Simulation of optical and electrical synaptic functions in MoS2/α-In2Se3 heterojunction memtransistors

doi:10.1088/1674-1056/acee58

中国物理B ›› 2023, Vol. 32 ›› Issue (11): 117301-117301.doi: 10.1088/1674-1056/acee58

Simulation of optical and electrical synaptic functions in MoS₂/α-In₂Se₃ heterojunction memtransistors

Tao Xiang(相韬), Fengxiang Chen(陈凤翔)^†, Xiaoli Li(李晓莉),Xiaodong Wang(王小东), Yuling Yan(闫誉玲), and Lisheng Wang(汪礼胜)^‡

Department of Physics Science and Technology, School of Science, Wuhan University of Technology, Wuhan 430070, China

收稿日期:2023-06-25 修回日期:2023-07-28 接受日期:2023-08-09 出版日期:2023-10-16 发布日期:2023-10-24
通讯作者: Fengxiang Chen, Lisheng Wang E-mail:phonixchen79@whut.edu.cn;wang_lesson@whut.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 51702245).

Simulation of optical and electrical synaptic functions in MoS₂/α-In₂Se₃ heterojunction memtransistors

Tao Xiang(相韬), Fengxiang Chen(陈凤翔)^†, Xiaoli Li(李晓莉),Xiaodong Wang(王小东), Yuling Yan(闫誉玲), and Lisheng Wang(汪礼胜)^‡

Department of Physics Science and Technology, School of Science, Wuhan University of Technology, Wuhan 430070, China

Received:2023-06-25 Revised:2023-07-28 Accepted:2023-08-09 Online:2023-10-16 Published:2023-10-24
Contact: Fengxiang Chen, Lisheng Wang E-mail:phonixchen79@whut.edu.cn;wang_lesson@whut.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 51702245).

摘要/Abstract

摘要： Memtransistors combine memristors and field-effect transistors, which can introduce multi-port control and have significant applications for enriching storage methods. In this paper, multilayer α-In₂Se₃ and MoS₂ were transferred to the substrate by the mechanical exfoliation method, then a heterojunction MoS₂/α-In₂Se₃ memtransistor was prepared. Neural synaptic simulations were performed using electrical and optical pulses as input signals. Through measurements, such as excitatory/inhibitory post-synaptic current (EPSC/IPSC), long-term potentiation/depression (LTP/LTD), and paired-pulse facilitation/depression (PPF/PPD), it can be found that the fabricated device could simulate various functions of neural synapses well, and could work as an electronic synapse in artificial neural networks, proposing a possible solution for neuromorphic storage and computation.

关键词: α-In₂Se₃, MoS₂, dual-gate control by electric and light, neural synaptic function simulation

Abstract: Memtransistors combine memristors and field-effect transistors, which can introduce multi-port control and have significant applications for enriching storage methods. In this paper, multilayer α-In₂Se₃ and MoS₂ were transferred to the substrate by the mechanical exfoliation method, then a heterojunction MoS₂/α-In₂Se₃ memtransistor was prepared. Neural synaptic simulations were performed using electrical and optical pulses as input signals. Through measurements, such as excitatory/inhibitory post-synaptic current (EPSC/IPSC), long-term potentiation/depression (LTP/LTD), and paired-pulse facilitation/depression (PPF/PPD), it can be found that the fabricated device could simulate various functions of neural synapses well, and could work as an electronic synapse in artificial neural networks, proposing a possible solution for neuromorphic storage and computation.

Key words: α-In₂Se₃, MoS₂, dual-gate control by electric and light, neural synaptic function simulation

中图分类号: (Metal-semiconductor-metal structures)

73.40.Sx

87.18.Sn (Neural networks and synaptic communication) 85.30.Pq (Bipolar transistors)

Tao Xiang(相韬), Fengxiang Chen(陈凤翔), Xiaoli Li(李晓莉),Xiaodong Wang(王小东), Yuling Yan(闫誉玲), and Lisheng Wang(汪礼胜). Simulation of optical and electrical synaptic functions in MoS₂/α-In₂Se₃ heterojunction memtransistors[J]. 中国物理B, 2023, 32(11): 117301-117301.

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Simulation of optical and electrical synaptic functions in MoS₂/α-In₂Se₃ heterojunction memtransistors

Simulation of optical and electrical synaptic functions in MoS₂/α-In₂Se₃ heterojunction memtransistors

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