中国物理B ›› 2002, Vol. 11 ›› Issue (3): 298-301.doi: 10.1088/1009-1963/11/3/319

• • 上一篇    

Nucleation of diamond on silicon wafers using C60 in the hot filament chemical vapour deposition system

周玉清1, 费允杰2, 王学2, 王学进2, 熊艳云2, 冯克安2   

  1. (1)National Laboratory for Superconductivity, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; (2)State Key Laboratory of Surface Physics, Condensed Physics Center, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • 收稿日期:2001-08-31 修回日期:2001-11-14 出版日期:2002-03-13 发布日期:2005-06-13
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 50072045).

Nucleation of diamond on silicon wafers using C60 in the hot filament chemical vapour deposition system

Fei Yun-Jie (费允杰)a, Wang Xue (王学)a, Wang Xue-Jin(王学进)a, Zhou Yu-Qing (周玉清)b, Xiong Yan-Yun (熊艳云)a, Feng Ke-An (冯克安)a   

  1. a  State Key Laboratory of Surface Physics, Condensed Physics Center, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China; b  National Laboratory for Superconductivity, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China
  • Received:2001-08-31 Revised:2001-11-14 Online:2002-03-13 Published:2005-06-13
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 50072045).

PDF (PC)

366

赞

摘要： Scanning electron microscopy and Raman shifts were used to study the process of diamond nucleation and growth using C60 in the hot filament chemical vapour deposition (HFCVD) system. The process of nucleation and growth of diamond films on silicon wafer using C60 as intermediate layer in HFCVD system is described. In order to increase the density of diamond nuclei on the wafers, it is not necessary to use negative bias. The UV-light pre-treatment is not beneficial for improving the diamond nucleation. The multi-layers of C60 molecules, but not a monolayer, can increase the density of diamond nuclei in the presence of H atoms.

关键词: diamond thin films, scanning electron microscopy, C60

Abstract: Scanning electron microscopy and Raman shifts were used to study the process of diamond nucleation and growth using C60 in the hot filament chemical vapour deposition (HFCVD) system. The process of nucleation and growth of diamond films on silicon wafer using C60 as intermediate layer in HFCVD system is described. In order to increase the density of diamond nuclei on the wafers, it is not necessary to use negative bias. The UV-light pre-treatment is not beneficial for improving the diamond nucleation. The multi-layers of C60 molecules, but not a monolayer, can increase the density of diamond nuclei in the presence of H atoms.

Key words: diamond thin films, scanning electron microscopy, C60

中图分类号:  (Nucleation and growth)

  • 68.55.A-
68.37.Hk (Scanning electron microscopy (SEM) (including EBIC)) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 78.30.Na (Fullerenes and related materials) 78.40.Ri (Fullerenes and related materials) 68.65.Ac (Multilayers)