中国物理B ›› 2025, Vol. 34 ›› Issue (9): 97309-097309.doi: 10.1088/1674-1056/adfb54

所属专题: SPECIAL TOPIC — Moiré physics in two-dimensional materials

• • 上一篇    下一篇

Semiregular tessellation of electronic lattices in untwisted bilayer graphene under anisotropic strain gradients

Zeyu Liu(刘泽宇)1,2,3,†, Xianghua Kong(孔祥华)1,†,‡, Zhidan Li(李志聃)1, Zewen Wu(吴泽文)1, Linwei Zhou(周霖蔚)1, Cong Wang(王聪)2,3, and Wei Ji(季威)2,3,§   

  1. 1 College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China;
    2 Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, School of Physics, Renmin University of China, Beijing 100872, China;
    3 Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
  • 收稿日期:2025-05-12 修回日期:2025-07-24 接受日期:2025-08-14 出版日期:2025-08-21 发布日期:2025-09-17
  • 通讯作者: Xianghua Kong, Wei Ji E-mail:kongxianghuaphysics@szu.edu.cn;wji@ruc.edu.cn
  • 基金资助:
    We thank Dr. Kui Gong, Dr. Yibin Hu, and Dr. Yin Wang (all from HZWTECH) and Prof. Yiqi Zhang for helpful discussions. This project was supported by the National Natural Science Foundation of China (Grant Nos. 52461160327, 92477205, 12474173, and 12104313), the National Key R&D Program of China (Grant No. 2023YFA1406500), the Department of Science and Technology of Guangdong Province (Grant No. 2021QN02L820), Shenzhen Science and Technology Program (Grant No. RCYX20231211090126026, the Stable Support Plan Program 20220810161616001), the Fundamental Research Funds for the Central Universities, and the Research Funds of Renmin University of China (Grant No. 22XNKJ30).

Semiregular tessellation of electronic lattices in untwisted bilayer graphene under anisotropic strain gradients

Zeyu Liu(刘泽宇)1,2,3,†, Xianghua Kong(孔祥华)1,†,‡, Zhidan Li(李志聃)1, Zewen Wu(吴泽文)1, Linwei Zhou(周霖蔚)1, Cong Wang(王聪)2,3, and Wei Ji(季威)2,3,§   

  1. 1 College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China;
    2 Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, School of Physics, Renmin University of China, Beijing 100872, China;
    3 Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, China
  • Received:2025-05-12 Revised:2025-07-24 Accepted:2025-08-14 Online:2025-08-21 Published:2025-09-17
  • Contact: Xianghua Kong, Wei Ji E-mail:kongxianghuaphysics@szu.edu.cn;wji@ruc.edu.cn
  • Supported by:
    We thank Dr. Kui Gong, Dr. Yibin Hu, and Dr. Yin Wang (all from HZWTECH) and Prof. Yiqi Zhang for helpful discussions. This project was supported by the National Natural Science Foundation of China (Grant Nos. 52461160327, 92477205, 12474173, and 12104313), the National Key R&D Program of China (Grant No. 2023YFA1406500), the Department of Science and Technology of Guangdong Province (Grant No. 2021QN02L820), Shenzhen Science and Technology Program (Grant No. RCYX20231211090126026, the Stable Support Plan Program 20220810161616001), the Fundamental Research Funds for the Central Universities, and the Research Funds of Renmin University of China (Grant No. 22XNKJ30).

摘要: Two-dimensional (2D) moiré superlattices have emerged as a versatile platform for uncovering exotic quantum phases, many of which arise in bilayer systems exhibiting Archimedean tessellation patterns such as triangular, hexagonal, and kagome lattices. Here, we propose a strategy to engineer semiregular tessellation patterns in untwisted bilayer graphene by applying anisotropic epitaxial tensile strain (AETS) along crystallographic directions. Through force-field and first-principles calculations, we demonstrate that AETS can induce a rich variety of semiregular tessellation geometries, including truncated hextille, prismatic pentagon, and brick-phase arrangements. Characteristic electronic Dirac and flat bands of the lattice models associated with these semiregular tessellations are observed near the Fermi level, arising from interlayer interactions generated by the spatial rearrangement of AB, BA, and SP domains. Furthermore, the real-space observations of electronic kagome, distorted Lieb, brick-like, and one-dimensional stripe lattices demonstrate that AETS enables tunable semiregular tessellation lattices. Our study identifies AETS as a promising new degree of freedom in moiré engineering, offering a reproducible and scalable platform for exploring exotic electronic lattices in moiré systems.

关键词: moiré bilayer, semiregular tessellation, electronic lattice, density functional theory

Abstract: Two-dimensional (2D) moiré superlattices have emerged as a versatile platform for uncovering exotic quantum phases, many of which arise in bilayer systems exhibiting Archimedean tessellation patterns such as triangular, hexagonal, and kagome lattices. Here, we propose a strategy to engineer semiregular tessellation patterns in untwisted bilayer graphene by applying anisotropic epitaxial tensile strain (AETS) along crystallographic directions. Through force-field and first-principles calculations, we demonstrate that AETS can induce a rich variety of semiregular tessellation geometries, including truncated hextille, prismatic pentagon, and brick-phase arrangements. Characteristic electronic Dirac and flat bands of the lattice models associated with these semiregular tessellations are observed near the Fermi level, arising from interlayer interactions generated by the spatial rearrangement of AB, BA, and SP domains. Furthermore, the real-space observations of electronic kagome, distorted Lieb, brick-like, and one-dimensional stripe lattices demonstrate that AETS enables tunable semiregular tessellation lattices. Our study identifies AETS as a promising new degree of freedom in moiré engineering, offering a reproducible and scalable platform for exploring exotic electronic lattices in moiré systems.

Key words: moiré bilayer, semiregular tessellation, electronic lattice, density functional theory

中图分类号:  (Electronic structure of nanoscale materials and related systems)

  • 73.22.-f
81.05.ue (Graphene) 68.65.-k (Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties) 68.65.Cd (Superlattices)