Observation of spin-glass behavior in 1111-type magnetic semiconductor (La, Ba)(Zn, Mn)SbO

doi:10.1088/1674-1056/acf44a

中国物理B ›› 2023, Vol. 32 ›› Issue (12): 127502-127502.doi: 10.1088/1674-1056/acf44a

Observation of spin-glass behavior in 1111-type magnetic semiconductor (La, Ba)(Zn, Mn)SbO

Xueqin Zhao(赵雪芹)¹, Jinou Dong(董金瓯)¹, Rufei Zhang(张茹菲)¹, Qiaolin Yang(杨巧林)¹, Lingfeng Xie(谢玲凤)¹, Licheng Fu(傅立承)¹, Yilun Gu(顾轶伦)¹, Xun Pan(潘洵)¹, and Fanlong Ning(宁凡龙)^1,2,3,4,†

1 Zhejiang Province Key Laboratory of Quantum Technology and Device and School of Physics, Zhejiang University, Hangzhou 310027, China;
2 State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China;
3 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
4 Science and Technology Innovation Center, Chifeng High-Tech Industrial Development Zone, Chifeng 025250, China

收稿日期:2023-06-17 修回日期:2023-08-18 接受日期:2023-08-28 出版日期:2023-11-14 发布日期:2023-11-27
通讯作者: Fanlong Ning E-mail:ningfl@zju.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant Nos.2022YFA1402701 and 2022YFA1403202), the National Natural Science Foundation of China (Grant No.12074333), and the Key Research and Development Program of Zhejiang Province, China (Grant No.2021C01002).

Observation of spin-glass behavior in 1111-type magnetic semiconductor (La, Ba)(Zn, Mn)SbO

1 Zhejiang Province Key Laboratory of Quantum Technology and Device and School of Physics, Zhejiang University, Hangzhou 310027, China;
2 State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou 310027, China;
3 Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China;
4 Science and Technology Innovation Center, Chifeng High-Tech Industrial Development Zone, Chifeng 025250, China

Received:2023-06-17 Revised:2023-08-18 Accepted:2023-08-28 Online:2023-11-14 Published:2023-11-27
Contact: Fanlong Ning E-mail:ningfl@zju.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant Nos.2022YFA1402701 and 2022YFA1403202), the National Natural Science Foundation of China (Grant No.12074333), and the Key Research and Development Program of Zhejiang Province, China (Grant No.2021C01002).

摘要/Abstract

摘要： We report the successful fabrication of a new 1111-type bulk magnetic semiconductor (La,Ba)(Zn,Mn)SbO through the solid solution of (La,Ba) and (Zn,Mn) in the parent compound LaZnSbO. The polycrystalline samples (La,Ba)(Zn,Mn)SbO crystallize into ZrCuSiAs-type tetragonal structure, which has the same structure as iron-based superconductor LaFeAsO_1-δ. The DC magnetization measurements indicate the existence of spin-glass ordering, and the coercive field is up to ~ 11500 Oe (1 Oe=79.5775 A·m^-1). The AC magnetic susceptibility further determines that the samples evolve into a conventional spin-glass ordering state below the spin freezing temperature T_f. In addition, the negative magnetoresistance (MR ≡[ρ(H)-ρ(0)]/ρ(0)) reaches - 88% under 9 T.

关键词: magnetic semiconductors, spin-glass, negative magnetoresistance

Abstract: We report the successful fabrication of a new 1111-type bulk magnetic semiconductor (La,Ba)(Zn,Mn)SbO through the solid solution of (La,Ba) and (Zn,Mn) in the parent compound LaZnSbO. The polycrystalline samples (La,Ba)(Zn,Mn)SbO crystallize into ZrCuSiAs-type tetragonal structure, which has the same structure as iron-based superconductor LaFeAsO_1-δ. The DC magnetization measurements indicate the existence of spin-glass ordering, and the coercive field is up to ~ 11500 Oe (1 Oe=79.5775 A·m^-1). The AC magnetic susceptibility further determines that the samples evolve into a conventional spin-glass ordering state below the spin freezing temperature T_f. In addition, the negative magnetoresistance (MR ≡[ρ(H)-ρ(0)]/ρ(0)) reaches - 88% under 9 T.

Key words: magnetic semiconductors, spin-glass, negative magnetoresistance

中图分类号: (Magnetic semiconductors)

75.50.Pp

75.50.Lk (Spin glasses and other random magnets) 75.30.Cr (Saturation moments and magnetic susceptibilities)

Xueqin Zhao(赵雪芹), Jinou Dong(董金瓯), Rufei Zhang(张茹菲), Qiaolin Yang(杨巧林), Lingfeng Xie(谢玲凤), Licheng Fu(傅立承), Yilun Gu(顾轶伦), Xun Pan(潘洵), and Fanlong Ning(宁凡龙). Observation of spin-glass behavior in 1111-type magnetic semiconductor (La, Ba)(Zn, Mn)SbO[J]. 中国物理B, 2023, 32(12): 127502-127502.

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Observation of spin-glass behavior in 1111-type magnetic semiconductor (La, Ba)(Zn, Mn)SbO

Observation of spin-glass behavior in 1111-type magnetic semiconductor (La, Ba)(Zn, Mn)SbO

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