Ionic liquid gating control of planar Hall effect in Ni80Fe20/HfO2 heterostructures

doi:10.1088/1674-1056/ab8da9

中国物理B ›› 2020, Vol. 29 ›› Issue (7): 77507-077507.doi: 10.1088/1674-1056/ab8da9

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Ionic liquid gating control of planar Hall effect in Ni₈₀Fe₂₀/HfO₂ heterostructures

Yang-Ping Wang(汪样平), Fu-Fu Liu(刘福福), Cai Zhou(周偲), Chang-Jun Jiang(蒋长军)

1 Key Laboratory for Magnetism and Magnetic Materials, Ministry of Education, Lanzhou University, Lanzhou 730000, China;
2 Key Laboratory of Special Function Materials and Structure Design, Ministry of Education, Lanzhou University, Lanzhou 730000, China;
3 Hubei Province Engineering Research Center for Intelligent Micro-nano Medical Equipment and Key Technologies, School of Electrical and Electronics Engineering, Wuhan 430202, China

收稿日期:2020-03-03 修回日期:2020-04-23 出版日期:2020-07-05 发布日期:2020-07-05
通讯作者: Chang-Jun Jiang E-mail:jiangchj@lzu.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51671099 and 11974149), the Open Foundation Project of Jiangsu Key Laboratory of Thin Films (Grant No. KJS1745), the Program for Changjiang Scholars and Innovative Research Team in University, China (Grant No. IRT-16R35), and the Fundamental Research Funds for the Central Universities, China.

Ionic liquid gating control of planar Hall effect in Ni₈₀Fe₂₀/HfO₂ heterostructures

Yang-Ping Wang(汪样平)^1,2, Fu-Fu Liu(刘福福)^1,2, Cai Zhou(周偲)³, Chang-Jun Jiang(蒋长军)^1,2

1 Key Laboratory for Magnetism and Magnetic Materials, Ministry of Education, Lanzhou University, Lanzhou 730000, China;
2 Key Laboratory of Special Function Materials and Structure Design, Ministry of Education, Lanzhou University, Lanzhou 730000, China;
3 Hubei Province Engineering Research Center for Intelligent Micro-nano Medical Equipment and Key Technologies, School of Electrical and Electronics Engineering, Wuhan 430202, China

Received:2020-03-03 Revised:2020-04-23 Online:2020-07-05 Published:2020-07-05
Contact: Chang-Jun Jiang E-mail:jiangchj@lzu.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 51671099 and 11974149), the Open Foundation Project of Jiangsu Key Laboratory of Thin Films (Grant No. KJS1745), the Program for Changjiang Scholars and Innovative Research Team in University, China (Grant No. IRT-16R35), and the Fundamental Research Funds for the Central Universities, China.

摘要/Abstract

摘要： We report a tunable transverse magnetoresistance of the planar Hall effect (PHE), up to 48% in the Ni₈₀Fe₂₀/HfO₂ heterostructures. This control is achieved by applying a gate voltage with an ionic liquid technique at ultra-low voltage, which exhibits a gate-dependent PHE. Moreover, in the range of 0-V to 1-V gate voltage, transverse magnetoresistance of PHE can be continuously regulated. Ferromagnetic resonance (FMR) also demonstrates the shift of the resonance field at low gate voltage. This provides a new method for the design of the electric field continuous control spintronics device with ultra-low energy consumption.

关键词: ionic liquid gating, planar Hall effect, electric field regulation

Abstract: We report a tunable transverse magnetoresistance of the planar Hall effect (PHE), up to 48% in the Ni₈₀Fe₂₀/HfO₂ heterostructures. This control is achieved by applying a gate voltage with an ionic liquid technique at ultra-low voltage, which exhibits a gate-dependent PHE. Moreover, in the range of 0-V to 1-V gate voltage, transverse magnetoresistance of PHE can be continuously regulated. Ferromagnetic resonance (FMR) also demonstrates the shift of the resonance field at low gate voltage. This provides a new method for the design of the electric field continuous control spintronics device with ultra-low energy consumption.

Key words: ionic liquid gating, planar Hall effect, electric field regulation

中图分类号: (Magnetoelectric effects, multiferroics)

75.85.+t

75.90.+w (Other topics in magnetic properties and materials)

汪样平, 刘福福, 周偲, 蒋长军. Ionic liquid gating control of planar Hall effect in Ni₈₀Fe₂₀/HfO₂ heterostructures[J]. 中国物理B, 2020, 29(7): 77507-077507.

Yang-Ping Wang(汪样平), Fu-Fu Liu(刘福福), Cai Zhou(周偲), Chang-Jun Jiang(蒋长军). Ionic liquid gating control of planar Hall effect in Ni₈₀Fe₂₀/HfO₂ heterostructures[J]. Chin. Phys. B, 2020, 29(7): 77507-077507.

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Ionic liquid gating control of planar Hall effect in Ni₈₀Fe₂₀/HfO₂ heterostructures

Ionic liquid gating control of planar Hall effect in Ni₈₀Fe₂₀/HfO₂ heterostructures

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