中国物理B ›› 2024, Vol. 33 ›› Issue (7): 74210-074210.doi: 10.1088/1674-1056/ad432a
Comprehensive study of the ultrafast photoexcited carrier dynamics in Sb2Te3-GeTe superlattices
Zhijiang Ye(叶之江)1, Zuanming Jin(金钻明)1,2,†, Yexin Jiang(蒋叶昕)1, Qi Lu(卢琦)3, Menghui Jia(贾梦辉)5, Dong Qian(钱冬)3,4, Xiamin Huang(黄夏敏)6,7, Zhou Li(李舟)6,7,8, Yan Peng(彭滟)1,2, and Yiming Zhu(朱亦鸣)1,2
- 1 Terahertz Technology Innovation Research Institute, Terahertz Spectrum and Imaging Technology Cooperative Innovation Center, Shanghai Key Laboratory of Modern Optical System, University of Shanghai for Science and Technology, Shanghai 200093, China;
2 Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 200092, China;
3 Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China;
4 Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 200240, China;
5 State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China;
6 GBA Branch of Aerospace Information Research Institute, Chinese Academy of Sciences, Guangzhou 510700, China;
7 Guangdong Provincial Key Laboratory of Terahertz Quantum Electromagnetics, Guangzhou 510700, China;
8 University of Chinese Academy of Sciences, Beijing 100039, China
Comprehensive study of the ultrafast photoexcited carrier dynamics in Sb2Te3-GeTe superlattices
Zhijiang Ye(叶之江)1, Zuanming Jin(金钻明)1,2,†, Yexin Jiang(蒋叶昕)1, Qi Lu(卢琦)3, Menghui Jia(贾梦辉)5, Dong Qian(钱冬)3,4, Xiamin Huang(黄夏敏)6,7, Zhou Li(李舟)6,7,8, Yan Peng(彭滟)1,2, and Yiming Zhu(朱亦鸣)1,2
- 1 Terahertz Technology Innovation Research Institute, Terahertz Spectrum and Imaging Technology Cooperative Innovation Center, Shanghai Key Laboratory of Modern Optical System, University of Shanghai for Science and Technology, Shanghai 200093, China;
2 Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 200092, China;
3 Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China;
4 Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 200240, China;
5 State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China;
6 GBA Branch of Aerospace Information Research Institute, Chinese Academy of Sciences, Guangzhou 510700, China;
7 Guangdong Provincial Key Laboratory of Terahertz Quantum Electromagnetics, Guangzhou 510700, China;
8 University of Chinese Academy of Sciences, Beijing 100039, China
摘要： Chalcogenide superlattices Sb$_{2}$Te$_{3}$-GeTe is a candidate for interfacial phase-change memory (iPCM) data storage devices. By employing terahertz emission spectroscopy and the transient reflectance spectroscopy together, we investigate the ultrafast photoexcited carrier dynamics and current transients in Sb$_{2}$Te$_{3}$-GeTe superlattices. Sample orientation and excitation polarization dependences of the THz emission confirm that ultrafast thermo-electric, shift and injection currents contribute to the THz generation in Sb$_{2}$Te$_{3}$-GeTe superlattices. By decreasing the thickness and increasing the number of GeTe and Sb$_{2}$Te$_{3}$ layer, the interlayer coupling can be enhanced, which significantly reduces the contribution from circular photo-galvanic effect (CPGE). A photo-induced bleaching in the transient reflectance spectroscopy probed in the range of $\sim 1100 $ nm to $\sim 1400 $ nm further demonstrates a gapped state resulting from the interlayer coupling. These demonstrates play an important role in the development of iPCM-based high-speed optoelectronic devices.
中图分类号: (Ultrafast processes; optical pulse generation and pulse compression)
- 42.65.Re