Anomalous photoluminescence enhancement and resonance charge transfer in type-II 2D lateral heterostructures

doi:10.1088/1674-1056/acc1d1

中国物理B ›› 2023, Vol. 32 ›› Issue (8): 87801-087801.doi: 10.1088/1674-1056/acc1d1

Anomalous photoluminescence enhancement and resonance charge transfer in type-II 2D lateral heterostructures

Chun-Yan Zhao(赵春艳)¹, Sha-Sha Li(李莎莎)², and Yong Yan(闫勇)^1,†

1. School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China;
2. School of Electronic Engineering, Chaohu University, Hefei 238024, China

收稿日期:2022-11-05 修回日期:2023-02-26 接受日期:2023-03-07 发布日期:2023-07-14
通讯作者: Yong Yan E-mail:yanyong@htu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No.61804047), the Training Program for the Natural Science Foundation of Henan Normal University,China (Grant No.2017PL02), the Scientific Research Start-up Foundation for PhD of Chaohu University, China (Grant No.KYQD-2023012), the Natural Science Foundation Henan Province of China (Grant No.232300421236), and the High Performance Computing Center (HPCC) of Henan Normal University, China.

Anomalous photoluminescence enhancement and resonance charge transfer in type-II 2D lateral heterostructures

Chun-Yan Zhao(赵春艳)¹, Sha-Sha Li(李莎莎)², and Yong Yan(闫勇)^1,†

1. School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China;
2. School of Electronic Engineering, Chaohu University, Hefei 238024, China

Received:2022-11-05 Revised:2023-02-26 Accepted:2023-03-07 Published:2023-07-14
Contact: Yong Yan E-mail:yanyong@htu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No.61804047), the Training Program for the Natural Science Foundation of Henan Normal University,China (Grant No.2017PL02), the Scientific Research Start-up Foundation for PhD of Chaohu University, China (Grant No.KYQD-2023012), the Natural Science Foundation Henan Province of China (Grant No.232300421236), and the High Performance Computing Center (HPCC) of Henan Normal University, China.

1. 2023-087801-SI.pdf(482KB)

摘要/Abstract

摘要： Type-II band alignment can realize the efficient charge transfer and separation at the semiconductor heterointerface, which results in photoluminescence (PL) quenching. Recently, several researches demonstrated great enhancement of localized PL at the interface of type-II two-dimensional (2D) heterostructure. However, the dominant physical mechanism of this enhanced PL emission has not been well understood. In this work, we symmetrically study the exciton dynamics of type-II lateral heterostructures of monolayer MoS₂ and WS₂ at room temperatures. The strong PL enhancement along the one-dimensional (1D) heterointerface is associated with the trion emission of the WS₂ shell, while a dramatic PL quenching of neutral exciton is observed on the MoS₂ core. The enhanced quantum yield of WS₂ trion emission can be explained by charge-transfer-enhanced photoexcited carrier dynamics, which is facilitated by resonance hole transfer from MoS₂ side to WS₂ side. This work sheds light on the 1D exciton photophysics in lateral heterostructures, which has the potential to lead to new concepts and applications of optoelectronic device.

关键词: lateral heterostructures, resonance charge transfer, MoS₂/WS₂, photoluminescence enhancement, band alignment

Abstract: Type-II band alignment can realize the efficient charge transfer and separation at the semiconductor heterointerface, which results in photoluminescence (PL) quenching. Recently, several researches demonstrated great enhancement of localized PL at the interface of type-II two-dimensional (2D) heterostructure. However, the dominant physical mechanism of this enhanced PL emission has not been well understood. In this work, we symmetrically study the exciton dynamics of type-II lateral heterostructures of monolayer MoS₂ and WS₂ at room temperatures. The strong PL enhancement along the one-dimensional (1D) heterointerface is associated with the trion emission of the WS₂ shell, while a dramatic PL quenching of neutral exciton is observed on the MoS₂ core. The enhanced quantum yield of WS₂ trion emission can be explained by charge-transfer-enhanced photoexcited carrier dynamics, which is facilitated by resonance hole transfer from MoS₂ side to WS₂ side. This work sheds light on the 1D exciton photophysics in lateral heterostructures, which has the potential to lead to new concepts and applications of optoelectronic device.

Key words: lateral heterostructures, resonance charge transfer, MoS₂/WS₂, photoluminescence enhancement, band alignment

中图分类号: (Other semiconductors)

78.66.Li

78.40.Fy (Semiconductors) 68.47.Fg (Semiconductor surfaces) 68.35.bg (Semiconductors)

Chun-Yan Zhao(赵春艳), Sha-Sha Li(李莎莎), and Yong Yan(闫勇). Anomalous photoluminescence enhancement and resonance charge transfer in type-II 2D lateral heterostructures[J]. 中国物理B, 2023, 32(8): 87801-087801.

Chun-Yan Zhao(赵春艳), Sha-Sha Li(李莎莎), and Yong Yan(闫勇). Anomalous photoluminescence enhancement and resonance charge transfer in type-II 2D lateral heterostructures[J]. Chin. Phys. B, 2023, 32(8): 87801-087801.

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Anomalous photoluminescence enhancement and resonance charge transfer in type-II 2D lateral heterostructures

Anomalous photoluminescence enhancement and resonance charge transfer in type-II 2D lateral heterostructures

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