Spin transport characteristics modulated by the GeBi interlayer in Y3Fe5O12/GeBi/Pt heterostructures

doi:10.1088/1674-1056/ace3aa

中国物理B ›› 2024, Vol. 33 ›› Issue (2): 27201-027201.doi: 10.1088/1674-1056/ace3aa

Spin transport characteristics modulated by the GeBi interlayer in Y₃Fe₅O₁₂/GeBi/Pt heterostructures

Mingming Li(李明明)¹, Lei Zhang(张磊)², Lichuan Jin(金立川)², and Haizhong Guo(郭海中)^1,3,†

1 Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China;
2 State Key Laboratory of Electronic Thin Films & Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
3 Institute of Quantum Materials and Physics, Henan Academy of Sciences, Zhengzhou 450046, China

收稿日期:2023-05-07 修回日期:2023-06-30 接受日期:2023-07-03 出版日期:2024-01-16 发布日期:2024-01-16
通讯作者: Haizhong Guo E-mail:hguo@zzu.edu.cn
基金资助:
Project supported by the National Key Research and Development Program of China (Grant No. 2021YFA0718701), the China Postdoctoral Science Foundation (Grant No. 2022M722888), and the National Natural Science Foundation of China (Grant Nos. 12174347 and 12004340).

Spin transport characteristics modulated by the GeBi interlayer in Y₃Fe₅O₁₂/GeBi/Pt heterostructures

Mingming Li(李明明)¹, Lei Zhang(张磊)², Lichuan Jin(金立川)², and Haizhong Guo(郭海中)^1,3,†

1 Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China;
2 State Key Laboratory of Electronic Thin Films & Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
3 Institute of Quantum Materials and Physics, Henan Academy of Sciences, Zhengzhou 450046, China

Received:2023-05-07 Revised:2023-06-30 Accepted:2023-07-03 Online:2024-01-16 Published:2024-01-16
Contact: Haizhong Guo E-mail:hguo@zzu.edu.cn
Supported by:
Project supported by the National Key Research and Development Program of China (Grant No. 2021YFA0718701), the China Postdoctoral Science Foundation (Grant No. 2022M722888), and the National Natural Science Foundation of China (Grant Nos. 12174347 and 12004340).

摘要/Abstract

摘要： For the past few years, germanium-based semiconductor spintronics has attracted considerable interest due to its potential for integration into mainstream semiconductor technology. The main challenges in the development of modern semiconductor spintronics are the generation, detection, and manipulation of spin currents. Here, the transport characteristics of a spin current generated by spin pumping through a GeBi semiconductor barrier in Y₃Fe₅O₁₂/GeBi/Pt heterostructures were investigated systematically. The effective spin-mixing conductance and inverse spin Hall voltage to quantitatively describe the spin transport characteristics were extracted. The spin-injection efficiency in the Y₃Fe₅O₁₂/GeBi/Pt heterostructures is comparable to that of the Y₃Fe₅O₁₂/Pt bilayer, and the inverse spin Hall voltage exponential decays with the increase in the barrier thickness. Furthermore, the band gap of the GeBi layer was tuned by changing the Bi content. The spin-injection efficiency at the YIG/semiconductor interface and the spin transportation within the semiconductor barrier are related to the band gap of the GeBi layer. Our results may be used as guidelines for the fabrication of efficient spin transmission structures and may lead to further studies on the impacts of different kinds of barrier materials.

关键词: spin current, Y₃Fe₅O₁₂/GeBi/Pt heterostructures, spin pumping, inverse spin Hall effect

Abstract: For the past few years, germanium-based semiconductor spintronics has attracted considerable interest due to its potential for integration into mainstream semiconductor technology. The main challenges in the development of modern semiconductor spintronics are the generation, detection, and manipulation of spin currents. Here, the transport characteristics of a spin current generated by spin pumping through a GeBi semiconductor barrier in Y₃Fe₅O₁₂/GeBi/Pt heterostructures were investigated systematically. The effective spin-mixing conductance and inverse spin Hall voltage to quantitatively describe the spin transport characteristics were extracted. The spin-injection efficiency in the Y₃Fe₅O₁₂/GeBi/Pt heterostructures is comparable to that of the Y₃Fe₅O₁₂/Pt bilayer, and the inverse spin Hall voltage exponential decays with the increase in the barrier thickness. Furthermore, the band gap of the GeBi layer was tuned by changing the Bi content. The spin-injection efficiency at the YIG/semiconductor interface and the spin transportation within the semiconductor barrier are related to the band gap of the GeBi layer. Our results may be used as guidelines for the fabrication of efficient spin transmission structures and may lead to further studies on the impacts of different kinds of barrier materials.

Key words: spin current, Y₃Fe₅O₁₂/GeBi/Pt heterostructures, spin pumping, inverse spin Hall effect

中图分类号: (Spin transport through interfaces)

72.25.Mk

76.50.+g (Ferromagnetic, antiferromagnetic, and ferrimagnetic resonances; spin-wave resonance) 67.30.hj (Spin dynamics)

Mingming Li(李明明), Lei Zhang(张磊), Lichuan Jin(金立川), and Haizhong Guo(郭海中). Spin transport characteristics modulated by the GeBi interlayer in Y₃Fe₅O₁₂/GeBi/Pt heterostructures[J]. 中国物理B, 2024, 33(2): 27201-027201.

参考文献

[1] Jain A, Rojas-Sanchez J C, Cubukcu M, et al. 2012 Phys. Rev. Lett. 109 106603
[2] Dushenko S, Koike M, Ando Y, Shinjo T, Myronov M and Shiraishi M 2015 Phys. Rev. Lett. 114 196602
[3] Appelbaum I, Huang B and Monsma D 2007 Nature 447 295
[4] Cerqueira C, Qin J Y, Dang H, et al. 2019 Nano Lett. 19 90
[5] Pu Y, Odenthal P M, Adur R, Beardsley J, Swartz A G, Pelekhov D V, Flatté M E, Kawakami R K, Pelz J, Hammel P C and Johnston-Halperin E 2015 Phys. Rev. Lett. 115 246602
[6] Xie H F, Chang Y H, Guo X, Zhang J R, Cui B S, Zuo Y L and Xi L 2023 Chin. Phys. B 32 037502
[7] Lou P C, Katailiha A, Bhardwaj R G, Bhowmick T, Beyermann W P, Lake R K and Kumar S 2020 Phys. Rev. B 101 094435
[8] Ando K and Saitoh E 2012 Nat. Commun. 3 629
[9] Ezhevskii A A, Guseinov D V, Soukhorukov A V, Novikov A V, Yurasov D V and Gusev N S 2020 Phys. Rev. B 101 195202
[10] Kato Y K, Myers R C, Gossard A C and Awschalom D D 2004 Science 306 1910
[11] Niimi Y, Morota M, Wei D H, Deranlot C, Basletic M, Hamzic A, Fert A and Otani Y 2011 Phys. Rev. Lett. 106 126601
[12] Huang Z C, Liu W Q, Liang J, Guo Q J, Zhai Y and Xu Y B 2022 Chin. Phys. B 31 068505
[13] Yuan S P, Shen C, Zheng H Z, Liu Q, Wang L G, Meng K K and Zhao J H 2013 Chin. Phys. B 22 047202
[14] Niimi Y, Kawanishi Y, Wei D H, Deranlot C, Yang H X, Chshiev M, Valet T, Fert A and Otani Y 2012 Phys. Rev. Lett. 109 156602
[15] Yan W, Sagasta E, Ribeiro M, Niimi Y, Hueso L E and Casanova F 2017 Nat. Commun. 8 661
[16] Wang Y, Decker M M, Meier T N G, Chen X, Song C, Grünbaum T, Zhao W, Zhang J, Chen L and Back C H 2020 Nat. Commun. 11 275
[17] Safi T S, Zhang P, Fan Y, Guo Z, Han J, Rosenberg E R, Ross C, Tserkovnyak Y and Liu L 2020 Nat. Commun. 11 476
[18] Mosendz O, Pearson J E, Fradin F Y, Bauer G E W, Bader S D and Hoffmann A 2010 Phys. Rev. Lett. 104 046601
[19] Tserkovnyak Y, Brataas A and Bauer G E W 2002 Phys. Rev. B 66 224403
[20] Rojas-Sánchez J C, Reyren N, Laczkowski P, Savero W, Attané J P, Deranlot C, Jamet M, George J M, Vila L and Jaffrés H 2014 Phys. Rev. Lett. 112 106602
[21] Tserkovnyak Y, Brataas A and Bauer G E W 2002 Phys. Rev. Lett. 88 117601
[22] Kajiwara Y, Harii K, Takahashi S, et al. 2010 Nature 464 262
[23] Montoya E, Omelchenko P, Coutts C, Lee-Hone N R, Hübner R, Broun D, Heinrich B and Girt E 2016 Phys. Rev. B 94 054416
[24] Kalappattil V, Geng R, Das R, et al. 2020 Mater. Horiz. 7 1413
[25] Wang H L, Du C H, Hammel P C and Yang F Y 2014 Appl. Phys. Lett. 104 202405
[26] Wang L, Jing Z X, Zhou A R and Li S D 2022 Chin. Phys. B 31 086201
[27] Jungfleisch M B, Chumak A V, Kehlberger A, Lauer V, Kim D H, Onbasli M C, Ross C A, Kläui M and Hillebrands B 2015 Phys. Rev. B 91 134407
[28] Omelchenko P, Girt E and Heinrich B 2019 Phys. Rev. B 100 144418
[29] Wang H L, Du C H, Pu Y, Adur R, Hammel P C and Yang F Y 2014 Phys. Rev. Lett. 112 197201
[30] Tserkovnyak Y, Brataas A and Bauer G E W 2002 Phys. Rev. Lett. 88 117601
[31] Du C H, Wang H L, Yang F Y and Hammel P C 2014 Phys. Rev. B 90 140407
[32] Li M M, Jin L C, Zhong Z Y, Tang X L, Yang Q H, Zhang L and Zhang H W 2020 Phys. Rev. B 102 174435
[33] Du C H, Wang H L, Pu Y, Meyer T L, Woodward P M, Yang F Y and Hammel P C 2013 Phys. Rev. Lett. 111 247202
[34] Gassenq A, Milord L, Aubin J, Guilloy K, Tardif S, Pauc N, Rothman J, Chelnokov A, Hartmann J M, Reboud V and Calvo V 2016 Appl. Phys. Lett. 109 242107
[35] Wirths S, Geiger R, Driesch N, Mussler G, Stoica T, Mantl S, Ikonic Z, Luysberg M, Chiussi S, Hartmann J M, Sigg H, Faist J, Buca D and Grützmacher D 2015 Nat. Photon. 9 88

Spin transport characteristics modulated by the GeBi interlayer in Y₃Fe₅O₁₂/GeBi/Pt heterostructures

Spin transport characteristics modulated by the GeBi interlayer in Y₃Fe₅O₁₂/GeBi/Pt heterostructures

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Peng Wang(王鹏). Spin pumping by higher-order dipole-exchange spin-wave modes[J]. 中国物理B, 2023, 32(3): 37601-037601.
[2]	Li Wang(王力), Yangtao Su(苏仰涛), Yang Meng(孟洋), Haibin Shi(石海滨), Xinyu Cao(曹昕宇), and Hongwu Zhao(赵宏武). Spin current transmission in Co_1-xTb_x films[J]. 中国物理B, 2022, 31(2): 27504-027504.
[3]	Lijun Ni(倪丽君), Wenqiang Wang(王文强), Lichuan Jin(金立川), Jiandong Ye(叶建东), Hehe Gong(巩贺贺), Xiang Zhan(战翔), Zhendong Chen(陈振东), Longlong Zhang(张龙龙), Xingze Dai(代兴泽), Yao Li(黎遥), Rong Zhang(张荣), Yi Yang(杨燚), Huaiwu Zhang(张怀武), Ronghua Liu(刘荣华), Lina Chen(陈丽娜), and Yongbing Xu(徐永兵). Temperature dependence of spin pumping in YIG/NiO_x/W multilayer[J]. 中国物理B, 2022, 31(12): 128504-128504.
[4]	Li Tian(田丽), Ningxuan Zheng(郑宁宣), Jun Jian(蹇君), Wenliang Liu(刘文良), Jizhou Wu(武寄洲), Yuqing Li(李玉清), Yongming Fu(付永明), Peng Li(李鹏), Vladimir Sovkov, Jie Ma(马杰), Liantuan Xiao(肖连团), and Suotang Jia(贾锁堂). Spin current in a spinor Bose-Einstein condensate induced by a gradient magnetic field[J]. 中国物理B, 2022, 31(11): 110302-110302.
[5]	Peng-Bin Niu(牛鹏斌), Bo-Xiang Cui(崔博翔), and Hong-Gang Luo(罗洪刚). Negative tunnel magnetoresistance in a quantum dot induced by interplay of a Majorana fermion and thermal-driven ferromagnetic leads[J]. 中国物理B, 2021, 30(9): 97401-097401.
[6]	Zhengzhong Zhang(张正中), Min Yu(余敏), Rui Bo(薄锐), Chao Wang(王超), and Hao Liu(刘昊). Pure spin-current diode based on interacting quantum dot tunneling junction[J]. 中国物理B, 2021, 30(11): 117305-117305.
[7]	Ning Wang(王宁), Xingtao An(安兴涛), and Shuhui Lv(吕树慧). Detection of spin current through a quantum dot with Majorana bound states[J]. 中国物理B, 2021, 30(10): 100302-100302.
[8]	郝润润, 臧如雪, 周铁, 康仕寿, 颜世申, 刘国磊, 韩广兵, 于淑云, 梅良模. Magnetization-direction-dependent inverse spin Hall effect observed in IrMn/NiFe/Cu/YIG multilayer structure[J]. 中国物理B, 2019, 28(3): 37202-037202.
[9]	冯晓玉, 张琪涵, 张瀚文, 张祎, 钟瑞, 卢博文, 曹江伟, 范小龙. A review of current research on spin currents and spin-orbit torques[J]. 中国物理B, 2019, 28(10): 107105-107105.
[10]	朱科建, 林伟坚, 苏仰涛, 石海滨, 孟洋, 赵宏武. Inverse spin Hall effect in ITO/YIG exited by spin pumping and spin Seebeck experiments[J]. 中国物理B, 2019, 28(1): 17201-017201.
[11]	John Tombe Jada Marcellino, 王美娟, 汪萨克, 汪军. Spin-current pump in silicene[J]. 中国物理B, 2018, 27(5): 57801-057801.
[12]	郝润润, 钟海, 康韵, 田雨霏, 颜世申, 刘国磊, 韩广兵, 于淑云, 梅良模, 康仕寿. Spin-independent transparency of pure spin current at normal/ferromagnetic metal interface[J]. 中国物理B, 2018, 27(3): 37202-037202.
[13]	王正川. Spin-dependent balance equations in spintronics[J]. 中国物理B, 2018, 27(1): 16701-016701.
[14]	康韵, 钟海, 郝润润, 胡树军, 康仕寿, 刘国磊, 张引, 王向荣, 颜世申, 吴勇, 于淑云, 韩广兵, 姜勇, 梅良模. The origin of spin current in YIG/nonmagnetic metal multilayers at ferromagnetic resonance[J]. 中国物理B, 2017, 26(4): 47202-047202.
[15]	徐卫平, 张玉颖, 王强, 聂一行. Spin-dependent thermoelectric effect and spin battery mechanism in triple quantum dots with Rashba spin-orbital interaction[J]. 中国物理B, 2016, 25(11): 117307-117307.