Pure spin-current diode based on interacting quantum dot tunneling junction

doi:10.1088/1674-1056/abfbd8

中国物理B ›› 2021, Vol. 30 ›› Issue (11): 117305-117305.doi: 10.1088/1674-1056/abfbd8

Pure spin-current diode based on interacting quantum dot tunneling junction

Zhengzhong Zhang(张正中)^1,†, Min Yu(余敏)^2,†, Rui Bo(薄锐)¹, Chao Wang(王超)¹, and Hao Liu(刘昊)^1,‡

1 Faculty of Mathematics and Physics, Huaiyin Institute of Technology, Huaian 223003, China;
2 The Affiliated Drum Tower Hospital of Nanjing University Medical School, Nanjing 210093, China

收稿日期:2021-02-04 修回日期:2021-04-05 接受日期:2021-04-27 出版日期:2021-10-13 发布日期:2021-11-03
通讯作者: Hao Liu E-mail:hyitliuh@163.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 11404322) and the Natural Science Foundation of Huai'an (Grant No. HAB202150).

Pure spin-current diode based on interacting quantum dot tunneling junction

Zhengzhong Zhang(张正中)^1,†, Min Yu(余敏)^2,†, Rui Bo(薄锐)¹, Chao Wang(王超)¹, and Hao Liu(刘昊)^1,‡

1 Faculty of Mathematics and Physics, Huaiyin Institute of Technology, Huaian 223003, China;
2 The Affiliated Drum Tower Hospital of Nanjing University Medical School, Nanjing 210093, China

Received:2021-02-04 Revised:2021-04-05 Accepted:2021-04-27 Online:2021-10-13 Published:2021-11-03
Contact: Hao Liu E-mail:hyitliuh@163.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 11404322) and the Natural Science Foundation of Huai'an (Grant No. HAB202150).

摘要/Abstract

摘要： A magnetic field-controlled spin-current diode is theoretically proposed, which consists of a junction with an interacting quantum dot sandwiched between a pair of nonmagnetic electrodes. By applying a spin bias V_S across the junction, a pure spin current can be obtained in a certain gate voltage regime,regardless of whether the Coulomb repulsion energy exists. More interestingly, if we applied an external magnetic field on the quantum dot, we observed a clear asymmetry in the spectrum of spin current I_S as a function of spin bias, while the charge current always decays to zero in the Coulomb blockade regime. Such asymmetry in the current profile suggests a spin diode-like behavior with respect to the spin bias, while the net charge through the device is almost zero. Different from the traditional charge current diode, this design can change the polarity direction and rectifying ability by adjusting the external magnetic field, which is very convenient. This device scheme can be compatible with current technologies and has potential applications in spintronics or quantum processing.

关键词: pure spin current, semiconductor quantum dot, spin diode

Abstract: A magnetic field-controlled spin-current diode is theoretically proposed, which consists of a junction with an interacting quantum dot sandwiched between a pair of nonmagnetic electrodes. By applying a spin bias V_S across the junction, a pure spin current can be obtained in a certain gate voltage regime,regardless of whether the Coulomb repulsion energy exists. More interestingly, if we applied an external magnetic field on the quantum dot, we observed a clear asymmetry in the spectrum of spin current I_S as a function of spin bias, while the charge current always decays to zero in the Coulomb blockade regime. Such asymmetry in the current profile suggests a spin diode-like behavior with respect to the spin bias, while the net charge through the device is almost zero. Different from the traditional charge current diode, this design can change the polarity direction and rectifying ability by adjusting the external magnetic field, which is very convenient. This device scheme can be compatible with current technologies and has potential applications in spintronics or quantum processing.

Key words: pure spin current, semiconductor quantum dot, spin diode

中图分类号: (Electronic transport in mesoscopic systems)

73.23.-b

85.75.-d (Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields) 73.21.La (Quantum dots) 85.35.-p (Nanoelectronic devices)

Zhengzhong Zhang(张正中), Min Yu(余敏), Rui Bo(薄锐), Chao Wang(王超), and Hao Liu(刘昊). Pure spin-current diode based on interacting quantum dot tunneling junction[J]. 中国物理B, 2021, 30(11): 117305-117305.

Zhengzhong Zhang(张正中), Min Yu(余敏), Rui Bo(薄锐), Chao Wang(王超), and Hao Liu(刘昊). Pure spin-current diode based on interacting quantum dot tunneling junction[J]. Chin. Phys. B, 2021, 30(11): 117305-117305.

参考文献

[1] Žutiá I, Fabian J and Sarma S D 2004 Rev. Mod. Phys. 76 323
[2] Awschalom D D and Flatté M E 2007 Nat. Phys. 3 153
[3] Prinz G A 1998 Science 282 1660
[4] Han W, Kawakami R K, Gmitra M and Fabian J 2014 Nat. Nanotechnol. 9 794
[5] Long W, Sun Q F, Guo H and Wang J 2003 Appl. Phys. Lett. 83 1397
[6] Wang D K, Sun Q F and Guo H 2004 Phys. Rev. B 69 205312
[7] Gong W J, Zheng Y S and Lu T Q 2008 Appl. Phys. Lett. 92 042104
[8] Chi F, Zheng J and Sun L L 2008 Appl. Phys. Lett. 92 172104
[9] Lu H F and Guo Y 2008 Appl. Phys. Lett. 92 062109
[10] Ye C Z, Nie Y H and Liang J Q 2011 Chin. Phys. B 20 127202
[11] Gariglio S 2020 Nature 580 458
[12] Noel P, Trier F, Vicente A L M, Bréhin J, Vaz D C, Garcia V, Fusil S, Barthélémy A Vila L, Bibes M and Attané J P 2020 Nature 580 483
[13] Li J X, Wilson C B, Cheng R, Lohmann M, Kavand M, Yuan W, Aldosary M, Agladze N, Wei P, Sherwin M S and Shi J 2020 Nature 578 70
[14] Kato Y K, Myers R C, Gossard A C and Awschalom D D 2004 Science 306 1910
[15] Seki T, Hasegawa Y, Mitani S, Takahashi S, Imamura H, Maekawa S, Nitta J and Takanashi K 2008 Nat. Mater. 7 125
[16] Uchida K, Takahashi S, Harii K, Ieda J, Koshibae W, Ando K, Maekawa S and Saitoh E 2008 Nature 455 778
[17] Bauer G E W, Saitoh E and Wees B J V 2012 Nat. Mater. 11 391
[18] Lim S, Rajamathi C R, Su S V, Felser C and Kapitulnik A 2018 Phys. Rev. B 98 121301
[19] Chen M J, Lee K, Li J, Cheng L, Wang Q S, Cai K M, Chia E E M, Chang H X and Yang H S 2020 ACS Nano 14 3539
[20] Zhou Y H, Yu S H and Zheng X H 2020 Carbon 170 361
[21] Frolov S M, Venkatesan A, Yu W, Folk J A and Wegscheider W 2009 Phys. Rev. Lett. 102 116802
[22] Frolov S M, Lu scher S, Yu W, Ren Y, Folk J A and Wegscheider W 2009 Nature 458 868
[23] Riordan M, Hoddeson L and Herring C 1999 Rev. Mod. Phys. 71 S336
[24] Kuo W and Chen C D 2002 Phys. Rev. B 65 104427
[25] Souza F M, Egues J C and Jauho A P 2007 Phys. Rev. B 75 165303
[26] Hamaya K, Kitabatake M, Shibata K, Jung M, Ishida S, Taniyama T, Hirakawa K, Arakawa Y and Machida T 2009 Phys. Rev. Lett. 102 236806
[27] Gergs N M, Bender S A, Duine R A and Schuricht D 2018 Phys. Rev. Lett. 120 017701
[28] Zheng J, Chi F and Guo Y 2018 Appl. Phys. Lett. 113 112404
[29] Okumura S, IshizukaH, Kato Y, Ohe J and Motome Y 2019 Appl. Phys. Lett. 115 012401
[30] Sun Q F and Xie X C 2015 Appl. Phys. Lett. 106 182407
[31] Chi F, Dai X N and Sun Lian L 2010 Appl. Phys. Lett. 96 082102
[32] Liu J and Cheng J 2015 Quantum Inf. Process. 14 479
[33] Rejec T, zitko R, Mravlje J and Ramsak A 2012 Phys. Rev. B 85 085117
[34] Chi F and Sun Q F 2010 Phys. Rev. B 81 075310
[35] Zhao H, Zhang X W, Liu X C and Yang Z Q 2020 Phys. Lett. A 384 126607
[36] Peng X K and Zhang Z Z 2019 Chin. Phys. B 28 127202
[37] Dubi Y and Ventra M D 2009 Phys. Rev. B 79 081302(R)
[38] Wiel W G V D, Franceschi S D, Elzerman J M, Fujisawa T, Tarucha S and Kouwenhoven L P 2002 Rev. Mod. Phys. 75 1

Pure spin-current diode based on interacting quantum dot tunneling junction

Pure spin-current diode based on interacting quantum dot tunneling junction

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 10

Metrics

本文评价

推荐阅读 0

[1]	冯晓玉, 张琪涵, 张瀚文, 张祎, 钟瑞, 卢博文, 曹江伟, 范小龙. A review of current research on spin currents and spin-orbit torques[J]. 中国物理B, 2019, 28(10): 107105-107105.
[2]	王柯, 李海欧, 肖明, 曹刚, 郭国平. Spin manipulation in semiconductor quantum dots qubit[J]. 中国物理B, 2018, 27(9): 90308-090308.
[3]	张鑫, 李海欧, 王柯, 曹刚, 肖明, 郭国平. Qubits based on semiconductor quantum dots[J]. 中国物理B, 2018, 27(2): 20305-020305.
[4]	熊永臣, 朱占武, 贺泽东. Phase transition and charge transport through a triple dot device beyond the Kondo regime[J]. 中国物理B, 2018, 27(10): 108503-108503.
[5]	徐卫平, 张玉颖, 王强, 聂一行. Spin-dependent thermoelectric effect and spin battery mechanism in triple quantum dots with Rashba spin-orbital interaction[J]. 中国物理B, 2016, 25(11): 117307-117307.
[6]	佘彦超, 罗婷婷, 张蔚曦, 冉茂武, 王登龙. Steady-state linear optical properties and Kerr nonlinear optical response of a four-level quantum dot with phonon-assisted transition[J]. 中国物理B, 2016, 25(1): 14202-014202.
[7]	邓伟胤, 盛利, 邢定钰. Spin pumping through magnetic impurity effect[J]. 中国物理B, 2015, 24(8): 87202-087202.
[8]	叶成芝, 聂一行, 梁九卿. A pure spin-current injector of semiconductor quantum dots with Andreev reflection and Rashba spin–orbit coupling[J]. 中国物理B, 2011, 20(12): 127202-127202.
[9]	刘正奇, 冯天华, 戴峭峰, 吴立军, 兰胜, 丁才蓉, 汪河洲, Gopal Achanta Venu. Modification of the spontaneous emission of quantum dots near the surface of a three-dimensional colloidal photonic crystal[J]. 中国物理B, 2010, 19(11): 114210-114301.
[10]	马红, 马国宏, 王文军, 高学喜, 马洪良. Size-dependent optical properties and carriers dynamics in CdSe/ZnS quantum dots[J]. 中国物理B, 2008, 17(4): 1280-1285.