中国物理B ›› 2024, Vol. 33 ›› Issue (3): 37801-037801.doi: 10.1088/1674-1056/acf27f

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Investigation of reflection anisotropy induced by micropipe defects on the surface of a 4H-SiC single crystal using scanning anisotropy microscopy

Wei Huang(黄威)1,2,3,†, Jinling Yu(俞金玲)4,†, Yu Liu(刘雨)1,‡, Yan Peng(彭燕)5, Lijun Wang(王利军)1, Ping Liang(梁平)1, Tangsheng Chen(陈堂胜)3, Xiangang Xu(徐现刚)5, Fengqi Liu(刘峰奇)1, and Yonghai Chen(陈涌海)1,2,§   

  1. 1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 National Key Laboratory of Solid-state Microwave Devices and Circuits, Nanjing Electronic Devices Institute, Nanjing 210016, China;
    4 Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China;
    5 State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
  • 收稿日期:2023-06-15 修回日期:2023-08-06 接受日期:2023-08-22 出版日期:2024-02-22 发布日期:2024-02-29
  • 通讯作者: Yu Liu, Yonghai Chen E-mail:liuyu@semi.ac.cn;yhchen@semi.ac.cn
  • 基金资助:
    Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFE0204001, 2018YFA0209103, 2016YFB0400101, and 2016YFB0402303), the National Natural Science Foundation of China (Grant Nos. 61627822, 61704121, 61991430, and 62074036), and Postdoctoral Research Program of Jiangsu Province (Grant No. 2021K599C).

Investigation of reflection anisotropy induced by micropipe defects on the surface of a 4H-SiC single crystal using scanning anisotropy microscopy

Wei Huang(黄威)1,2,3,†, Jinling Yu(俞金玲)4,†, Yu Liu(刘雨)1,‡, Yan Peng(彭燕)5, Lijun Wang(王利军)1, Ping Liang(梁平)1, Tangsheng Chen(陈堂胜)3, Xiangang Xu(徐现刚)5, Fengqi Liu(刘峰奇)1, and Yonghai Chen(陈涌海)1,2,§   

  1. 1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China;
    3 National Key Laboratory of Solid-state Microwave Devices and Circuits, Nanjing Electronic Devices Institute, Nanjing 210016, China;
    4 Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou 350108, China;
    5 State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China
  • Received:2023-06-15 Revised:2023-08-06 Accepted:2023-08-22 Online:2024-02-22 Published:2024-02-29
  • Contact: Yu Liu, Yonghai Chen E-mail:liuyu@semi.ac.cn;yhchen@semi.ac.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant Nos. 2018YFE0204001, 2018YFA0209103, 2016YFB0400101, and 2016YFB0402303), the National Natural Science Foundation of China (Grant Nos. 61627822, 61704121, 61991430, and 62074036), and Postdoctoral Research Program of Jiangsu Province (Grant No. 2021K599C).

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摘要： Optical reflection anisotropy microscopy mappings of micropipe defects on the surface of a 4H-SiC single crystal are studied by the scanning anisotropy microscopy (SAM) system. The reflection anisotropy (RA) image with a 'butterfly pattern' is obtained around the micropipes by SAM. The RA image of the edge dislocations is theoretically simulated based on dislocation theory and the photoelastic principle. By comparing with the Raman spectrum, it is verified that the micropipes consist of edge dislocations. The different patterns of the RA images are due to the different orientations of the Burgers vectors. Besides, the strain distribution of the micropipes is also deduced. One can identify the dislocation type, the direction of the Burgers vector and the optical anisotropy from the RA image by using SAM. Therefore, SAM is an ideal tool to measure the optical anisotropy induced by the strain field around a defect.

关键词: scanning anisotropy microscopy, SiC, reflection anisotropy, edge dislocation

Abstract: Optical reflection anisotropy microscopy mappings of micropipe defects on the surface of a 4H-SiC single crystal are studied by the scanning anisotropy microscopy (SAM) system. The reflection anisotropy (RA) image with a 'butterfly pattern' is obtained around the micropipes by SAM. The RA image of the edge dislocations is theoretically simulated based on dislocation theory and the photoelastic principle. By comparing with the Raman spectrum, it is verified that the micropipes consist of edge dislocations. The different patterns of the RA images are due to the different orientations of the Burgers vectors. Besides, the strain distribution of the micropipes is also deduced. One can identify the dislocation type, the direction of the Burgers vector and the optical anisotropy from the RA image by using SAM. Therefore, SAM is an ideal tool to measure the optical anisotropy induced by the strain field around a defect.

Key words: scanning anisotropy microscopy, SiC, reflection anisotropy, edge dislocation

中图分类号:  (Piezo-, elasto-optical effects)

  • 78.20.H-
78.20.Ci (Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)) 33.20.Fb (Raman and Rayleigh spectra (including optical scattering) ?) 68.35.Gy (Mechanical properties; surface strains)