中国物理B ›› 2026, Vol. 35 ›› Issue (3): 36105-036105.doi: 10.1088/1674-1056/adf5a6

• • 上一篇    下一篇

A novel observation of controlled carrier hopping process in B-doped Si nanocrystal/SiC multilayers at low temperatures

Yuhao Wang(王宇皓)1, Teng Sun(孙腾)1, Junnan Han(韩俊楠)1, Jiaming Chen(陈佳明)1, Ting Zhu(朱挺)2, Wei Li(李伟)1, Jun Xu(徐骏)1,2,†, and Kunji Chen(陈坤基)1   

  1. 1 National Laboratory of Solid State Microstructures, State Key Laboratory of Spintronics, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electrical Materials, Nanjing University, Nanjing 210000, China;
    2 School of Microelectronics and School of Integrated Circuits, Jiangsu Key Laboratory of Semi. Dev. & IC Design, Package and Test, Nantong University, Nantong 226019, China
  • 收稿日期:2025-06-09 修回日期:2025-07-17 接受日期:2025-07-30 出版日期:2026-02-11 发布日期:2026-03-03
  • 通讯作者: Jun Xu E-mail:xjun@ntu.edu.cn,junxu@nju.edu.cn
  • 基金资助:
    This work is supported by Quantum Science and Technology – National Science and Technology Major Project (Grant No. 2024ZD0301100), the National Key R&D Program of China (Grant No. 2018YFB2200101), and the National Natural Science Foundation of China (Grant Nos. 61921005 and 62004078).

A novel observation of controlled carrier hopping process in B-doped Si nanocrystal/SiC multilayers at low temperatures

Yuhao Wang(王宇皓)1, Teng Sun(孙腾)1, Junnan Han(韩俊楠)1, Jiaming Chen(陈佳明)1, Ting Zhu(朱挺)2, Wei Li(李伟)1, Jun Xu(徐骏)1,2,†, and Kunji Chen(陈坤基)1   

  1. 1 National Laboratory of Solid State Microstructures, State Key Laboratory of Spintronics, School of Electronics Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electrical Materials, Nanjing University, Nanjing 210000, China;
    2 School of Microelectronics and School of Integrated Circuits, Jiangsu Key Laboratory of Semi. Dev. & IC Design, Package and Test, Nantong University, Nantong 226019, China
  • Received:2025-06-09 Revised:2025-07-17 Accepted:2025-07-30 Online:2026-02-11 Published:2026-03-03
  • Contact: Jun Xu E-mail:xjun@ntu.edu.cn,junxu@nju.edu.cn
  • Supported by:
    This work is supported by Quantum Science and Technology – National Science and Technology Major Project (Grant No. 2024ZD0301100), the National Key R&D Program of China (Grant No. 2018YFB2200101), and the National Natural Science Foundation of China (Grant Nos. 61921005 and 62004078).

RichHTML

0

PDF (PC)

14

赞

补充材料

1

摘要： Recent advances in quantum computing devices make studies on the carrier transport behaviors of silicon nanocrystals (Si NCs) under cryogenic temperature a most important subject. In this work, we study the electrical properties modified by B dopants in Si NC/SiC multilayers. Mobility measurement shows that the scattering mechanism that dominates in our samples in a low temperature range is ionized impurity scattering. Three carrier transport behaviors are identified as variable range hopping (VRH) (20-100 K), multiple phonon hopping (MPH) (100-500 K) and thermally-activated mechanisms (500-660 K). At temperature ranges as low as 30 K, we observe the effect of the Coulomb gap in B-doped Si NC/SiC multilayers that obey the Efros and Shklovskii (ES) law, which was not present in our previous studies concerning Si NC multilayers. The crossover temperature $T_{\rm C}$ is observed to increase with rising B-doping concentrations, which demonstrates another interesting effect of doping in controlling the electrical properties of Si NCs.

关键词: Si NCs, B dopants, Hall mobility, variable range hopping

Abstract: Recent advances in quantum computing devices make studies on the carrier transport behaviors of silicon nanocrystals (Si NCs) under cryogenic temperature a most important subject. In this work, we study the electrical properties modified by B dopants in Si NC/SiC multilayers. Mobility measurement shows that the scattering mechanism that dominates in our samples in a low temperature range is ionized impurity scattering. Three carrier transport behaviors are identified as variable range hopping (VRH) (20-100 K), multiple phonon hopping (MPH) (100-500 K) and thermally-activated mechanisms (500-660 K). At temperature ranges as low as 30 K, we observe the effect of the Coulomb gap in B-doped Si NC/SiC multilayers that obey the Efros and Shklovskii (ES) law, which was not present in our previous studies concerning Si NC multilayers. The crossover temperature $T_{\rm C}$ is observed to increase with rising B-doping concentrations, which demonstrates another interesting effect of doping in controlling the electrical properties of Si NCs.

Key words: Si NCs, B dopants, Hall mobility, variable range hopping

中图分类号:  (Ge and Si)

  • 61.72.uf
61.82.Rx (Nanocrystalline materials) 61.72.U- (Doping and impurity implantation) 73.20.Fz (Weak or Anderson localization)