中国物理B ›› 2023, Vol. 32 ›› Issue (9): 98507-098507.doi: 10.1088/1674-1056/ace61b

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Planar InAlAs/InGaAs avalanche photodiode with 360 GHz gain×bandwidth product

Shuai Wang(王帅)1,2, Han Ye(叶焓)1,2, Li-Yan Geng(耿立妍)1,2, Fan Xiao(肖帆)1,2, Yi-Miao Chu(褚艺渺)1,2, Yu Zheng(郑煜)1,2, and Qin Han(韩勤)1,2,†   

  1. 1 Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2023-04-28 修回日期:2023-07-06 接受日期:2023-07-11 出版日期:2023-08-15 发布日期:2023-09-07
  • 通讯作者: Qin Han E-mail:hanqin@semi.ac.cn
  • 基金资助:
    This study was funded by the National Key R&D Program of China (Grant No. 2020YFB1805701) and the National Natural Foundation of China (Grant No. 61934003).

Planar InAlAs/InGaAs avalanche photodiode with 360 GHz gain×bandwidth product

Shuai Wang(王帅)1,2, Han Ye(叶焓)1,2, Li-Yan Geng(耿立妍)1,2, Fan Xiao(肖帆)1,2, Yi-Miao Chu(褚艺渺)1,2, Yu Zheng(郑煜)1,2, and Qin Han(韩勤)1,2,†   

  1. 1 Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2023-04-28 Revised:2023-07-06 Accepted:2023-07-11 Online:2023-08-15 Published:2023-09-07
  • Contact: Qin Han E-mail:hanqin@semi.ac.cn
  • Supported by:
    This study was funded by the National Key R&D Program of China (Grant No. 2020YFB1805701) and the National Natural Foundation of China (Grant No. 61934003).

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摘要： This paper describes a guardring-free planar InAlAs/InGaAs avalanche photodiode (APD) by computational simulations and experimental results. The APD adopts the structure of separate absorption, charge, and multiplication (SACM) with top-illuminated. Computational simulations demonstrate how edge breakdown effect is suppressed in the guardring-free structure. The fabricated APD experiment results show that it can obtain a very low dark current while achieving a high gain×bandwidth (GB) product. The dark current is 3 nA at 0.9Vbr, and the unit responsivity is 0.4 A/W. The maximum 3 dB bandwidth of 24 GHz and a GB product of 360 GHz are achieved for the fabricated APD operating at 1.55 upmu m.

关键词: avalanche photodiode, planar, gain×bandwidth product, dark current

Abstract: This paper describes a guardring-free planar InAlAs/InGaAs avalanche photodiode (APD) by computational simulations and experimental results. The APD adopts the structure of separate absorption, charge, and multiplication (SACM) with top-illuminated. Computational simulations demonstrate how edge breakdown effect is suppressed in the guardring-free structure. The fabricated APD experiment results show that it can obtain a very low dark current while achieving a high gain×bandwidth (GB) product. The dark current is 3 nA at 0.9Vbr, and the unit responsivity is 0.4 A/W. The maximum 3 dB bandwidth of 24 GHz and a GB product of 360 GHz are achieved for the fabricated APD operating at 1.55 upmu m.

Key words: avalanche photodiode, planar, gain×bandwidth product, dark current

中图分类号:  (Photodetectors (including infrared and CCD detectors))

  • 85.60.Gz
73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)