, Beijing 100094, China
  • 收稿日期:2018-08-31 修回日期:2018-11-23 出版日期:2019-02-05 发布日期:2019-02-05
  • 通讯作者: San-Sheng Wang E-mail:wangssh@buaa.edu.cn
  • 基金资助:

    Project supported by the National Natural Science Foundation of China (Grant No. 61473023), the Aerospace Science and Technology Innovation Fund, CASC and International S & T Cooperation Program of China (ISTCP) (Grant No. 2015DFR80190).

Low-energy (40 keV) proton irradiation of YBa2Cu3O7-x thin films:Micro-Raman characterization and electrical transport properties

San-Sheng Wang(王三胜)1, Fang Li(李方)1, Han Wu(吴晗)1, Yu Zhang(张玉)1, Suleman Muḥammad(穆罕默德苏尔曼)1, Peng Zhao(赵鹏)1, Xiao-Yun Le(乐小云)1, Zhi-Song Xiao(肖志松)1, Li-Xiang Jiang(姜利祥)2, Xue-Dong Ou(欧学东)2, Xiao-Ping Ouyang(欧阳晓平)1,2   

  1. 1 Key Laboratory of Micro-nano Measurement, Manipulation and Physics, Ministry of Education, Beihang University, Beijing 100191, China;
    2 Beijing Institute of Spacecraft Engineering Environment, Beijing 100094, China
  • Received:2018-08-31 Revised:2018-11-23 Online:2019-02-05 Published:2019-02-05
  • Contact: San-Sheng Wang E-mail:wangssh@buaa.edu.cn
  • Supported by:

    Project supported by the National Natural Science Foundation of China (Grant No. 61473023), the Aerospace Science and Technology Innovation Fund, CASC and International S & T Cooperation Program of China (ISTCP) (Grant No. 2015DFR80190).

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摘要：

To investigate the damage profiles of high-fluence low-energy proton irradiation on superconducting materials and related devices, Raman characterization and electrical transport measurement of 40-keV-proton irradiated YBa2Cu3O7-x (YBCO) thin films are carried out. From micro-Raman spectroscopy and x-ray diffraction studies, the main component of proton-radiation-induced defects is found to be the partial transition of superconducting orthorhombic phase to the semiconducting tetragonal phase and non-superconducting secondary phase. The results indicate that the defects induced in the conducting CuO2 planes, such as increased oxygen vacancies and interstitials, can result in an increase in the resistivity but a decrease in the transition temperature TC with the increase in the fluence of proton irradiation, which is confirmed in the electrical transport measurements. Especially, zero-resistance temperature TC0 is not observed at a fluence of 1015 p/cm2. Furthermore, the variation of activation energy U0 can be explained by the plastic-flux creep theory, which indicates that the plastic deformation and entanglement of vortices in a weakly pinned vortex liquid are caused by disorders of point-like defects. Point-like disorders are demonstrated to be the main contribution to the low-energy proton radiation damage in YBCO thin films. These disorders are likely to cause flux creep by thermally assisted flux flow, which may increase noise and reduce the precision of superconducting devices.

关键词: superconductors, proton radiation, micro-Raman spectra, electrical transport

Abstract:

To investigate the damage profiles of high-fluence low-energy proton irradiation on superconducting materials and related devices, Raman characterization and electrical transport measurement of 40-keV-proton irradiated YBa2Cu3O7-x (YBCO) thin films are carried out. From micro-Raman spectroscopy and x-ray diffraction studies, the main component of proton-radiation-induced defects is found to be the partial transition of superconducting orthorhombic phase to the semiconducting tetragonal phase and non-superconducting secondary phase. The results indicate that the defects induced in the conducting CuO2 planes, such as increased oxygen vacancies and interstitials, can result in an increase in the resistivity but a decrease in the transition temperature TC with the increase in the fluence of proton irradiation, which is confirmed in the electrical transport measurements. Especially, zero-resistance temperature TC0 is not observed at a fluence of 1015 p/cm2. Furthermore, the variation of activation energy U0 can be explained by the plastic-flux creep theory, which indicates that the plastic deformation and entanglement of vortices in a weakly pinned vortex liquid are caused by disorders of point-like defects. Point-like disorders are demonstrated to be the main contribution to the low-energy proton radiation damage in YBCO thin films. These disorders are likely to cause flux creep by thermally assisted flux flow, which may increase noise and reduce the precision of superconducting devices.

Key words: superconductors, proton radiation, micro-Raman spectra, electrical transport

中图分类号:  (Raman and optical spectroscopy)

  • 74.25.nd
74.62.Bf (Effects of material synthesis, crystal structure, and chemical composition) 74.25.-q (Properties of superconductors) 61.05.C- (X-ray diffraction and scattering)