Facile fabrication of twisted MoS2 bilayers by direct bonding

doi:10.1088/1674-1056/ae1c23

中国物理B ›› 2026, Vol. 35 ›› Issue (1): 16803-016803.doi: 10.1088/1674-1056/ae1c23

Facile fabrication of twisted MoS₂ bilayers by direct bonding

Yu-Tong Chen(陈雨彤)^1,2,†, Jie-Ying Liu(刘杰英)^2,†,‡, Lan-Ying Zhou(周兰英)², Hua Yu(余画)², Tong Li(李童)², Qing Guan(关清)^2,5, Na Li(李娜)², Yang Chai(柴扬)^1,§, and Guang-Yu Zhang(张广宇)^2,3,4,¶

1 Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, China;
2 Songshan Lake Materials Laboratory, Dongguan 523808, China;
3 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
4 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
5 The School of Integrated Circuits, Sun Yat-sen University, Shenzhen 518107, China

收稿日期:2025-09-09 修回日期:2025-10-28 接受日期:2025-11-06 发布日期:2025-12-29
通讯作者: Jie-Ying Liu, Yang Chai, Guang-Yu Zhang E-mail:jyliu@iphy.ac.cn;ychai@polyu.edu.hk;gyzhang@iphy.ac.cn
基金资助:
This work is supported by Guangdong Major Project of Basic and Applied Basic Research (Grant No. 2021B0301030002), the National Key Research and Development Program (Grant No. 2021YFA1202900), and the National Natural Science Foundation of China (Grant Nos. 62204166 and 62404145).

Facile fabrication of twisted MoS₂ bilayers by direct bonding

1 Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, China;
2 Songshan Lake Materials Laboratory, Dongguan 523808, China;
3 Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;
4 School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China;
5 The School of Integrated Circuits, Sun Yat-sen University, Shenzhen 518107, China

Received:2025-09-09 Revised:2025-10-28 Accepted:2025-11-06 Published:2025-12-29
Contact: Jie-Ying Liu, Yang Chai, Guang-Yu Zhang E-mail:jyliu@iphy.ac.cn;ychai@polyu.edu.hk;gyzhang@iphy.ac.cn
Supported by:
This work is supported by Guangdong Major Project of Basic and Applied Basic Research (Grant No. 2021B0301030002), the National Key Research and Development Program (Grant No. 2021YFA1202900), and the National Natural Science Foundation of China (Grant Nos. 62204166 and 62404145).

1. 2026-016803-SI.pdf(3029KB)

摘要/Abstract

摘要： When stacking two-dimensional (2D) materials with a lattice mismatch and/or a small twist, moiré superlattice emerges with fascinating electronic and optical properties. The fabrication of such stacked 2D materials usually requires multiple transfer and stack processes, assisted by a certain transfer medium which needs to be removed afterwards, and it is very challenging to maintain pristine and clean surfaces/interfaces for these stacked structures. In this work, we report a facile direct bonding method for fabrication of twisted MoS₂ bilayers with ultra-clean surfaces/interfaces. Novel interlayer interactions are revealed in the as-fabricated high-quality samples, leading to twist-angle related dispersion behavior of various Raman modes, such as layer breathing modes, shear modes and E_2g modes, as well as indirect bandgap excitons. Field-effect transistors (FETs) of twisted MoS₂ bilayers also exhibit angle-dependent performance, which could be attributed to the band structure evolution. This facile method holds significance for the future integration of pre-designed multilayer 2D materials and paves a way to explore underlying physical mechanisms and potential applications.

关键词: two-dimensional (2D) materials, direct bonding, moiré superlattice, twistronics

Abstract: When stacking two-dimensional (2D) materials with a lattice mismatch and/or a small twist, moiré superlattice emerges with fascinating electronic and optical properties. The fabrication of such stacked 2D materials usually requires multiple transfer and stack processes, assisted by a certain transfer medium which needs to be removed afterwards, and it is very challenging to maintain pristine and clean surfaces/interfaces for these stacked structures. In this work, we report a facile direct bonding method for fabrication of twisted MoS₂ bilayers with ultra-clean surfaces/interfaces. Novel interlayer interactions are revealed in the as-fabricated high-quality samples, leading to twist-angle related dispersion behavior of various Raman modes, such as layer breathing modes, shear modes and E_2g modes, as well as indirect bandgap excitons. Field-effect transistors (FETs) of twisted MoS₂ bilayers also exhibit angle-dependent performance, which could be attributed to the band structure evolution. This facile method holds significance for the future integration of pre-designed multilayer 2D materials and paves a way to explore underlying physical mechanisms and potential applications.

Key words: two-dimensional (2D) materials, direct bonding, moiré superlattice, twistronics

中图分类号: (Superlattices)

68.65.Cd

78.67.Pt (Multilayers; superlattices; photonic structures; metamaterials)

Yu-Tong Chen(陈雨彤), Jie-Ying Liu(刘杰英), Lan-Ying Zhou(周兰英), Hua Yu(余画), Tong Li(李童), Qing Guan(关清), Na Li(李娜), Yang Chai(柴扬), and Guang-Yu Zhang(张广宇). Facile fabrication of twisted MoS₂ bilayers by direct bonding[J]. 中国物理B, 2026, 35(1): 16803-016803.

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Facile fabrication of twisted MoS₂ bilayers by direct bonding

Facile fabrication of twisted MoS₂ bilayers by direct bonding

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