中国物理B ›› 2026, Vol. 35 ›› Issue (3): 36103-036103.doi: 10.1088/1674-1056/ae1cb3

• • 上一篇    

Physical properties of Cr2S3 at high pressure

Lun Xiong(熊伦)1,†, Mingquan Jiang(江明全)1, Jinxia Zhu(竹锦霞)1, Lin Xia(夏林)1, Hao Wang(王毫)2, Shenghan Zhang(张升瀚)3, Pengfei Tang(汤鹏飞)3, Zhiqiang Chen(陈志强)3, Sheng Jiang(蒋升)4,‡, and Hongliang Dong(董洪亮)3   

  1. 1 School of Intelligent Manufacturing, Sichuan Institute of Arts and Science, Dazhou 635000, China;
    2 Center for High Pressure Science and Technology Advanced Research, Beijing 100093, China;
    3 Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China;
    4 Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, China
  • 收稿日期:2025-08-12 修回日期:2025-10-24 接受日期:2025-11-07 发布日期:2026-02-11
  • 基金资助:
    We gratefully acknowledge the financial supported of the National Key Research and Development Program of China (Grant No. 2021YFB3702102), the National Natural Science Foundation of China (Grant No. 12374019), the Open Fund Project of the Research Institute of Intelligent Manufacturing Industry Technology of SiChuan Arts and Science University (Grant No. ZNZZ2503), and Key Laboratory of Intelligent Optoelectronic System Perception and Application in Sichuan Province, China (Grant No. ZNGD2219).

Physical properties of Cr2S3 at high pressure

Lun Xiong(熊伦)1,†, Mingquan Jiang(江明全)1, Jinxia Zhu(竹锦霞)1, Lin Xia(夏林)1, Hao Wang(王毫)2, Shenghan Zhang(张升瀚)3, Pengfei Tang(汤鹏飞)3, Zhiqiang Chen(陈志强)3, Sheng Jiang(蒋升)4,‡, and Hongliang Dong(董洪亮)3   

  1. 1 School of Intelligent Manufacturing, Sichuan Institute of Arts and Science, Dazhou 635000, China;
    2 Center for High Pressure Science and Technology Advanced Research, Beijing 100093, China;
    3 Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China;
    4 Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201204, China
  • Received:2025-08-12 Revised:2025-10-24 Accepted:2025-11-07 Published:2026-02-11
  • Contact: Lun Xiong, Sheng Jiang E-mail:1094129778@qq.com;jiangs@sari.ac.cn
  • Supported by:
    We gratefully acknowledge the financial supported of the National Key Research and Development Program of China (Grant No. 2021YFB3702102), the National Natural Science Foundation of China (Grant No. 12374019), the Open Fund Project of the Research Institute of Intelligent Manufacturing Industry Technology of SiChuan Arts and Science University (Grant No. ZNZZ2503), and Key Laboratory of Intelligent Optoelectronic System Perception and Application in Sichuan Province, China (Grant No. ZNGD2219).

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摘要： The compressive behavior of Cr$_{2}$S$_{3}$ in a quasi-hydrostatic environment was investigated by synchrotron x-ray diffraction using silicone oil as the pressure-transmitting medium in a diamond anvil cell. The maximum pressure was 34 GPa. We found that Cr$_{2}$S$_{3}$ undergoes a structural phase transition at a pressure of 8.5 GPa and the bulk modulus before the phase transition was fitted to be 88 GPa, which corresponds to a bulk modulus of 67 GPa calculated by first-principles theory. In addition, we also investigated the electrical resistance of Cr$_{2}$S$_{3}$ at different pressures and temperatures and found that the resistance decreases rapidly with increasing pressure or temperature and then remains almost unchanged with an increase in pressure or temperature. This indicates that Cr$_{2}$S$_{3}$ undergoes a structural phase transition around 8 GPa. In order to accurately confirm the phase transition pressure, high-pressure Raman experiments were used. We found that the position of Raman peak 3 increases approximately linearly at low pressure and remains constant above 8 GPa, indicating that a structural phase transition occurs at 8 GPa. Finally, the deviatoric stress of Cr$_{2}$S$_{3}$ at high pressures was investigated by the linewidth analysis method. The results show that the deviatoric stress increases approximately linearly at low pressures in the range of 2.8-6.2 GPa.

关键词: Cr$_{2}$S$_{3}$, high pressure, equation of state, resistance, Raman scattering

Abstract: The compressive behavior of Cr$_{2}$S$_{3}$ in a quasi-hydrostatic environment was investigated by synchrotron x-ray diffraction using silicone oil as the pressure-transmitting medium in a diamond anvil cell. The maximum pressure was 34 GPa. We found that Cr$_{2}$S$_{3}$ undergoes a structural phase transition at a pressure of 8.5 GPa and the bulk modulus before the phase transition was fitted to be 88 GPa, which corresponds to a bulk modulus of 67 GPa calculated by first-principles theory. In addition, we also investigated the electrical resistance of Cr$_{2}$S$_{3}$ at different pressures and temperatures and found that the resistance decreases rapidly with increasing pressure or temperature and then remains almost unchanged with an increase in pressure or temperature. This indicates that Cr$_{2}$S$_{3}$ undergoes a structural phase transition around 8 GPa. In order to accurately confirm the phase transition pressure, high-pressure Raman experiments were used. We found that the position of Raman peak 3 increases approximately linearly at low pressure and remains constant above 8 GPa, indicating that a structural phase transition occurs at 8 GPa. Finally, the deviatoric stress of Cr$_{2}$S$_{3}$ at high pressures was investigated by the linewidth analysis method. The results show that the deviatoric stress increases approximately linearly at low pressures in the range of 2.8-6.2 GPa.

Key words: Cr$_{2}$S$_{3}$, high pressure, equation of state, resistance, Raman scattering

中图分类号:  (X-ray diffraction)

  • 61.05.cp
07.35.+k (High-pressure apparatus; shock tubes; diamond anvil cells) 64.30.Jk (Equations of state of nonmetals) 72.90.+y (Other topics in electronic transport in condensed matter)